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Intgroduction to
PN Junctions I:
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu
2
Lundstrom ECE 305 S16
ECE 305: Spring 2016: Exam 2
10
9
Out of 75 points:
8
7 N: 22
6 Mean: 74.8% (56.1/75)
C ount
5
4
SD: 17.5%
3 Min: 26.7%
2
Max: 96%
1
0
Median: 80.7% (60.5/75)
20 30 40 50 60 70 80 90 100
E X A M 2 P erc en t %
N P
n0 ! N D p0 ! N A
ρ!0 ρ!0
!
( )
0 = −∇i ε E + ρ equilibrium
(
ρ = q p − n + N D+ − N A− )
! ! !
E ( r ) = ∇V ( r )
N ρ>0 ρ<0 P
N D+ N A−
E
VL > VR
n0 ! N D p0 ! N A
ρ!0 - ρ!0
−xn 0 xp
transition region
EC EC
EF
V = Vbi Ei qVbi Ei V =0
EF
EV EV
EF EF
1) Begin with EF
2) Draw the E-bands where you know the carrier density
3) Electrostatic potential by flipping E-band upside down.
4) E-field from slope
5) n(x), p(x) from the E-band diagram
6) rho(x) from n(x) and p(x)
7) diffusion current from (5) or from (6)
EC ( x ) = EC − ref − qV ( x )
1
E ( x ) = dEC ( x ) dx
q
9
Lundstrom ECE 305 S16
energy band diagram
EC
EF
Ei
EV
x
x = −xn x=0 x = xp
10
Lundstrom ECE 305 S16
“read” the e-band diagram
N P
V
Vbi
−xn xp x
N ρ>0 ρ<0 P
N D+ N A−
E
VL > VR
n0 ! N D p0 ! N A
ρ!0 - ρ!0
−xn 0 xp
transition region
N P
−xn xp x
N ρ>0 ρ<0 P
N D+ N A−
E
VL > VR
n0 ! N D p0 ! N A
ρ!0 - ρ!0
−xn 0 xp
transition region
log10 n ( x ) ,log10 p ( x )
n0 N = N D p0 P = N A
n0 p = ni2 N A
p0 N = ni2 N D
N P
−xn xp x
n0 N << N D p0 P << N A
N ρ>0 ρ<0 P
N D+ N A−
E
VL > VR
n0 ! N D p0 ! N A
ρ!0 - ρ!0
−xn 0 xp
transition region
qN D
N P
xp
−xn x
−qN A
N ρ>0 ρ<0 P
N D+ N A−
E
VL > VR
n0 ! N D p0 ! N A
ρ!0 - ρ!0
−xn 0 xp
transition region
kBT ⎛ N D N A ⎞
Vbi = ln ⎜
q ⎝ ni2 ⎟⎠
20
NP junction electrostatics