Accurate Modeling and Design of LLC Resonant
Converter with Planar Transformers
Navid Shafiei, Martin Ordonez,
and Samuel Robert Cove
Electrical and Computer Engineering
The University of British Columbia
Vancouver, BC V6T1Z4 Canada
Email: navid@ece.ubc.ca, mordonez@ieee.org,
srcove@ieee.org
Abstract— In order to design and fabricate low profile (slim)
LLC resonant converters, it is essential to replace conventional
wire-wound magnetic transformers with low profile planar
ones. In planar transformers, to decrease high-frequency AC
resistance and to get high power efficiency, the primary and
secondary PCBs are stacked together using the interleave
structure method, which leads to a high amount of inter-winding
and intra-winding capacitances. These winding capacitances
can change the behavior of the LLC resonant converter and
disturb the soft transition of the power MOSFETs, because the
resonant circuit current should charge and discharge not only
the effective Drain-Source capacitances of the power MOSFETs,
but also the planar transformer winding capacitance. In this
paper, the steady state equations of the LLC resonant converter
with the planar transformer are extracted. In order to fully
consider the characteristics of the LLC resonant converter,
a new set of analytical equations is obtained for the LLC
resonant converter, with consideration of the planar transformer
equivalent capacitance. The experimental results extracted from
a 36VDC, 200W prototype platform verify the accuracy of the
analytical equations obtained, and demonstrate the validity of
the employed model.
I. I NTRODUCTION
In recent years, continuous research studies have been
dedicated to the LLC resonant converter topology because
of its numerous advantages such as soft switching, high
efficiency, superior output regulation over a wide load range,
and reduced electromagnetic interference [1–3]. In the LLC
resonant converter, the core and bobbin heights of conven-
tional wire-wound transformers are the main restriction on
increasing power density, especially in the design of slim
power converters. Compared to conventional transformers,
planar transformers have a lower profile structure with ex-
cellent heat dissipation characteristics and reduced weight.
Also, planar magnetics fabrication and assembly processes
have several advantages over conventional magnetics, such
as the capability for automation, mass production, and the
possibility of parasitic elements prediction, because their
primary and secondary windings are on Printed Circuit Board
(PCB) layers [4, 5]. Therefore, using planar transformers in
LLC resonant converters is an excellent choice in order
to reduce size, especially height, thereby increasing power
978-1-4673-7151-3/15/$31.00 ©2015 IEEE 5468
Marian Craciun and Chris Botting
Delta-Q Technologies Corporation,
Burnaby, BC, Canada
Email: mcraciun@delta-q.com,
cbotting@delta-q.com
density. Among planar structures methods, the interleaving
windings structure is widely accepted because of lower Mag-
neto Motive Force (MMF) between primary and secondary
layers, which leads to lower high frequency AC resistance
and higher efficiency [6, 7]. In this structure, due to the
narrow spaces between different layers, basically provided
by PCB material or Kapton tape, there are high density
electrostatic fields between different layers, which create a
large amount of inter- and intra-winding capacitances inside
the planar transformer compared to the conventional wire
wound counterpart. This means the resonant circuit current
should not only charge and discharge the MOSFETs Drain-
Source capacitances during the inverter dead-time interval,
but also charge and discharge the planar transformer parasitic
capacitances. These parasitic capacitances can significantly
change the behaviour of the resonant converter, especially
at high switching frequency. As a result, the steady state
equations of the LLC resonant converter are not accurate
enough for designing the resonant converter with planar
transformer, and these parasitic capacitances needs to be
taken into consideration during the design procedure. In [8],
the impact of the planar transformer winding capacitances
on Si-based and Ga-N based LLC resonant converters has
been studied. In the aforementioned paper, it was concluded
the Ga-N based resonant converter is more compatible with
the planar transformer, due to the lower Drain-Source capac-
itance of Ga-N devices.
This paper proposes a fourth order model for the conven-
tional LLC resonant converter that would be able to fully
investigate the characteristics of the LLC resonant converter
with planar transformer. This model takes into account the
effect of the planar transformer winding capacitances as an
equivalent capacitance, which is put in parallel with the mag-
netizing inductance. A detailed analysis is presented to study
the behaviour of the converter in steady state conditions.
The experimental results prove that the proposed new model
for the LLC resonant converter can predict the behaviour
of the converter and can be employed in the LLC resonant
converter design with planar transformers.
 1
S1 Cs D1 D3 Io′
2 Cpso
Ls ′
isec Vo′
1:n
Vin
2 iLS Lp Cpo Cso′ ′ Cf′ R′L
vsec

S2 Cs Planar Transformer Equivalent D

2 D4
Circuit
vs2 2

Fig. 1. LLC resonant converter with the planar transformer. 

