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Abstract—LLC resonant converter is one of the most suitable Vout , Vout m in , DC output voltage and its maximum and
circuit topologies that have been introduced for designing con- and Vout m ax minimum values.
stant output voltage switched-mode power supplies. In this pa- Vout N , Vout m in N , Normalized dc output voltage and its max-
per, a design procedure is introduced for using this converter as a
wide output range voltage source. Unlike constant output voltage and Vout m ax N imum and minimum values.
applications which need small converter inductance ratio and nar- VoutFL and VoutNL DC output voltage under the maximum
row switching frequency variations, for wide output range applica- output current and no-load conditions.
tions, large values of these parameters are needed simultaneously VC r , Vr out Resonant capacitor voltage and output
and should be optimized. Instead of minimizing the components ripple.
stresses, leading to a great value of the inductance ratio, proper
choice of the converter parameters resulting in a smaller induc- VC r m ax , VC r m ax N Resonant capacitor maximum voltage and
tance ratio has been done. Maximum value of the capacitor in par- its normalized value.
allel with the power MOSFETs drain-sources has been derived to VDSM and VCAD Power MOSFET drain-source and power
realize the zero voltage switching operation in the converter induc- diode cathode–anode voltages.
tive region. Soft switching is achieved for all power devices under all VARR Output voltage adjustable range ratio.
operating conditions. A prototype of the converter has been tested
for different regulated output voltages (35–165 Vd c ) under differ- Pout and Pout m ax Output power and its maximum value.
ent loads (0–3 Ad c ) and input voltages (320–370 Vd c ) for using an Q and Qm ax L Quality factor and its value for maximum
ion implanter arc power supply, with maximum efficiency value of output current and voltage.
94.7%. Experimental results confirm the high performance of the fr , fs , fs m in , Resonant frequency, switching frequency,
wide output range LLC resonant converter even under the worst and fs m ax and its minimum and maximum values (in
case conditions.
hertz).
Index Terms—LLC resonant converter, switched-mode power fn , fn m in , Normalized switching frequency and its
supply (SMPS), wide output range, zero current switching (ZCS), and fn m ax minimum and maximum values (dimen-
zero voltage switching (ZVS).
sionless), respectively.
Zin , Zin 0 , Zin∞ , Input impedance, its values at short-circuit
NOMENCLATURE and Zin N and no-load conditions, and its normal-
ized value.
a, n Converter inductance ratio and trans-
ID p eak and I1 Output rectifier stage peak current and
former turns ratio.
the converter resonant input current first
Iin N and Iin m ax N Normalized ac input current and its max-
harmonic.
imum value.
Pcon. and Pcon. m ax Conduction loss and its maximum value.
Iout and Iout m ax Output dc current and its maximum value.
Pcon.N Normalized conduction loss and its max-
IDSM 1 and ID MOSFET drain-source and diode cur-
and Pcon. m ax N imum value.
rents.
ΔT and λ Converter dead time and the rectifier stage
kz Converter’s input impedance ratio.
conduction angle.
Vin , Vin m in , DC input voltage and its maximum and
ψ1 Phase shift of the converter resonant input
and Vin m ax minimum values.
current first harmonic as compared to the
Vin N , Vin m in N , Normalized dc input voltage and its max-
power MOSFETs drain-sources square-
and Vin m ax N imum and minimum values.
wave voltage.
RL , Lr , Lm , Cr , Output load resistance, resonant in-
Manuscript received October 3, 2011; revised November 14, 2011; accepted and Cout ductance, magnetizing inductance, reso-
January 31, 2012. Date of current version April 20, 2012. Recommended for nant capacitance, and output capacitance,
publication by Associate Editor K.-H. Chen. respectively.
The authors are with the School of Electrical Engineering, Sharif University
of Technology, Tehran 11365-8639, Iran (e-mail: r.beiranvand@yahoo.com; ESRC o u t Output capacitor’s equivalent series resis-
rashidia@sharif.edu; zolghadr@sharif.edu; mhalavi@sharif.edu). tance.
Color versions of one or more of the figures in this paper are available online Cp Effective capacitance appeared in parallel
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TPEL.2012.2187801 with the power MOSFETs drain-sources.
Fig. 1. LLC resonant converter. (a) Circuit topology. (b) AC equivalent circuit
based on the FHA approach.
Fig. 6. LLC resonant converter simplified circuit under the no-load condition.
