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IEEE TRANSACTIONS ON ELECTRON DEVICES
A Charge-Plasma-Based Dielectric-Modulated
Junctionless TFET for Biosensor
Label-Free Detection
Deepika Singh, Sunil Pandey, Kaushal Nigam, Dheeraj Sharma, Dharmendra Singh Yadav, and Pravin Kondekar
Abstract— To reduce the fabrication complexity and cost of
the nanoscale devices, a charge-plasma concept is introduced for
the first time to implement a dielectric-modulated junctionless
tunnel field-effect transistor (DM-JLTFET) for biosensor label-
free detection. The formation of p+ source and n+ drain regions
in DM-JLTFET is done by the deposition of platinum (work
function = 5.93 eV) and hafnium (work function = 3.9 eV) mate-
rials, respectively, over the silicon body. Furthermore, a nanogap
cavity embedded within the gate dielectric is created by etching
the portion of gate oxide layer toward the source end for sensing
biomolecules. For this, the sensing capability of DM-JLTFET
has been investigated in terms of variation in dielectric constant,
charge density, length, and thickness of the cavity at different bias
conditions. Finally, a comparative study between DM-JLTFET
and MOSFET biosensor is investigated. The implementation of
proposed device and all the simulations have been performed by
using ATLAS device simulator.
Index Terms— Band-to-band tunneling (BTBT), biosensors,
charge plasma, dielectric-modulated junctionless tunnel-field-
effect transistor (DM-JLTFET), short channel effect (SCE).
I. I NTRODUCTION
R ECENTLY, human interventions and bioterrorism have
created problems related to the pollution of ecosys-
tem, because pollution monitoring and supervision of bio-
logical pathogens have become a challenge for early-stage
detection and diagnosis of systems. Therefore, enlargement
of extremely responsive handheld biosensors with greater
life, robustness, and effectiveness is the need of the cur-
rent generation. They can act as a competent device for
the cost-effective supervision of diseases and inspection of
biohazards in the ecosystem. In the literature [1]–[9], FET-
based label-free biosensors have been widely used because
of their potentiality to detect the biological species. Ion-
sensitive field-effect transistors have also been introduced as
a part of FET family, to detect the biomolecules based on the
existence of charge between the dielectric gate and the ionic
solution [10], [11]. However, they suffer from the detection
Manuscript received August 5, 2016; revised September 28, 2016; accepted
October 23, 2016. The review of this paper was arranged by Editor G. Ghione.
The authors are with the Nanoelectronics and VLSI Laboratory,
Electronics and Communication Engineering Department, PDPM-Indian
Institute of Information Technology, Design and Manufacturing Jabalpur,
Jabalpur 482005, India (e-mail: deepikasingh@iiitdmj.ac.in; sunilpandey@
iiitdmj.ac.in; kaushal.nigam@iiitdmj.ac.in; dheeraj@iiitdmj.ac.in;
dharmendra.yadav@iiitdmj.ac.in; pnkondekarg@iiitdmj.ac.in).
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TED.2016.2622403
0018-9383 © 2016 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
1
of noncharged molecules. Apart from this, the scaling of FET
(bulk MOSFET) for compactness and performance improve-
ment of biosensor equipments gives rise to the following
limitations: detection time is very large due to kT /q limit
[subthreshold swing (SS) > 60 mV/decade], short channel
effects, drain-induced barrier lowering, low ION /IOFF ratio, high
power consumption due to leakage, and limitations related
to scaling of threshold voltage with supply voltage [1]–[9].
For this, a tunnel FET-based biosensor has been extensively
explored and emerged as a potential candidate due to its
ability to provide better sensitivity, improved response time,
and energy efficient due to low leakage, and is proficient to
overcome all the aforementioned issues related to FET-based
biosensors [13]–[15]. In addition to these, in an earlier reported
work of FET and physically doped TFET [16], high doping
concentration (in source/drain region) makes the fabrication
process very complex, which results in a higher thermal budget
and expensive thermal annealing technique. Aside from these,
the formation of an abrupt junction profile is also a challenging
task due to diffusion of carriers from source/drain to the
channel region [17]. Thus, it suffers from random dopant
fluctuations, which results in the degradation of the device
performance. In this concern, junctionless TFET has been
explored in [18], which makes fabrication process simpler as
it does not need abrupt doping and high thermal budget. Thus,
an investigation is required to check its potentiability in terms
of biosensor label-free detection.
