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VCC
Programmable
Trim
Regulator
8 Bits
4 Bits
Sample and Hold
Dynamic Offset
OUTPUTA
Cancellation
Low- Output
Amp Pass
Filter Drive
4 Bits
Sample and Hold
OUTPUTB
Dynamic Offset
Cancellation
Low- Output
Amp Pass
Filter Drive
GND
Terminal List
Package
Symbol Description
K L
VCC Connects power supply to on-chip voltage regulator 1 1
OUTPUTA Output from first Schmitt circuit 2 2
OUTPUTB Output from second Schmitt circuit 3 3
GND Ground 4 4
– No connection – 5, 6, 7, 8
OPERATING CHARACTERISTICS Valid over operating temperature ranges unless otherwise noted; typical data applies to
VCC = 12 V, and TA = 25ºC
Characteristic Symbol Test Conditions Min. Typ. Max Units
ELECTRICAL CHARACTERISTICS
Supply Voltage1 VCC Operating; TA ≤ 150°C 3.3 – 18 V
Output Leakage Current IOUTPUT(OFF) Either output – <1 10 µA
Output Rise Time tr CLOAD = 20 pF, RLOAD = 820 Ω – 110 – ns
Output Fall Time tf CLOAD = 20 pF, RLOAD = 820 Ω – 55 – ns
ICC(OFF) B < BRP(A) ,B < BRP(B) – 3.5 6.0 mA
Supply Current
ICC(ON) B > BOP(A) ,B > BOP(B) – 4.0 6.0 mA
Both outputs; IOUTPUT(SINK) = 20 mA; B > BOP(A),
Low Output Voltage VOUTPUT(ON) – 160 500 mV
B > BOP(B)
Output Sink Current IOUTPUT(SINK) – – 20 mA
Output Sink Current, Continuous2 IOUTPUT(SINK)C TJ < TJ(max) ,VOUTPUT = 12 V – – 70 mA
Output Sink Current, Peak3 IOUTPUT(SINK)P t < 3 seconds – – 220 mA
Chopping Frequency fC – 340 – kHz
TRANSIENT PROTECTION CHARACTERISTICS
Supply Zener Voltage VZ ICC = 15 mA 28 33 37 V
Supply Zener Current4 IZ VS = 28 V – – 9.0 mA
Reverse-Battery Current IRCC VRCC = –18 V, TJ < TJ(max) – 2 15 mA
OPERATING CHARACTERISTICS (continued) Valid over operating temperature ranges unless otherwise noted; typical
data applies to VCC = 12 V, and TA = 25ºC
EMC
Contact Allegro MicroSystems for EMC performance.
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
16
15
14 High-K PCB, Package L
13 (RθJA = 80 ºC/W)
12
11 Minimum-K PCB, Package L
10 (RθJA = 140 ºC/W)
9
8 Minimum-K PCB, Package K
7 (RθJA = 177 ºC/W)
6
5
4 VCC(min)
3
2
20 40 60 80 100 120 140 160 180
Temperature (ºC)
H
1200 (R igh
-K
1100 θJ
A = PC
1000 80 B,
ºC Pa
900 Min /W ck
(R imum ) ag
800 e
700
θJA
= 1 -K P L
40 CB
ºC , Pa
600 Min /W
) cka
ge
500 (R imum- L
θJA = KP
400 177 CB,
ºC/ Pac
300 W) kag
eK
200
100
0
20 40 60 80 100 120 140 160 180
Temperature, TA (°C)
Functional Description
Chopper-Stabilized Technique
When using Hall effect technology, a limiting factor chop frequency. This high-frequency operation allows
for switchpoint accuracy is the small signal voltage for a greater sampling rate, which produces higher
developed across the Hall element. This voltage is accuracy and faster signal processing capability. This
disproportionally small relative to the offset that can approach desensitizes the chip to the effects of ther-
be produced at the output of the Hall device. This mal and mechanical stress. The disadvantage to this
makes it difficult to process the signal and maintain approach is that jitter, also known as 360° repeatability,
an accurate, reliable output over the specified tem- can be induced on the output signal. The sample-and-
perature and voltage range. hold process, used by the demodulator to store and
Chopper stabilization is a unique approach used recover the signal, can slightly degrade the signal-to-
to minimize Hall offset on the chip. The patented noise ratio. This is because the process generates rep-
Allegro technique, dynamic quadrature offset can- licas of the noise spectrum at the baseband, causing a
cellation, removes key sources of the output drift decrease in jitter performance. However, the improve-
induced by thermal and mechanical stress. This offset ment in switchpoint performance, resulting from the
reduction technique is based on a signal modulation- reduction of the effects of thermal and mechanical
demodulation process. The undesired offset signal is stress, outweighs the degradation in the signal-to-noise
separated from the magnetically induced signal in the ratio.