1 indicates transformer winding capacitances which should be charged and discharged by
resonant circuit current. 
2 indicates MOSFETs Drain-Source effective capacitances that should be discharged completely during dead time intervals.

II. LLC R ESONANT C ONVERTER WITH P LANAR defined as follows [9]:

T RANSFORMER
In order to analyze the conventional LLC resonant con- 1 sin2 ψ
Zeq = Req + , Req =
verter with wire wound transformer, the transformer is usu- jωs Ceq πCtr ωs
(2)
ally replaced by a second or third order equivalent circuit, πCtr π − 2ωs RL Ctr
Ceq = , ψ = cos−1 ( )
which consists of magnetizing inductance and leakage in- ψ − sin ψ cos ψ π + 2ωs RL Ctr
ductances on the primary and the secondary side [9]. In
Note that in all equations, the variables and elements are
interleaved planar transformers, the primary and secondary
transferred to the primary side of the transformer (without
PCBs are stacked together using the interleave structure
an apostrophe). The ψ in the recent equation is called non-
method to reduce the AC resistance of the windings; therefore
conduction angle and is the intervals that the output rectifier
high coupling between primary and secondary windings exist,
is off and the transformer equivalent capacitance is charged or
which leads to negligible leakage inductance, i.e. less than
discharged via the resonant circuit current. Fig. 2(c) presents
500nH. Because transformer leakage inductances are low in
the AC equivalent circuit of the resonant circuit along with
comparison with the series or parallel resonant inductances,
the equivalent impedance from the transformer’s primary
it is possible to ignore them and model the transformer using
side (including transformer equivalent capacitance, the output
magnetizing inductance and winding capacitances. Fig. 1
rectifier, output filter, and load). The steady-state analysis
shows a complete schematic of the half-bridge LLC resonant
of the resonant converter can be carried out by using this
converter with the planar transformer. According to this
equivalent circuit and First Harmonic Approximation analysis
figure, the transformer equivalent capacitor referred to as the
(FHA) [10]. According to Fig. 2(c), in order to calculate
primary side can be determined by the following relations
the voltage gain of the resonant circuit versus frequency
[6]:
variation, the output current should be defined. The output
current is the average value of the output rectifier current and
Cp = Cpo + (1 − n)Cpso , Cs = n2 Cso − n(n − 1)Cpso can be calculated as follows:
=⇒ Ctr = Cp + Cs
(1)  π  2π
1 (1 + cos ψ)
Io = ( i d(ωs t)+ i d(ωs t)) = I (3)
Fig. 2(a) shows the schematic of the output side of 2π ψ π+ψ π
the converter (transferred to the primary side) along with In order to calculate the resonant circuit current (ILs ), it
the equivalent transformer capacitance. The key waveforms is essential to obtain the input impedance of the resonant
of the resonant circuit along with the output rectifier are circuit.
presented in Fig. 2(b). Due to the absence of an inductor
filter in the output rectifier, in the intervals of transferring 2Vin
I Ls = (4)
power from the resonant circuit to the load, the voltage of π|Zin (jωs )|
the equivalent parallel capacitor is clamped to the output
voltage. In non-transferring power mode, when the output Zin (jωs ) =
rectifier is in off-state, the equivalent capacitor is charged
1 1
or discharged and has a semi-sinusoidal shape. In order to + jωs Ls + (jωs Lp )||(Req + ) = |Zin | ejϕ
model the interaction between the output side (the output jωs Cs jωs Ceq
(5)
rectifier, output filter and load) and the equivalent capacitor,
the output-side and the transformer equivalent capacitor are In the above equation, ϕ indicates the phase of the input
modeled using an equivalent resistor and capacitor, which are impedance, which should be positive in all operating condi-
5469
 Io φ
D1 D3
vs2
isec Vo ILS
i
iLS
Ctr vsec Cf
ωst
Z eq
D2 D4

off-state
MOSFETs
(a) Ψ Transient
vsec
iLS Cs Ls i isec
I
iL p Ceq
2Vin Lp
ωst
π Req on-state
Zin
-Vout
(c)
ωst =0 (b)