Therefore, we investigate a charge-plasma-based
dielectric-modulated junctionless tunnel field-effect
transistor (DM-JLTFET) that can be utilized to sense
the biomolecules. For this purpose, p+ source and n+ drain
regions are induced by suitable metal work-function
electrodes. Furthermore, a nanogap is created within the
gate dielectric to accumulate the biomolecules. For this
purpose, the device performance has been analyzed in terms
of energy band diagram, e− tunneling rate, surface potential,
drain current (Ids ), SS, and sensitivity. However, the main
emphasis in this paper is to find out the impact of charge
density and dielectric constant variation on the electrical
characteristics of the proposed device. At the end, sensing
capability of DM-JLTFET and MOSFET-based biosensor has
been analyzed.
This paper is summarized as follows. Section II describes
the device structure and simulation setup with model descrip-
tions. Simulation results of the proposed DM-JLTFET are
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2 IEEE TRANSACTIONS ON ELECTRON DEVICES
Fig. 1. Cross-sectional view of the nanogap-embedded charge-plasma-based
DM-JLTFET biosensor.
discussed in Section III. Finally, in Section IV, the conclusion
and important points about work are presented.
II. D EVICE S TRUCTURE , S IMULATION , AND O PERATION
The cross-sectional view of a double-gate charge-plasma-
based DM-JLTFET is shown in Fig. 1. In DM-JLTFET,
indicated p+ and n+ regions are created by the deposition
of appropriate metal work-function electrodes [17], [19]. The
essential requirement to induce n+ drain region (through
charge plasma) is that the work function of drain contact
should be less than intrinsic silicon (φ m D < χ Si + Eg /2),
where χ Si is the electron affinity of silicon (χ Si = 4.17 eV)
and Eg denotes the bandgap of Si material [17], [19], whereas
to induce p+ source region, the work-function of metallic
contact should be more than intrinsic Si (φ m S > χ Si + Eg /2).
However, the thickness of Si must be less than the Debye
length (( Si VT )/e · N))1/2, where  Si is the dielectric constant
of Si, VT is the thermal voltage, and N is the carrier concen-
tration in Si material. Thus, the platinum and hafnium with
work-functions as 5.93 and 3.9 eV are considered to fulfill the
essential requirement of the charge-plasma concept. However,
silicon thickness (tsi = 10 nm) less than the Debye length is
employed, which is similar to [17]; therefore, it accomplishes
the next requirement of the charge-plasma concept.
The length (L in ) between gate electrode and the electrode
required for inducing the drain region is 5 nm. A space (L gap )
between the cavity and the electrode required for inducing
the source region is 2 nm. The other parameters of device
shown in Fig. 1 are the gate length (L g ) = 53 nm, length
of the source (L s ) and drain (L d ) region = 45 nm, length
of the nanogap cavity (L cavity) = 23 nm, thickness of the
nanogap cavity (tcavity) = 5.5 nm, and gate work-function
(φ g ) = 4.1 eV. The work-functions of 5.93 eV (platinum)
and 3.9 eV (hafnium) are used for source and drain con-
tacts at the edges of the silicon body. The simulations are
performed by using the 2-D ATLAS device simulator from
the Silvaco V5.19.20 [20]. In TFET’s simulation, most impor-
tant part is the choice of band-to-band tunneling (BTBT)
model. In [21], local model is used for the calculation of
tunneling rate at each point of the electric field. On the
other hand, nonlocal model calculates the tunneling rate
by the variation in energy band diagram. Therefore, we
have considered the nonlocal BTBT model in the simulation
to calculate the generation rate at the tunneling junction.
To enable tunneling, a quantum tunneling region is defined
at the source/channel interface. Along with these, Shockley–
Read–Hall (for recombination), Auger (for minority carriers),
Fermi–Dirac statistics, and the field-dependent mobility are
also considered in the simulation. Trap-assisted tunneling
model described in [20] is also incorporated in simulation, as
it shows dominance in the OFF-state. Moreover, the Wentzel–
Kramers–Brillouin approach is used to evaluate the numerical
tunneling probability. A nonuniform denser meshing is con-
sidered at the junction for the computational precision.