0 fn m ax ≥ 1/m
By accounting the output-voltage higher order harmonics, more
ψm = h (jmωs m ax ) = (15)
accurate calculations can be derived. Ignoring the dead-time π fn m ax < 1/m.
intervals for simplicity, this switch network generates a sym- If fn m ax ≥ 1, then from (13), (14), and (15), the normalized
metrical square-wave output voltage which can be expressed in output voltage of the converter is obtained
the normalized form in the Fourier series as follows: 2Vin m ax N m
Vin m ax N 2Vin m ax N voN (t) = 2 − f −2
sin (mωs m ax t).
vsN (t) = + sin (mωs t) . m =1,3,5,...
n (1 + a) π m n m ax
2 mπ
m =1,3,5,... (16)
(10) This normalized voltage has been plotted in Fig. 7. In
Appendix V, equations for fn m ax < 1 have also been de-
The dead-time value is usually chosen much smaller than rived. The minimum value of the normalized dc output voltage
the minimum switching period. In other words, ΔT Ts m in is Vout m in N is equal to the amplitude of voN (t). Considering (16)
always satisfied, practically. So, it can be concluded intuitively and Fig. 7, we can calculate Vout m in N as follows:
that ignoring this time interval does not introduce significant ∞
error in the derived expressions. From Fig. 6, under the no-load 2Vin m ax N (2m − 1) (−1)m −1
Vout m in N = . (17)
condition, the voltage gain of the converter is derived as follows: nπ (1 + a) m =1 (2m − 1)2 − fn−2
m ax
Fig. 11. Typical LLC resonant converter waveforms, power MOSFET drain–
source voltage, resonant capacitor voltage, and resonant inductor current.
sary dead time for achieving the ZVS operation even under the
worst case condition can be found, as reported in [17], [24],
and [25]. Based on these analyses, maximum value of Cp is
obtained
2ΔT Cr 1 + π 2 8 − 1 1 − afn−2m ax (1 + a)
Cp = .
π Lr fn m ax (1 + a−1 − fn−2m ax )
(33)
The selected dead time affects the efficiency of the converter,
because the energy is not transferred from the primary side to
the output load during this time interval, effectively, as can be
concluded from [26]. Thus, the effective duty cycle for energy
transferring is smaller for the longer dead times and higher input
resonant currents are required to deliver the same output power
as compared to the smaller dead-time values. So, the primary-
and secondary-side conduction losses, turn-off switching losses,
inductor and transformer losses are increased which reduce the
converter efficiency under the full-load conditions. On the other
hand, the ZVS operation is lost for smaller dead-time values
under the light-load condition, leading to lower efficiency. Thus,
the optimum value of the dead time can be chosen based on
the efficiency considerations and specifications of the devices.
Then, the maximum value of Cp is obtained from (33). The ZVS
operation is lost above this value.
Reducing the amplitude of the input resonant current as low as
possible to minimize the converter conduction losses is another
important topic that must be satisfied for increasing the LLC
resonant converter light-load performance. For a given value
Fig. 13. (a) V A R R and V C r m a x N versus Q m a x L and a. (b) V A R R versus of the full-load impedance to obtain good efficiency at light
small values of Q m a x L and a (fn m in = 0.85, fn m a x = 2.5).
loads, we should have |Zin∞ (jωs m ax )| |Zin 0 (jωs m in )|. In
other words, from (17A) and (18A), we must have
Fig. 15. Simulated waveforms of the LLC resonant converter under the full-
load condition (i.e., V o u t m a x , Io u t m a x ) to evaluate the specifications of C o u t .
165 V. From [23], for Iout m ax = 3 A and the other obtained pa-
rameters, λ = 2.2. Thus, the output rectifier peak current is 6.7
A.) In practice, the margins of the device specifications must
be chosen, properly. Based on the FHA approach, the power
MOSFET’s conduction losses under the maximum output cur-
rent condition for different output voltage can be calculated by
using (27). The resonant inductor and the transformer primary
winding losses can be calculated by considering (26) for dif-
ferent output voltages. From (39), the transformer secondary
winding losses and the output rectifying stage diodes’ conduc-
tion losses can be calculated. For Iout = Iout m ax , these losses
depend on the output voltage variations through λ, as shown in
(39).
Step 9: Considering (39) and Figs. 1 and 15, capacitance of
the output capacitor can be identified as follows:
1 − λ/π
Cout ≥ . (40)
fs m in 4V r o u t
Io u t m a x − ESRC out π2
λ − 2
TABLE I
KEY PARAMETERS OF THE DESIGNED PROTOTYPE CONVERTER
Fig. 20. Load-step responses of the designed converter at two different con-
ditions, time/division =50 μs. (a) V o u t = 165 V d c , V in = 320 V. (Top)
V o u t , 2V/div. (Bottom) Io u t , 1 A/div. (b) V o u t = 35 V d c , V in = 360 V. Fig. 21. Efficiency of the wide output range LLC resonant converter versus
(Top) V o u t , 0.5 V/div. (Bottom) Io u t , 1 A/div. output current for maximum and minimum values of the output voltage (the
LLC resonant converter input voltage modulated by twice of the line frequency,
its variations depend on its output load, due to the poor load regulation of the
TABLE II PFC stage. These variations are limited between 320 and 370 V).