Fig. 2. (a) The transformer equivalent capacitance and output side of the converter, (b) The key waveforms of the resonant circuit along with the output
rectifier, and (c) AC equivalent circuit of the LLC resonant converter with the planar transformer.

tions. The following normalized parameters are introduced III. D ESIGN P ROCEDURE
for the resonant circuit.
In this section, the validation of the proposed model for the
 LLC resonant converter with planar transformer is examined
Ls 1 ωs Ctr Ls through experimental results. The main specifications of the
Z0 = , ω0 = √ , ωn = , Cn = , Ln = resonant converter are presented in Table I. Fig. 3 shows the
Cs Ls C s ω 0 C s L p
(6) prototype of the planar transformer. According to this figure,
the primary and secondary PCB boards are stacked in the
Using the normalized parameters, the normalized input
interleaved method in order to minimize the high frequency
impedance Zin
Z0 and ψ are derived as follows: AC resistance. Also, this arrangement of the primary and
secondary boards leads to lower leakage inductance (Llk =
jωn sin2 ψ ψ−sin ψ cos ψ 450nH). Table II shows the complete specification of the
Zin (jωn ) 1 Ln ( πCn ωn + πCn jωn )
fabricated transformer. Note that the values of the winding ca-
= (jωn + )+
Z0 jωn jωn 2
sin ψ ψ−sin ψ cos ψ
pacitances have been measured using a Frequency Response
Ln + πCn ωn + πCn jωn
π − 2Cn QL ωn RL Analyzer (FRA). Based on the normalized equations of the
ψ = cos−1 , QL = LLC resonant converter with the planar transformer, the
π + 2Cn QL ωn Z0
(7) behavior of the resonant converter in steady state condition
is presented in Fig. 4 under different load and frequency
Considering Eq. (3)-(7), the normalized voltage gain of conditions. The normalized parameters values are selected
the LLC resonant converter with the planar transformer is based on different factors, such as the equivalent winding
obtained as follows: capacitance of the transformer, the required voltage gain,
the minimization of the series inductance current amplitude
(MOSFETs current), and the values of the input impedance
Vout QL Z0 (1 + cos ψ)I phase to achieve Zero Voltage Switching (ZVS) condition for
Mv = =
 Vin πVin the whole load range. Table III shows the values of voltage

 jωn  (8) gain, the input impedance phase, and the non-conduction
 Ln 
I =  jω  IL angle obtained by analyzing steady state equations at various
 n + sin2 ψ + ψ−sin ψ cos ψ  s
Ln πCn ωn πCn jωn load conditions and fixed output voltage. As indicated in
Fig. 4(a), the normalized switching frequency in nominal
load condition is equal to 1. Therefore, the series resonant
The steady-state analysis of the LLC resonant converter frequency (f0 ) is equal to 200kHz. According to Fig. 4(a),
with the planar transformer can be made using the normalized the voltage gain at fn = 1 (red curve) for the nominal load
equations obtained in this section. conditions is 0.5, therefore, the transformer primary voltage
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 TABLE I
P ROTOTYPE PARAMETERS ALONG WITH VALUES

Parameters Value
Input Voltage, Vin 300V DC
Voltage, Vo 36V DC
Output Power, Po 200W
Switching Frequency, fs 200kHz
Series Resonant Inductance, Ls 89μH
Magnetizing Inductance, Lp 112μH
Series Resonant Capacitor, Cs 7nF
Transformer Capacitor, Ctr 777pF
Ns
Transformer Turn’s Ratio, n = N 0.25
p