In the case of DM-JLTFET, the dielectric constant and
charge density of nanogap cavity are the governing parame-
ters for the gate controlling over the tunneling junction at
the source/channel interface. Thus, the drain current changes
significantly with the change in dielectric constant and charge
density. The nanogap cavity is considered toward the source
side, because it has significant impact on the electrical charac-
teristics of the proposed device [15]. The detailed description
of the formation of nanogap cavity (L cavity) under the gate
region has been mentioned in [14]. Initially, nanogap is filled
with air (k = 1), whereas the dielectric constant k > 1 is
used to represent the nanogap filled with biomolecules. As the
cavity is filled with the biomolecules, there is an increment
in gate capacitance, thus resulting in an improvement in the
drain current in the case of DM-JLTFET, which can be used
for sensing the biomolecules in the label-free biosensor. The
behavior of biomolecules in the nanogap cavity is analyzed in
terms of negative charge density for the DNA analysis [15].
III. R ESULTS AND D ISCUSSION
In this section, first, we focus on the tunneling mechanism
from source to channel through the BTBT process using
biomolecules in terms of variation in dielectric constant and
charge density. It may be noted that the band bending in
the channel portion under the nanogap cavity is the most
important requirement in the context of biomolecules conju-
gation [15], [16]. In Fig. 2(a), the energy band diagram of
DM-JLTFET is shown under OFF state, while Fig. 2(b) and (c)
shows the energy band diagram under ON state along horizon-
tal X-position with different dielectric constants and charge
densities. Under OFF condition (Vgs = 0 V and Vds = 0.5 V),
the barrier width between the source and the channel is
large, which means that more energy is required to tunnel the
electrons from the valence band of source to the conduction
band of the channel region.
Fig. 2(b) shows the relevant energy band diagram of
DM-JLTFET under the ON-state condition (Vgs = 1.5 V and
Vds = 0.5 V) for different dielectric constants (k). It shows
that band bending increases due to the increase in the dielectric
constant, which leads to reduction in barrier width. However,
Fig. 2(c) shows the impact of charge density on the energy
band diagram of DM-JLTFET under the nanogap cavity. It can
be noted that the barrier width under the nanogap cavity
increases with the increase in the negative charge density.
In this respect, it is important to analyze the effect of change in
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SINGH et al.: CHARGE-PLASMA-BASED DM-JLTFET FOR BIOSENSOR LABEL-FREE DETECTION
Fig. 2. Energy band diagram of DM-JLTFET along X-position
in (a) OFF-state (Vgs = 0 V and Vds = 0.5 V). Energy band diagram of
DM-JLTFET along X-position with different (b) dielectric constants (ρ = 0)
and (c) charge densities (k = 5) in ON-state (Vgs = 1.5 V and Vds = 0.5 V).
Fig. 3. e− tunneling rate of the DM-JLTFET with different (a) dielectric
constants (ρ = 0) and (b) charge densities (k = 5) at Vgs = 1.5 V and
Vds = 0.5 V.
the energy band diagram of DM-JLTFET on the e− tunneling
rate. Fig. 3(a) and (b) shows the behavior of the e− tunneling
rate with different dielectric constants and charge densities.
3
Fig. 4. Plots of surface potential of the DM-JLTFET along X-position with
different (a) dielectric constants (ρ = 0) and (b) charge densities (k = 5) at
Vds = 0.5 V.
It can be seen that in the presence of biomolecules (k > 1),
barrier width reduces; hence, increment in the e− tunneling
rate and ION is observed (see the inset). On the other hand,
Fig. 3(b) shows that as the density of the negative charge
increases, the e− tunneling rate and ION decreases due to the
increment in the tunneling barrier width.
To understand the behavior of DM-JLTFET biosensor in
terms of electrostatic potential, it is essential to investigate
the surface potential under the nanogap cavity [14].
