AON7752

30V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V

• Integrated Schottky Diode (SRFET) ID (at VGS=10V) 16A
• Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) < 8.2mΩ
• Low Gate Charge
RDS(ON) (at VGS = 4.5V) < 14.5mΩ
• High Current Capability
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

• DC/DC Converters in Computing, Servers, and POL 100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial

DFN 3x3 EP D
Top View Bottom View Top View

SRFETTM
1 8
Soft Recovery MOSFET:
2 7 Integrated Schottky Diode
3 6

4 5 G

Pin 1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 16
ID
CurrentG TC=100°C 12 A
Pulsed Drain Current C IDM 64
Continuous Drain TA=25°C 15
IDSM A
Current TA=70°C 12
C
Avalanche Current IAS 22 A
Avalanche energy L=0.05mH C EAS 12 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 20
PD W
Power Dissipation B TC=100°C 8.3
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 5 6 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 2 2.5 V
VGS=10V, ID=16A 6.8 8.2
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 9.8 12
VGS=4.5V, ID=10A 11.6 14.5 mΩ
gFS Forward Transconductance VDS=5V, ID=16A 62 S
VSD Diode Forward Voltage IS=0.2A,VGS=0V 0.45 0.65 V
IS Maximum Body-Diode Continuous CurrentG 16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 605 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 275 pF
Crss Reverse Transfer Capacitance 36.5 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 15 nC
Qg(4.5V) Total Gate Charge 5.5 8 nC
VGS=10V, VDS=15V, ID=16A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 2.6 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.9Ω, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=16A, dI/dt=500A/µs 11.5 ns
Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs 12.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V
5V 4.5V VDS=5V

60 60
7V 4V
ID (A)

ID(A)
40 40
3.5V

125°C
20 20
25°C
VGS=3.0V

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

1.6
14
VGS=4.5V Normalized On-Resistance
12 VGS=10V
1.4 ID=16A
10
Ω)
RDS(ON) (mΩ

8
1.2
6

4 VGS=10V
1 VGS=4.5V
ID=10A
2

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

25 1.0E+01
ID=16A
1.0E+00 125°C
20
40
1.0E-01
Ω)

15
RDS(ON) (mΩ

IS (A)

125°C
1.0E-02
10 25°C
1.0E-03

5 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000

VDS=15V
8 ID=16A 800
Ciss

Capacitance (pF)
VGS (Volts)

6 600

4 400

Coss
2 200

Crss
0 0
0 5 10 15 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 160 TJ(Max)=150°C

10µs TC=25°C
RDS(ON)
ID (Amps)

Power (W)

10.0
100µs 120 17
DC
1ms
5
1.0 10ms 80 2
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=6°C/W 40
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20

20
Power Dissipation (W)

15

Current rating ID(A)

15

10
10

5 5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

100.0
10000
IAR (A) Peak Avalanche Current

TA=25°C TA=25°C
TA=100°C 1000
Power (W)

10.0 TA=150°C 100

10
TA=125°C

1.0 1
1 10 100 1000 1E-05 0.001 0.1 10 1000
µs)
Time in avalanche, tA (µ Pulse Width (s)
Figure 14: Single Pulse Avalanche capability (Note Figure 15: Single Pulse Power Rating Junction-to-Ambient
C) (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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