Professional Documents
Culture Documents
Surface Raman spectroscopy in ultrahigh vacuum is used to interrogate interfaces formed between tris(8-
hydroxyquinoline) aluminum (Alq3) and vapor-deposited Ca. Vapor deposition of Ca onto Alq3 films results
in the appearance of new vibrational modes consistent with the formation of a Ca-Alq3 adduct in which Ca
is bound through the O of Alq3. In addition, the graphitic carbon is observed to form with the deposition of
Ca onto Alq3 films. The frequency and relative peak height ratios of graphitic D-band and G-band observed
are consistent with more disordered sp3-type carbon forming upon partial decomposition of the organic film.
Experimental Section
Ultrahigh Vacuum Chamber. Organic and metallic thin
films were prepared and characterized in a custom-built ultrahigh
vacuum (UHV) chamber.14,15,30 Thin films were deposited in a
sample preparation chamber separated by a 6 in. gate valve and
analysis chamber. A 300 L s-1 turbomolecular pump, an ion
pump, and two titanium sublimation pumps maintain a base
pressure of 2 × 10-10 torr in the analysis chamber; working
pressures were seldom above 10-9 torr. The ion and titanium Figure 1. Peak fitting of Raman spectra of 150 Å Alq3 films after Ca
sublimation pumps are liquid nitrogen-cooled to remove con- deposition of (a) 0, (b) 5, (c) 10, (d) 15, and (e) 20 Å mass thickness. Raw
densable gases (primarily H2O). Raman spectrum (black solid lines), overall fit envelope (black dashed
Chemically polished Ag substrates were mounted on a 1.5 m lines), Alq3 modes (red dashed lines), Ca-Alq3 reaction product modes
Advanced Research Systems DE-204B closed-cycle He-cooled (green dashed lines), and graphitic carbon modes (blue dashed lines).
cryogenic translatable arm that could be cooled to a base
operating temperature of 30 K. This arm can be translated
respect to the surface normal. Collected radiation was collimated
between the sample preparation and analysis chambers at
and focused onto the front entrance slit of a single monochro-
temperature. Temperature was controlled in these studies using
mator (Spex 270M) with a 1200 gr/mm grating and set for a 5
a Cryo-Con Model 34 cryogenic temperature controller using
cm-1 spectral bandpass. A holographic SuperNotch Plus filter
a type K, Chromel-AuFe thermocouple at the bottom of the
(Kaiser Optical Systems) was used to reduce Rayleigh scattering.
coldfinger within close proximity of the stub.
A 1340 × 400 pixel, thinned, back-illuminated CCD (Roper
Materials. 8-Hydroxyquinoline, aluminum salt (99.995%),
Scientific model 400-EB) held at -95 °C was used for detection.
was obtained from Aldrich and was degassed at 250 °C at 10-9
Typical integration times varied from 10 to 30 min per
torr for 6 h prior to deposition. Calcium crystalline dendritic
acquisition. Spectra were calibrated using Ar+ emission lines.
pieces (99.98%) were obtained from Alpha Aesar and degassed
Peak fitting of Raman spectra was accomplished with Grams/
at 400 K at ∼1 × 10-9 torr for 1 h prior to remove any metal
32 using 100% Gaussian peaks. Peaks at frequencies associated
oxide. A 1.25 cm diameter Ag (111) disk (99.999%, Alfa Aesar)
with intense Alq3 modes were fit using peak frequencies ((5
was used as the underlying substrate for all experiments.
cm-1) and relative intensities ((10%) determined by Halls and
Procedures. The procedure for obtaining chemically polished
Aroca33 with full-width-at-half-maximum (fwhm) values of 15
Ag surfaces has been outlined previously.31,32 Alq3 films were
cm-1 ((10 cm-1). Modes associated with graphitic carbon were
prepared on Ag substrates held at 300 K, similar to the
fit using five broad bands using peak frequencies ((10 cm-1),
conditions used in the fabrication of OLED devices, and are
relative intensities ((50%), and fwhm ((50%) described by
spectroscopically consistent with the formation of amorphous
Ferrari and Robertson.36 All additional spectral features were
or R-Alq3.33-35 Ca was deposited after degassing onto the
fit with broad bands that were allowed to vary in frequency by
Alq3-Ag sample held at ∼60 K from Al2O3-coated W/Ta
(10 cm-1, in fwhm by (10 cm-1, and intensity by (50%.