Fig. 4(a) and (b) shows the surface potential along the
X-position with different dielectric constants and charge
densities, respectively. It can be seen that the surface potential
attains a smaller value in the absence of biomolecules
(k = 1), whereas it achieves a higher value in the presence of
biomolecules (k > 1) under the nanogap cavity. It is due to
the fact that, as the dielectric constant increases, the barrier
width reduces at the source–channel interface due to better
coupling between the gate and the channel, which results in
an effective rise in the surface potential. In a similar way,
with an increase in the negative charge density, the flat band
voltage (Vfb ) increases by a term of (eρ/C) in the nanogap
cavity [15], where ρ is the charge density and C is the
capacitance. Hence, the surface potential under the nanogap
cavity decreases [see Fig. 4(b)]. Fig. 5(a) and (b) shows
the relevant Ids –Vgs characteristics of the DM-JLTFET for
different dielectric constants and charge densities. With the
air cavity (k = 1), Ids attains a lower value in the order of
10−13 (A/μm) at Vgs = 1.5 V and Vds = 0.5 V. In addition to
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4 IEEE TRANSACTIONS ON ELECTRON DEVICES

Fig. 5. Ids –Vgs characteristics of DM-JLTFET with different (a) dielec- Fig. 6. Ids –Vds characteristics of DM-JLTFET with different (a) dielectric
tric constants (ρ = 0) and (b) charge densities (in the range from constants (ρ = 0) and (b) charge densities (k = 5) (in the range from
−1011 to −1015 cm−2 ) at Vds = 1.5 V. −1011 to −1015 cm−2 ) at Vgs = 0.5 V.

this, a significant increment in Ids is seen in the presence of

biomolecules (k > 1). However, Fig. 5(b) follows an opposite
behavior with an increment in the negative charge density.
Its main reason is that, increment in the negative charge
density leads to a decrement in the surface potential, which
results in degradation in drain current [15]. It is important
to highlight that the significant variation in the drain current
is achieved from ρ = −5 × 1011 to −1×1015 cm−2 (with
Fig. 7. Plots of ION /IOFF ratio of DM-JLTFET biosensor are shown with
k = 5). Fig. 6(a) and (b) shows Ids –Vds characteristics of different (a) dielectric constants (ρ = 0) and (b) charge densities (k = 5).
DM-JLTFET, where a similar behavior like that in
Fig. 5(a) and (b) is observed in respective manner with differ-
ent dielectric constants and charge densities. Fig. 7(a) and (b) air and I bio are the drain currents when biomole-
In (1), Idrain drain
shows the behavior of the ION /IOFF ratio with different cules are absent or present in the nanogap cavity, respectively.
dielectric constants and charge densities, respectively. It can Fig. 8(a) and (b) shows the drain current (Ids ) sensitivity as a
be seen that ION /IOFF ratio increases with an increase in the function of Vgs with different dielectric constants and charge
dielectric constant. On the other hand, it decreases with an densities. It can be seen that Ids sensitivity increases with an
increase in the negative charge density. It is necessary to increase in the dielectric constant. The significant shift in
point out that the increment/decrement in the ION /IOFF ratio Ids sensitivity along the gate bias denotes the capability of
with the dielectric constant/charge density is due to respective DM-JLTFET to sense the charge in the cavity [14], [23].
increment/decrement in ION current [as shown in However, a reduction in Ids sensitivity is noticed with an
Fig. 3(a) and (b) (inset)]. To explain the robustness of increase in the negative charge density [22], which can be
the DM-JLTFET biosensor, it is important to analyze drain analyzed from Fig. 8(b). The significant variation in Ids
current sensitivity with the bias across where sensitivity is sensitivity shows the detectability of the proposed device as
defined as [14] a label-free biosensor in the range of −1011 to −1015 cm−2 .
  Fig. 8(c) and (d) shows the Ids sensitivity as a function of drain
bio − I air
Idrain
Sdrain = drain
. (1) bias with different dielectric constants and charge densities.
air
Idrain It is apparent from these plots that the improvement in Ids
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SINGH et al.: CHARGE-PLASMA-BASED DM-JLTFET FOR BIOSENSOR LABEL-FREE DETECTION
Fig. 8. Characteristics of Ids sensitivity of DM-JLTFET along Vgs with
different (a) dielectric constants (ρ = 0) and (b) charge densities (in the
range from −1011 to −1015 cm−2 ) at Vds = 0.5 V (k = 5). Char-
acteristics of Ids sensitivity of the DM-JLTFET along Vds with different
(c) dielectric constants (ρ = 0) and (d) charge densities (in the range from
−1011 to −1015 cm−2 ) at Vgs = 1.5 V (k = 5).
Fig. 9. Plots of (a) SS and (b) SS sensitivity of the DM-JLTFET with
different dielectric constants (ρ = 0).
sensitivity is higher at lower drain bias with different dielectric
constants and charge densities. Apart from this, the SS is also
one of the important parameters for analyzing the performance
of the TFET-based biosensor [13]. The SS is a measure of its
effectiveness of gate voltage over the channel region, which
is defined as follows [21]:
 
δVgs
SS = mV/decade. (2)
δ log Ids
It is clear from (2) that SS is highly dependent on the gate
bias. It is described in [21] that SS of a conventional FET
is affected by the diffusion current mechanism. On the other
hand, SS of TFET relies mainly on the tunneling phenomenon
rather than thermionic emission as in the case of MOSFET.
