AON6970

30V Dual Asymmetric N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology Q1 Q2

• Very Low RDS(on) at 4.5VGS VDS 30V 30V
• Low Gate Charge ID (at VGS=10V) 58A 85A
• High Current Capability
RDS(ON) (at VGS=10V) <5.4mΩ <1.5mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=4.5V) <8.5mΩ <2.3mΩ

100% UIS Tested

Application 100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

Top View Bottom View

DFN5X6D
Top View Bottom View
G2
S2 PHASE
S2 D1 S1/D2
S2 PHASE PIN1
S1/D2

(S1/D2)
D1
G1
D1
D1
D1
Q2: SRFETTM
PIN1 Soft Recovery MOSFET:
Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TC=25°C 58 85
ID
Current TC=100°C 36 66 A
Pulsed Drain Current C IDM 135 340
Continuous Drain TA=25°C 24 42
IDSM A
Current TA=70°C 19 33
C
Avalanche Current IAS 35 65 A
Avalanche Energy L=0.05mH C EAS 31 106 mJ
VDS Spike 100ns VSPIKE 36 36 V
TC=25°C 31 78
PD W
Power Dissipation B TC=100°C 12 31
TA=25°C 5 4.1
A
PDSM W
Power Dissipation TA=70°C 3.2 2.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 25 30 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 50 56 60 67 °C/W
Maximum Junction-to-Case Steady-State RθJC 3.3 1.2 4 1.6 °C/W

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 AON6970

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.3 V
VGS=10V, ID=20A 4.4 5.4
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.8 8.3
VGS=4.5V, ID=20A 6.7 8.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 80 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 35 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1171 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 284 pF
Crss Reverse Transfer Capacitance 59 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.6 0.9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 17 23 nC
Qg(4.5V) Total Gate Charge 8 11 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 4.7 nC
Qgd Gate Drain Charge 2 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 15.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 2.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12.3 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 22.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : Sep 2012 www.aosmd.com Page 2 of 10

 AON6970

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V 4.5V VDS=5V
6V 4V
80 80

60 3.5V 60
ID (A)

ID(A)
125°C
40 40
25°C
VGS=3.0V
20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.8
Normalized On-Resistance
VGS=10V
8 VGS=4.5V 1.6 ID=20A
Ω)
RDS(ON) (mΩ

6 1.4

4 1.2
VGS=10V VGS=4.5V
ID=20A
2 1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

14 1.0E+02
ID=20A
ID=11.5A
12 1.0E+01

10 1.0E+00
125°C
Ω)

125°C
RDS(ON) (mΩ

8 1.0E-01
IS (A)

6 125°C 1.0E-02
25°C
4 1.0E-03

25°C 1.0E-04
2
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6970

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1600
VDS=15V
ID=20A 1400
8 Ciss
1200

Capacitance (pF)
1000
VGS (Volts)

6
800
4 600
Coss
400
2
Crss
200

0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
TC=25°C
100.0 160
RDS(ON) 10µs
limited
Power (W)

100us
ID (Amps)

10.0 120
DC 1ms
1.0 10ms 80

0.1 TJ(Max)=150°C 40
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=4°C/W
1

0.1
PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6970

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 70

60
Power Dissipation (W)

Current rating ID(A)

30
50

40
20
30

20
10
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°
°C)
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01
Ton
Single Pulse T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6970

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.3 V
VGS=10V, ID=20A 1.2 1.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 1.6 2
VGS=4.5V, ID=20A 1.8 2.3 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 100 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.46 0.6 V
IS Maximum Body-Diode Continuous CurrentG 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3973 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 1100 pF
Crss Reverse Transfer Capacitance 134 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 60 85 nC
Qg(4.5V) Total Gate Charge 27 38 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 12 nC
Qgd Gate Drain Charge 10 nC
tD(on) Turn-On DelayTime 11.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 16 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 38 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20.8 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 60 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : Sep 2012 www.aosmd.com Page 6 of 10

 AON6970

100 100
3.5V VDS=5V

80 4V 80
10V 3V
60 60
ID (A)

125°C

ID(A)
40 40 25°C

20 20
VGS=2.5V

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

3 1.8

Normalized On-Resistance
2.5 VGS=10V
1.6
VGS=4.5V ID=20A
2
Ω)
RDS(ON) (mΩ

1.4
1.5
1.2
1
VGS=4.5V
VGS=10V 1 ID=20A
0.5

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

4 1.0E+02
ID=20A
1.0E+01 125°C
3
1.0E+00
Ω)
RDS(ON) (mΩ

IS (A)

125°C 1.0E-01
2 25°C
1.0E-02

1 1.0E-03
25°C
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-04

0
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
(Note E) Figure 6: Body-Diode Characteristics (Note E)

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 AON6970

10 6000
VDS=15V
ID=20A
5000
8
Ciss

Capacitance (pF)
4000
VGS (Volts)

6
3000
4
2000
Coss
2
1000
Crss

0 0
0 10 20 30 40 50 60 70 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
10µs TJ(Max)=150°C
100µs TC=25°C
100.0 400
1ms
RDS(ON)
ID (Amps)

10.0
Power (W)

limited
300
DC 10ms

1.0 200

0.1
TJ(Max)=150°C 100
TC=25°C
0.0
0.01 0.1 1 10 100 0
0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-Case
Operating Area (Note F)
(Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=1.6°C/W
1

0.1 PD

Single Pulse
Ton
T
Q2-CHANNEL:
0.01 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6970

100 100

80 80
Power Dissipation (W)

Current rating ID(A)

60 60

40 40

20 20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°
°C) TCASE (°
°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=67°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6970

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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