frequency domain through modulation. The subse- This technique produces devices that have an
quent demodulation acts as a modulation process for extremely stable quiescent Hall element output volt-
the offset, causing the magnetically-induced signal to age, are immune to thermal stress, and have precise
recover its original spectrum at the baseband level, recoverability after temperature cycling. This tech-
while the dc offset becomes a high-frequency signal. nique is made possible through the use of a BiCMOS
Then, using a low-pass filter, the signal passes while process, which allows the use of low-offset and
the modulated dc offset is suppressed. low-noise amplifiers in combination with high-density
The chopper stabilization technique uses a 170 kHz logic integration and sample-and-hold circuits. This
high-frequency clock. The Hall element chopping process is illustrated in the following diagram.
occurs on each clock edge, resulting in a 340 kHz
Regulator
Sample and Hold
Low-
Amp Pass
Filter
V+
VOUTPUT(OFF)
Switch to High
Switch to Low
VOUTPUT
VOUTPUT(ON)(sat)
B+
BOP
BRP
BHYS
M agnetic Field
Sensor A
M agnetic Field
Sensor B
Output Sensor A
Output Sensor B
VOUTPUTB
VOUTPUTA
2
OUTPUTA
A3425
VSupply 1 3
VCC OUTPUTB
GND
0.1 uF 4
Regulated supply
VOUTPUTB
VOUTPUTA
2
OUTPUTA
A3425
VSupply 1 3
VCC OUTPUTB
100 Ω
GND
4
0.1 uF
Unregulated supply
PD = VIN × IIN (1) Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-
able operation between VCC(est) and VCC(max) requires enhanced
∆T = PD × RθJA (2) RθJA. If VCC(est) ≥ VCC(max), then operation between VCC(est) and
VCC(max) is reliable under these conditions.
TJ = TA + ∆T (3)
PD = VCC × ICC = 12 V × 4 mA = 48 mW
ICC(off) ICC(off)
8 8
7 7
6 6
5 3.3 V
Current (mA)
Current (mA)
5
-40°C
4 18 V
4
25°C
3 150°C 3
2 2
1 1
0 0
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
ICC(on) ICC(on)
8 8
7 7
6 6
5
Current (mA)
5
Current (mA)
-40°C
4 4 3.3 V
25°C
18 V
3 150°C 3
2 2
1 1
0 0
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
400
Vsat (mV)
300 Ch. A
Ch. B
200
100
0
-50 0 50 100 150 200
Temperature (°C)
20 20
BOP BOP
Switchpoint (G)
Switchpoint (G)
10 10 3.3 V
-40°C
0 0 12 V
BRP 25°C BRP
18 V
-10 150°C -10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
20 20
BOP BOP
Switchpoint (G)
Switchpoint (G)
10 10 3.3 V
-40°C
0 BRP 25°C 0 BRP 12 V
150°C 18 V
-10 -10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
Temperature (°C)
VCC (V)
25 25
BOP - BRP (G)
BOP - BRP (G)
20 20
-40°C 3.3 V
15 25°C 15 12 V
150°C 10 18 V
10
5
5
0
0 -50 0 50 100 150 200
0 5 10 15 20
VCC (V) Temperature (°C)
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
20 20
Ch. A - Ch. B (G)
Ch. A - Ch. B (G)
10 10
-40°C 3.3 V
0 25°C 0 12 V
150°C -10 18 V
-10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
30 30
20 20
10 10
BOP + BRP (G)
30 30
20 20
10 10
BOP + BRP (G)
0 -40°C 0 3.3 V
25°C 12 V
-10 -10
150°C 18 V
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
ICC(off) ICC(off)
8 8
7 7
6 6
5 3.3 V
Current (mA)
Current (mA)
5
-40°C
4 18 V
4
25°C
3 150°C 3
2 2
1 1
0 0
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
ICC(on) ICC(on)
8 8
7 7
6 6
5
Current (mA)
5
Current (mA)
-40°C
4 4 3.3 V
25°C
18 V
3 150°C 3
2 2
1 1
0 0
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
400
Vsat (mV)
300 Ch. A
Ch. B
200
100
0
-50 0 50 100 150 200
Temperature (°C)
20 20
BOP BOP
Switchpoint (G)
Switchpoint (G)
10 10 3.3 V
-40°C
0 0 12 V
BRP 25°C BRP
18 V
-10 150°C -10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
20 20
BOP BOP
Switchpoint (G)
Switchpoint (G)
10 10 3.3 V
-40°C
0 BRP 25°C 0 BRP 12 V
150°C 18 V
-10 -10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
Temperature (°C)
VCC (V)
25 25
BOP - BRP (G)
BOP - BRP (G)
20 20
-40°C 3.3 V
15 25°C 15 12 V
150°C 10 18 V
10
5
5
0
0 -50 0 50 100 150 200
0 5 10 15 20
VCC (V) Temperature (°C)
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
20 20
Ch. A - Ch. B (G)
Ch. A - Ch. B (G)
10 10
-40°C 3.3 V
0 25°C 0 12 V
150°C -10 18 V
-10
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
30 30
20 20
10 10
BOP + BRP (G)
30 30
20 20
10 10
BOP + BRP (G)
0 -40°C 0 3.3 V
25°C 12 V
-10 -10
150°C 18 V
-20 -20
-30 -30
0 5 10 15 20 -50 0 50 100 150 200
VCC (V) Temperature (°C)
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