Fig. 9(a) and (b) shows SS and its dependence on the dielectric
constant, where biomolecule conjugation increases the gate
controlling, and thus a reduction in SS with an increase
in dielectric constant is observed. As a result, a significant
enhancement in SS sensitivity with respect to dielectric con-
stant is achieved [Fig. 9(b)]. This implies that a smaller SS
leads to a superior detection capability and better electrical
response of DM-JLTFET biosensor.
5
Fig. 10. Impact of cavity length variation (k = 2) on (a) transfer
characteristics and (b) Ids sensitivity of the DM-JLTFET at Vds = 0.5 V.
Fig. 11. Plots of Ids –Vgs characteristics of DM-JLTFET with different values
of tcavity (k = 2) at Vds = 0.5 V.
A. Impact of Geometry Parameters on Device Performance
The impact of variation in cavity length (L cavity) on
Ids –Vgs characteristics is shown in Fig. 10(a) for the
DM-JLTFET biosensor. As the length of the cavity changes,
no significant change in Ids with gate bias is observed. Thus,
the variation in cavity length does not have much impact on
the transfer characteristics, because working mechanism in
DM-JLTFET is based on the tunneling phenomenon rather
than diffusion mechanism as in the case of conventional
FET [15]. Fig. 10(b) shows the Ids sensitivity variation with
gate bias for different values of L cavity . It can be seen that
a slight change in Ids sensitivity occurs with the reduction
in L cavity .
Fig. 11 shows the effect of change in tcavity on the
Ids –Vgs characteristics. It can be seen that, as tcavity increases,
drain current decreases due to increment in the tunneling
barrier at the source–channel interface, which results in the
conduction of device at higher Vgs . Fig. 12(a) shows the effect
of L cavity variation on the Ids sensitivity. With the increment
in L cavity , a small change in Ids sensitivity is achieved [as seen
in Fig. 12(a)], because sensitivity is not much affected by vari-
ation in cavity length [15]. As reported in [15], ION changes
with the change in L cavity only when the cavity is filled
with air (i.e., k = 1) in the case of TFET. However, in
the case when cavity is filled with biomolecules (k > 1),
ION does not vary with L cavity because of its dependence
only on dielectric constant of the biomolecules for TFET [15].
Apart from this, the change in SS values for different values
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6 IEEE TRANSACTIONS ON ELECTRON DEVICES
Fig. 12. Plots of (a) Ids sensitivity, (b) SS, and (c) SS sensitivity with
different values of L cavity (k = 2).
of L cavity at Vds = 0.5 V can be seen from Fig. 12(b). It can
be viewed that as the L cavity increases, a very small change
in the SS value is observed due to a respective change in
its Ids characteristics, as shown in Fig. 10(a). Moreover, a
small change in SS sensitivity (0.12 for a gap of 3 nm from
14–17 nm and 0.03 for a gap of 3 nm from 17–20 nm) is
observed with variation in L cavity , as shown in Fig. 12(c).
Furthermore, a comparison of DM-JLTFET with FET-based
biosensor has been shown in Fig. 13(a)–(d). From
Fig. 13(a) and (b), the order of current in the case of
DM-JLTFET is lower than the MOSFET-based biosensor due
to the different mechanism of current flow. Furthermore,
Fig. 13(a)–(d) shows the plots of ION and ION /IOFF ratio
for DM-JLTFET and MOSFET, where both the parameters
are used as sensing parameters and a large variation in
characteristic of DM-JLTFET shows better sensitivity of the
proposed device. In this concern, it can be noticed from
these plots that the variation in ION and ION /IOFF ratio for
DM-JLTFET with different dielectric constants at distinct
L cavity is extremely high in comparison with that of MOSFET.
From Fig. 13(a) and (b), it can be seen that change in ON
current in the case of DM-JLTFET with charged biomolecules
(having a charge density of −1012 cm−2 ) is approximately ten
times as compared with that of −1011 cm−2 . On the other
hand, the change is approximately two times in the case of an
MOSFET biosensor.