crucibles to ensure a sticking coefficient of 1 for the deposited
metals and to prevent the desorption of any volatile reaction
Results and Discussion
products. Film deposition was monitored differentially using a
multifilm deposition monitor (Maxtek TM-400) and a gold- Ca has a low atomic ionization potential that supports electron
coated quartz sensor crystal (Maxtek SC-101). The sensor was transfer to the conjugated 8-HQ ring of Alq3, and UPS/XPS
held at room temperature for Alq3 deposition but cooled with measurements have demonstrated a strong Ca interaction with
liquid N2 during metal deposition; reported values of coverage the organic layer.3,4 Figure 1 shows Raman spectra at 90 K of
represent mass thicknesses of the metal assuming bulk density. a pristine 150 Å Alq3 film on Ag before and after deposition of
Raman spectra were acquired by moving the sample stub into Ca layers ranging in mass thickness from 5 to 20 Å. With the
the glass cell at the end of the analysis chamber. Radiation of deposition of 5 Å Ca in Figure 1b, the Alq3 modes at 1595,
514.5 nm with 20 mW power at the sample was provided by a 1394, 543, 525, and 504 cm-1 exhibit a 30-40% intensity
Coherent Innova 350C Ar+ laser. Light was incident on the decrease compared to those from the pristine Alq3 thin film.
sample at 60°, and scattered photons were collected at 30° with Broad modes also appear for 5 Å Ca on Alq3 from 1100 to
Surface Raman Spectroscopy J. Phys. Chem. A, Vol. 113, No. 16, 2009 4399
energy level between the bulk Alq3 film and the metal Fermi
level, as observed by the formation of a gap state in UPS
examination of the interface.5 Such an interfacial state may act
as an intermediate hopping state between the metal and Alq3,
thus lowering the thermal energy required for injection.39 The
presence of Ca-Alq3 complexes as well as decomposition
products also likely creates disorder within the Alq3 film at the
interface, further broadening the interfacial region and the energy
distribution of interfacial states. This broadening may also lower
the effective thermal energy required for electron injection.
Lastly, the presence of decomposition products at the Ca/
Alq3 interface may further broaden the energy distribution of
the interfacial states toward lower energies. Notably, the
graphitic carbon formed at Ca/Alq3 has a higher sp3 character
than that observed at either Al/Alq3 or Mg/Alq3. This more
disordered carbon contains a higher degree of defect sites which
may serve as traps for injected electrons, lowering the efficiency
of charge transfer across the interface. Conversely, the presence
of additional lower energy states from the disordered graphitic
Figure 4. Proposed structure for Ca inserted into R-crystal phase of
mer-Alq3. C, N, O, and Al atoms of Alq3 shown in gray, blue, red, and carbon may aid in electron injection by serving as hopping sites
green, respectively; vapor-deposited Ca atom shown in yellow. between the metal and Alq3 levels. The electroluminescent
efficiencies reported by Stossel et al.25 for the Ca/Alq3 interface
suggest that the former behavior may dominate in these systems,
the reaction with Alq3 and creating a narrower metal-organic
or in other words, the high number of defect sites in the graphitic
interfacial region than may be formed in real devices produced
carbon trap injected electrons. Despite similar electron affinities
at room temperature.
for Mg and Ca, Raman spectra of these metal-organic interfaces
Conclusions clearly show that the structures of both the metal-Alq3 adducts
and the graphitic carbon formed in these systems are substan-
Raman spectra for Alq3 films exhibit significant spectral tially different.