Output Filter Capacitor, Cf 6μF

TABLE II
S PECIFICATION OF THE P LANAR T RANSFORMER

Parameters Value
Turns Ratio 16 : 4
Fig. 3. Planar Transformer Configuration. Core Type 38/8/25
Parallel Primary Layers 3
Parallel Secondary Layers 8
PCB Layer’s Material FR − 4
and the transformer turns-ratio are calculated as follows: Copper Thickness 2oz
Insulator kapton tape
Leakage Inductance 450nH

Vout Primary Capacitor 40pF
Vout = Mv .Vin = 150V DC, n =  0.25 (9) Secondary Capacitor 2.5nF
Vout Primary-Secondary Capacitor 620pF
According to (6), the characteristic impedance and the
resonant circuit elements are calculated as follows: TABLE III
S TEADY-S TATE A NALYSIS R ESULTS
RL Vout 2 ϕ, Degree ψ, Degree
= 112.5Ω, ω0 = 400πe3 ,
Norm. Load Norm. Freq.
Z0 = =⇒ Z0 =
QL Pout QL 1 1 20 23
Z0 1 2 1.01 40 28
Ls = = 89μH, Lp = 112μH, Cs = = 7nF 10 1.04 78 43
ω0 Z0 .ω0
(10)
IV. E XPERIMENTAL R ESULTS TABLE IV
E XPERIMENTAL R ESULTS FOR Vout = 36V DC

In the following, the accuracy of the obtained equations Load, Ω Frequency, kHz ϕ, Degree ψ, Degree
and the performance of the LLC resonant converter with pla- 6.5 198 23 20
13 201 42 25
nar transformer are examined through experimental results. 65 203 75 35
Fig. 5 presents the voltage and current waveforms of the
LLC resonant converter for different output load conditions.
According to these figures, the zero crossings of the resonant
circuit current are within the inverter output voltage pulse V. C ONCLUSIONS
and, as a result, in all of the conditions, the half-bridge This paper introduced a new model for a conventional
MOSFETs are fully turned on under zero voltage. Also, LLC resonant converter with planar transformer. The new
the output rectifier diodes are smoothly turned on under steady-state model along with analytical equations can
zero current condition without any voltage spike. The input precisely predict the behavior of the resonant converter for
impedance phase, non-conduction angle, and switching fre- different load conditions. The experimental results extracted
quency are measured through experimental results for fixed from a 200W prototype platform verify the accuracy of the
output voltage and are shown in Table IV. Comparing Tables proposed model, especially in terms of the soft switching
III and IV shows that the values obtained from the theoretical condition of the power MOSFETs under various loads.
analysis and the ones obtained from the experimental results
are very close and that the proposed model can precisely
predict the behavior of the LLC resonant converter with
planar transformer.
5471
 1

Resistance
QL =10 Low-Side
φ =23

Load
QL =2 MOSFET Voltage
Zero
QL =1 Crossing
0.75
Resonant
Circuit
Voltage Gain

fn =1.04
Current
M v =0.5
0.5 Tran. Secondary
Voltage
fn =1
M v =0.5
0.25 Trans. Secondary
Current
Ψ =20
fr,sc

0
0 0.5 1 1.5 2
Normalized Frequency
(a)
(a)
100 fn =1
ϕ=78
No Voltage Spike
fn =1 φ =42
ϕ=40 Zero
Input Impedance Phase

50 Crossing

fn =1
ϕ=20
0
Resistance

QL =10
Load

QL =2
QL =1
-50

Ψ =24
-100
0 0.5 1 1.5 2
Normalized Frequency
(b)
60 (b)
fn =1.04
Ψ =43
φ =78
Non-Conduction Angle

45 Zero
fn =1.01 Crossing
Ψ =28
30

fn =1
Ψ =23
15
Resistance

QL =10
Load

QL =2
QL =1 Ψ =35
0
0 0.5 1 1.5 2
Normalized Frequency
(c)

Fig. 4. First Harmonic Approximation analysis of the LLC resonant (c)

converter with planar transformer for Ln = 0.8 & Cn = 0.1, with
constant values for normalized load resistances (QL ): (a) Magnitude of Fig. 5. Experimental results for the LLC resonant converter with the planar
voltage transfer function (Mv ), (b) Phase of the input impedance (ϕ), and transformer, (a) Pout = 200W , (b) Pout = 100W , (c) Pout = 20W .
(c) the non-conduction angle (ψ).

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