Similarly, the benefit of using DM-JLTFET over an
MOSFET-based biosensor can be analyzed in terms of
ION /IOFF ratio with variation in L cavity and tcavity. From
Fig. 13(c) and (d), it can be viewed that ION /IOFF ratio increases
with an increase in dielectric constant values, and there is
a drastic improvement in the ION /IOFF ratio of DM-JLTFET
(80 times at k = 10 and L cavity = 17 nm) as compared with
Fig. 13. Impact of charge density of biomolecules on ON-state current of
(a) DM-JLTFET and (b) MOSFET for various dielectric constant values at
Vgs = 1.5 V and Vds = 0.5 V. Plots of ION /IOFF ratio of (c) DM-JLTFET
and (d) MOSFET as a function of dielectric constant at different lengths of
cavity (L cavity ) at Vgs = 1.5 V and Vds = 0.5 V. Plots of ION /IOFF ratio
of (e) DM-JLTFET and (f) MOSFET as a function of dielectric constant at
different thicknesses of cavity (tcavity ) at Vgs = 1.5 V and Vds = 0.5 V.
that of k = 5 (with L cavity = 17 nm), whereas for an MOSFET
biosensor, there is no significant change in the ION /IOFF ratio
with dielectric constant values, since ION and IOFF do not
change significantly, even though the ION /IOFF ratio of the
MOSFET biosensor is large as compared with DM-JLTFET. In
terms of absolute values, there is only 1.3 times increment in
ION /IOFF ratio for the MOSFET biosensor. In a similar fashion,
it can be analyzed from Fig. 13(e) and (f) that there is a
significant increment in the ION /IOFF ratio of DM-JLTFET with
tcavity as compared with that for an MOSFET-based biosensor.
Hence, these results reveal that DM-JLTFET shows superior
characteristics for biosensor label-free detection in comparison
with the MOSFET-based biosensor.
IV. C ONCLUSION
In this paper, we presented a charge-plasma-based
DM-JLTFET biosensor for the detection of biomolecules. The
p+ and n+ in source and drain regions of DM-JLTEFT are
induced by the charge-plasma concept on an ultrathin silicon
film by using suitable metal work-function electrodes, making
it superior in terms of low thermal budget, simpler fabrication
process, and low cost. The impacts of dielectric constant and
charge density on the drain current, ION /IOFF ratio, Ids , and
SS sensitivity are investigated. The simulation results show
that the DM-JLTFET can be used for making an ultrasensitive
label-free bio-equipment. Furthermore, it has also been noticed
that the DM-JLTFET shows superior results for the detection
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SINGH et al.: CHARGE-PLASMA-BASED DM-JLTFET FOR BIOSENSOR LABEL-FREE DETECTION 7

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[8] R. Gautam, M. Saxena, R. S. Gupta, and M. Gupta, “Numerical model of Sunil Pandey received the B.Tech. degree in elec-
gate-all-around MOSFET with vacuum gate dielectric for biomolecule tronics engineering from the Institute of Engineering
detection,” IEEE Electron Device Lett., vol. 33, no. 12, pp. 1756–1758, and Rural Technology, Allahabad, India, in 2010,
Dec. 2012. and the M.Tech. degree in microelectronics systems
[9] J. M. Choi, J.-W. Han, S.-J. Choi, and Y.-K. Choi, “Analytical modeling and embedded technology from the Jaypee Insti-
of a nanogap-embedded FET for application as a biosensor,” IEEE Trans. tute of Information Technology, Noida, India, in
Electron Devices, vol. 57, no. 12, pp. 3477–3484, Dec. 2010. 2012. He is currently pursuing the Ph.D. degree in
[10] A. Bandiziol, P. Palestri, F. Pittino, D. Esseni, and L. Selmi, “A TCAD- electronics and communication engineering with the
based methodology to model the site-binding charge at ISFET/electrolyte PDPM-Indian Institute of Information Technology,
interfaces,” IEEE Trans. Electron Devices, vol. 62, no. 10, Design and Manufacturing Jabalpur, Jabalpur, India.
pp. 3379–3386, Oct. 2015.
[11] R. Narang, M. Saxena, R. S. Gupta, and M. Gupta, “Dielectric modulated
tunnel field-effect transistor—A biomolecule sensor,” IEEE Electron
Device Lett., vol. 33, no. 2, pp. 266–268, Feb. 2012.