changes after deposition of 5-20 Å Ca. The loss in intensity
of all major Alq3 modes coupled with the appearance of new Acknowledgment. The authors gratefully acknowledge sup-
modes supports the partial reactive conversion of Alq3 to a new port of this research by the National Science Foundation.
product in which Ca is bound to Alq3 through the O atom of
8-HQ as evidenced by the appearance of a new ν(Ca-O) mode
References and Notes
at 618 cm-1. The shifts in νring and ν(C-O) further support
interaction of the deposited Ca with an O atom of Alq3 and a (1) Tang, C. W.; Vanslyke, S. A. Appl. Phys. Lett. 1987, 51, 913.
subsequent shift in electron density in the π-system of the ligand. (2) Tang, C. W.; Van Slyke, S. A.; Chen, C. H. J. Appl. Phys. 1989,
65, 3616.
The relative intensities of the Ca-Alq3 product modes observed (3) Park, Y.; Choong, V. E.; Hsiesh, B. R.; Tang, C. W.; Wehrmeister,
here are significantly lower than those reported previously for T.; Mullen, K.; Gao, Y. J. Vac. Sci. Technol., A 1997, 15, 2574.
both the Al-Alq3 and Mg-Alq3 products, indicating, as (4) Choong, V. E.; Mason, M. G.; Tang, C. W.; Gao, Y. Appl. Phys.
proposed by Curioni and Andreoni, that the Ca-Alq3 complex Lett. 1998, 72, 2689.
(5) Rajagopal, A.; Kahn, A. J. Appl. Phys. 1998, 84, 355.
may be significantly less stable than the other metal-Alq3 (6) Le, Q. T.; Yan, L.; Choong, V.-E.; Forsythe, E. W.; Mason, M. G.;
complexes.16 Tang, C. W.; Gao, Y. Synth. Met. 1999, 102, 1014.
The appearance and growth of graphitic carbon modes at (7) Le, Q. T.; Yan, L.; Gao, Y.; Mason, M. G.; Giesen, D. J.; Tang,
C. W. J. Appl. Phys. 2000, 87, 375.
1515, 1435, 1315, 1200, and 573 cm-1 indicate degradation of (8) Shen, C.; Hill, I. G.; Kahn, A.; Schwartz, J. J. Am. Chem. Soc.
Alq3 to graphitic carbon after the deposition of Ca. The 2000, 122, 5391.
frequencies and relative intensity ratio of the D-band and G-band (9) Shen, C.; Kahn, A.; Schwartz, J. J. Appl. Phy. 2001, 89, 449.
modes of graphitic carbon indicate that highly disordered (10) Yan, L.; Mason, M. G.; Tang, C. W.; Gao, Y. L. Appl. Surf. Sci.
2001, 175, 412.
graphite with a large sp3 character is formed as a result of partial (11) Sakurai, Y.; Salvan, G.; Hosoi, Y.; Ishii, H.; Ouchi, Y.; Seki, K.;
decomposition of the organic film.36 This graphitic carbon is Kampen, T. U.; Zahn, D. R. T. Appl. Surf. Sci. 2002, 190, 382.
considerably more disordered and contains more sp3 character (12) Sakurai, Y.; Hosoi, Y.; Ishii, H.; Ouchi, Y.; Salvan, G.; Kobitski,
than the graphitic carbon previously reported for both Mg-Alq3 A.; Kampen, T. U.; Zahn, D. R. T.; Seki, K. J. Appl. Phys. 2004, 96, 5534.
(13) Sakurai, Y.; Yokoyama, T.; Hosoi, Y.; Ishii, H.; Ouchi, Y.; Salvan,
and Al-Alq3, illustrating that important chemical differences G.; Kobitski, A.; Kampen, T. U.; Zahn, D. R. T.; Seki, K. Synth. Met. 2005,
are present at the reactive interfaces of these seemingly similar 154, 161.
metals with Alq3. (14) Davis, R. J.; Pemberton, J. E. J. Phys. Chem. C 2008, 112, 4364.
(15) Davis, R. J.; Pemberton, J. E. J. Am. Chem. Soc., submitted.