COMPARING THE PROTOTYPE CONVERTER CALCULATED AND
EXPERIMENTAL RESULTS
⎧ l−1
∞
⎪
⎪
⎪ 2Vin m ax N (2m − 1) (−1)m (2m − 1) (−1)m −1 1
⎪
⎪ + , ≤ fn m ax < 1
⎨ nπ (1 + a) 2 −2 2 −2
m =1 (2m − 1) − fn m ax (2m − 1) − fn m ax l
m =l
Vout m in N = (23A)
⎪ ∞
⎪
⎪
⎪ 2Vin m ax N (2m − 1) (−1)m −1
⎪
⎩ nπ (1 + a) 2 , fn m ax ≥ 1.
−2
m =1 (2m − 1) − fn m ax
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[27] Intusoft. (2003, Jun.). “Magnetics design and applications,” in Personal Mohammad Reza Zolghadri (M’05) received the
Computer Circuit Design Tools: Magnetics Designer [Online]. ch. 4, B.Sc. and M.Sc. degrees from the Sharif University of
pp. 127–162. Available: http://www.intusoft.com/lit/MagDesRev01.pdf Technology, Tehran, Iran, in 1989 and 1992, respec-
[28] H. Sheng, W. Shen, H. Wang, D. Fu, Y. Pei, X. Yang, F. Wang, D. Boroye- tively, and the Ph.D. degree from the Institute Na-
vich, F. C. Lee, and C. W. Tipton, “Design and implementation of tional Polytechnique de Grenoble, Grenoble, France,
high power density three-level parallel resonant converter for capacitor in 1997, all in electrical engineering.
charger,” in Proc. 22nd Annu. IEEE. Appl. Power Electron. Conf., 2007, Since 1997, he has been with the College of Elec-
pp. 745–749. trical Engineering, Sharif University of Technology.
[29] S. Zheng and D. Czarkowski, “Modeling and digital control of a phase- From 2000 to 2003, he was a Senior Researcher in
controlled series–parallel resonant converter,” IEEE Trans. Ind. Electron., the Electronics Laboratory, SAM Electronics Com-
vol. 54, no. 2, pp. 707–715, Apr. 2007. pany, Tehran. From 2003 to 2005, he was a Visiting
[30] S. Lineykin and S. Ben-Yaakov, “Unified SPICE compatible model for Professor at North Carolina, A&T State University, Greensboro. His current
large and small-signal envelope simulation of linear circuits excited by research interests include application of power electronics in renewable energy
modulated signals,” IEEE Trans. Ind. Electron., vol. 53, no. 3, pp. 745– systems and hybrid electric vehicle, variable speed drives, and modeling and
751, Jun. 2006. control of power electronic converters.
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resonant converter with adaptive link-voltage variation for a high-power-
density adapter,” IEEE Trans. Power Electron., vol. 25, no. 9, pp. 2248–
2252, Sep. 2010.
Seyed Mohammad Hossein Alavi received the
M.Sc. degree from the Karlsruhe University of Tech-
nology, Karlsruhe, Germany, in 1974, and the Ph.D.
degree in electrical engineering from the Stuttgart
University of Technology, Stuttgart, Germany, in
1993.
Reza Beiranvand (M’08) received the M.Sc. and Since 1993, he has been with the College of Elec-
Ph.D. degrees in electrical engineering from the trical Engineering, Sharif University of Technology,
Sharif University of Technology, Tehran, Iran, in Tehran, Iran, where he is currently an Associate Pro-
1999 and 2010, respectively. fessor. He was a member of the technical staff at
From 1999 to 2007, he was a Senior Engineer at Siemens Instrumentations Laboratory, Wagner Com-
the R&D Centers of Parselectric and Shahab MFGs, puter Industry, WSWTrans. Fabrik, and Adler SMPS-Manufacturing for several
Tehran, where he was involved in the design of years, all in Germany. His current research interests include switching power
CRT, liquid crystal display, and LED TVs based on supplies and general electronic systems.
Micronas, Philips Semiconductors (now Next eXPe- Dr. Alavi was the recipient of the 1998 Distinguished Faculty Award.
rience (NXP) Semiconductors), and ST components,
and also on high power factor resonant converters for
ballast applications. He is currently a Postdoctoral Research Fellow with the
College of Electrical Engineering, Sharif University of Technology. His current
research interests include topologies and control circuits of the resonant con-
verters, soft switching, and photovoltaic-based renewable energy systems.