[12] D. Sarkar and K. Banerjee, “Fundamental limitations of conventional-
FET biosensors: Quantum-mechanical-tunneling to the rescue,” in Proc.
70th Annu. Device Res. Conf., Jun. 2012, pp. 83–84.
[13] S. Kanungo, S. Chattopadhyay, P. S. Gupta, K. Sinha, and H. Rahaman,
Kaushal Nigam received the B.Tech. degree in
“Study and analysis of the effects of SiGe source and pocket-doped
electronics and communication engineering from the
channel on sensing performance of dielectrically modulated tunnel
Madan Mohan Malaviya University of Technology,
FET-based biosensors,” IEEE Trans. Electron Devices, vol. 63, no. 6,
Gorakhpur, India, in 2009, and the M.Tech. degree
pp. 2589–2596, Jun. 2016.
in VLSI and embedded system design from the
[14] S. Kanungo, S. Chattopadhyay, P. S. Gupta, and H. Rahaman, “Compar-
Maulana Azad National Institute of Technology,
ative performance analysis of the dielectrically modulated full-gate and
Bhopal, India, in 2011. He is currently pursuing
short-gate tunnel FET-based biosensors,” IEEE Trans. Electron Devices,
the Ph.D. degree in electronics and communica-
vol. 62, no. 3, pp. 994–1001, Mar. 2015.
tion engineering with the PDPM-Indian Institute of
[15] R. Narang, K. V. S. Reddy, M. Saxena, R. S. Gupta, and M. Gupta,
Information Technology, Design and Manufacturing
“A dielectric-modulated tunnel-FET-based biosensor for label-free detec-
Jabalpur, Jabalpur, India.
tion: Analytical modeling study and sensitivity analysis,” IEEE Trans.
Electron Devices, vol. 59, no. 10, pp. 2809–2817, Oct. 2012.
[16] R. Narang, M. Saxena, and M. Gupta, “Comparative analysis of
dielectric-modulated FET and TFET-based biosensor,” IEEE Trans.
Nanotechnol., vol. 14, no. 3, pp. 427–435, May 2015.
[17] C. Sahu and J. Singh, “Charge-plasma based process variation immune
junctionless transistor,” IEEE Electron Device Lett., vol. 35, no. 3,
pp. 411–413, Mar. 2014. Dheeraj Sharma received the B.E. degree in
[18] B. Ghosh and M. W. Akram, “Junctionless tunnel field effect transistor,” electrical engineering from Rajiv Gandhi Proudyo-
IEEE Electron Device Lett., vol. 34, no. 5, pp. 584–586, May 2013. giki Vishwavidyalaya, Bhopal, India, in 2004, the
[19] M. J. Kumar and S. Janardhanan, “Doping-less tunnel field effect M.Tech. degree in microelectronics and very large
transistor: Design and investigation,” IEEE Trans. Electron Devices, scale integration design from the Shri Govin-
vol. 60, no. 10, pp. 3285–3290, Oct. 2013. dram Seksaria Institute of Technology and Science,
[20] ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA, USA, Indore, India, in 2009, and the Ph.D. degree from
2016. IIT Indore, Indore, in 2014.
[21] K. Boucart and A. M. Ionescu, “Double-gate tunnel FET with high-
κ gate dielectric,” IEEE Trans. Electron Devices, vol. 54, no. 7,
pp. 1725–1733, Jul. 2007.
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

8 IEEE TRANSACTIONS ON ELECTRON DEVICES

Dharmendra Singh Yadav received the Pravin Kondekar received the M.Tech. degree from
M.E. degree in electronics and telecommunication the Indian Institute of Science, Bengaluru, and the
from the Shri Govindram Seksaria Institute of Ph.D. degree from IIT Bombay, Mumbai, India.
Technology and Science, Indore, India, in 2011. He held a faculty position in Korea Adanced
He is currently pursuing the Ph.D. degree in Institute of Scienec and Technology, Daejeon,
electronics and communication engineering South Korea. He is currently a Professor with
from the PDPM-Indian Institute of Information the ECE Department, PDPM-Indian Institute of
Technology, Design and Manufacturing Jabalpur, Information Technology Design and Manufacturing
Jabalpur, India. Jabalpur, Jabalpur, India.
His current research interest includes simulation
and modeling for ultralow power and high-frequency
application-based devices and circuit.
 This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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