The presence of even a small amount of graphitic carbon at (16) Curioni, A.; Andreoni, W. J. Am. Chem. Soc. 1999, 121, 8216.
the Ca-Alq3 interface has profound implications for interfacial (17) Zhang, R. Q.; Lu, W. C.; Lee, C. S.; Hung, L. S.; Lee, S. T. J. Chem.
electronic structure and conductivity in functioning electronic Phys. 2002, 116, 8827.
devices. The graphitization reaction reported in this study at (18) Meloni, S.; Palma, A.; Schwartz, J.; Kahn, A.; Car, R. J. Am. Chem.
Soc. 2003, 125, 7808.
90 K is expected to be retained at room temperature, com- (19) Meloni, S.; Palma, A.; Kahn, A.; Schwartz, J.; Car, R. J. Appl.
mensurate with the conditions used for device fabrication, Phys. 2005, 98, 23707.
although diffusion may limit the extent of the reaction and (20) Takeuchi, K.; Yanagisawa, S.; Morikawa, Y. Sci. Technol. AdV.
breadth of the interfacial region at 90 K. The formation of a Mater. 2007, 8, 191.
(21) Blom, P. W. M.; deJong, M. J. M.; Vleggaar, J. J. M. Appl. Phys.
Ca-Alq3 complex at the interface may also have several effects Lett. 1996, 68, 3308.
on charge injection. The Ca-Alq3 complex likely lies at an (22) Parker, I. D. J. Appl. Phys. 1994, 75, 1656.
4402 J. Phys. Chem. A, Vol. 113, No. 16, 2009 Davis and Pemberton
(23) Brown, T. M.; Friend, R. H.; Millard, I. S.; Lacey, D. J.; (31) Smolinski, S.; Zelenay, P.; Sobkowski, J. J. Electroanal. Chem.
Burroughes, J. H.; Cacialli, F. Appl. Phys. Lett. 2001, 79, 174. 1998, 442, 41.
(24) Burrows, P. W.; Forrest, S. R. Appl. Phys. Lett. 1994, 64, 2285. (32) Tiani, D. J.; Pemberton, J. E. Langmuir 2003, 19, 6422.
(25) Stossel, M.; Staudigel, J.; Steuber, F.; Simmerer, J.; Winnacker, (33) Halls, M. D.; Aroca, R. Can. J. Chem. 1998, 76, 1730.
A. Appl. Phys. A: Mater. Sci. Process. 1999, 68, 387. (34) Brinkmann, M.; Gadret, G.; Muccini, M.; Taliani, C.; Masciocchi,
N.; Sironi, A. J. Am. Chem. Soc. 2000, 122, 5147.
(26) Schlaf, R.; Parkinson, B. A.; Lee, P. A.; Nebesny, K. W.;
(35) Curry, R. J.; Gillin, W. P.; Clarkson, J.; Batchelder, D. N. J. Appl.
Armstrong, N. R. Appl. Phys. Lett. 1998, 73, 1026.
Phys. 2002, 92, 1902.
(27) CRC Handbook of Chemistry and Physics, 64th ed.; Weast, R. C., (36) Ferrari, A. C.; Robertson, J. Phys. ReV. B 2000, 61, 14095.
Ed.; CRC Press: Boca Raton, FL, 1984. (37) Tamor, M. A.; Vassell, W. C. J. Appl. Phys. 1994, 76, 3823.
(28) Shen, C. F.; Hill, I. G.; Kahn, A. AdV. Mater. 1999, 11, 1523. (38) Watanabe, H.; Takahashi, K.; Iwaki, M. Nucl. Instrum. Methods
(29) Broms, P.; Birgerson, J.; Salaneck, W. R. Synth. Met. 1997, 88, Phys. Res., Sect. B 2007, 257, 549.
255. (39) Baldo, M. A.; Forrest, S. R. Phys. ReV. B 2001, 64, 85201.
(30) Hawkridge, A. M.; Pemberton, J. E. J. Am. Chem. Soc. 2003, 125,
624. JP8110698