ECE-305: Spring 2016

Carrier Action: I
Pierret, Semiconductor Device Fundamentals (SDF)
pp. 75-89

Professor Mark Lundstrom

Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu

Lundstrom ECE 305 S16

2/2/16
 Exam 1 results

7
Out of 75 points:
6

5 N: 22
4 Mean: 88.7% (66.5/75)
C ount

3 SD: 7.9%
2 Min: 68%
1 Max: 100%
0
40 45 50 55 60 65 70 75 80 85 90 95 100
Median: 90.6% (68/75)
E X A M  1  P erc en t  %

Exam 1 results will be available from Chris Ramsey in

2
Wang Hall 2080. Lundstrom ECE 305 S16
 what is hbar cubed?

( ) 2 (0.16 × 10 )
3/ 2
*
2 m n −19
3/ 2
HW 2 problem 5a): Ne =
π !
2 3
3

Ne =
(
1.414 × 1.11× 10−45 ) × 0.667 × ( 2.02 × 10 )
−30

( )
3
−34
9.87 × 1.055 × 10

1.414 × 0.667 1.11× 10−45 2.02 × 10−30 −3

Ne = × × = 1.82 × 10 26
m
9.87 × 1.055 × 10−34 1.055 × 10−34 1.055 × 10−34

(Note the order of the divisions so that my calculator

3 does not underflow.) Lundstrom ECE 305 S16
 Announcements

Exam 1 solutions have been posted

Exam 2 info:

Mon. 2/15, PHYS 112, 8:00-9:00 PM

Covers Weeks 3, 4, and 5 (HW 3, 4, and 5)

4 Lundstrom ECE 305 S16

 carrier concentration review

Intrinsic ni = N C NV e− EG /2 kBT

Extrinsic

n0 = N D+ = N D
Freeze out p0 = ni2 n0

5
Fig. 2.22 from R.F. Pierret, Semiconductor Device Fundamentals
 key equations in equilibrium

n0 = N C e( EF −EC ) kBT n0 = ni e( EF −Ei ) kBT

p − n + N D+ − N A− = 0
p0 = NV e( EV −EF ) kBT p0 = ni e( Ei −EF ) kBT

( ) ⎤⎥ n0 p0 = ni2
3/2
⎡ mkT *

NC = 2 ⎢
n B

⎢⎣ 2π ! 2
⎥⎦ 1
f0 ( E ) =
ni = N C NV e− EG /2 kB T 1+ e( E−EF ) kBT
( ) ⎤⎥
3/2
⎡ m kT *
p B
NV = 2 ⎢
⎢⎣ 2π ! 2
⎥⎦ ni = 1.00 × 1010 cm -3

6
 Carrier concentration from doping

(N-type) (P-type)
ni2 ni2
− n + ND − NA = 0 p− + ND − NA = 0
n p

1/2
N A − N D ⎡⎛ N A − N D ⎞ ⎤
1/2 2
N D − N A ⎡⎛ N D − N A ⎞ ⎤
2

n= + ⎢⎜ ⎟ + ni ⎥
2 p= + ⎢⎜ ⎟ + ni ⎥
2

2 ⎢⎣⎝ 2 ⎠ ⎥⎦ 2 ⎢⎣⎝ 2 ⎠ ⎥⎦

ni2 ni2
p= n=
n p

Lundstrom ECE 305 S16 7

 At this point, you should be able to:

1)  Determine n and p given EF

2)  Determine EF given n and p

3)  Determine n and p given ND and NA

4)  Determine EF given ND and NA

(Must know the temperature and the semiconductor too.)

Be familiar with HW3

Lundstrom ECE 305 S16 8
 outline

1.  Current (drift)

2.  Mobility

3.  Conductivity

4.  Resistivity, etc.

Lundstrom ECE 305 S16 9

 semiconductor in equilibrium

“ideal” contacts 3
cross-sectional KE = k BT
2
area, A
L 1 * 2
KE = mn υ
2

3k BT
υ 2 = υ rms =
uniform n-type mn*
semiconductor

υ rms ≈ 107 cm/s

10
Lundstrom ECE 305 S16
 current flow

“ideal” contacts
1) random walk with a small
bias from left to right
cross-sectional
area, A
L

I
uniform n-type
semiconductor 2) assume that electrons
“drift” to the right at an
average velocity, υd
−V +
3) what is I ?

11 Lundstrom ECE 305 S16

 drift current and velocity

“ideal” contacts I = − Q tt
cross-sectional
area, A Q = −qnAL
L
tt = L υ dn

I = nqυ d A
I
n-type semiconductor
υ dnx = − µ nE x
J nx = −nqυ dnx A/cm 2

−V + J px = pqυ dnx A/cm 2

x
Lundstrom ECE 305 S16 12
 velocity and electric field

υ dn = − µ nE υ dn “high-field transport”

⎛ qτ ⎞
µn = ⎜ * ⎟ cm 2 V-s
⎝ mn ⎠
υ dn = µ n E

υ dp = + µ pE
E

⎛ qτ ⎞
µ p = ⎜ * ⎟ cm 2 V-s “low-field” or “near-equilibrium”
⎝ mp ⎠ or “linear” transport
Lundstrom ECE 305 S16 13
 velocity vs. field

from R.F. Pierret, Semiconductor Device Fundamentals, Fig. 3.4

14
 drift current

υ dnx = − µ nE x

υ dpx = + µ pE x
J nx = nq µnE x A/cm 2

J nx = −nqυ dnx A/cm 2 J px = pq µ pE x A/cm 2

J px = pqυ dpx A/cm 2

15 Lundstrom ECE 305 S16

 mobility vs. doping

⎛ qτ ⎞
µ = ⎜ * ⎟ cm 2 V-s
⎝m ⎠

from R.F. Pierret, Semiconductor Device Fundamentals, Fig. 3.5 (a)

16
 mobility vs. temperature

decreasing mobility
µn suggests the
presence of lattice
scattering.

increasing mobility
suggests the
presence of charged µ n ∝ T 3/ 2
impurity scattering µ n ∝ T −3/ 2

⎛ qτ ⎞
µ = ⎜ * ⎟ cm 2 V-s
⎝m ⎠
17 Lundstrom ECE 305 S16
T
 re-cap

J n = −nqυ dn A/cm 2 υ dn = − µ nE dV
E =− V/cm
dx
J p = + pqυ dp A/cm 2 υ dp = + µ pE V
E =− V/cm
L
L

I
n-type semiconductor
υ dnx = − µ nE x

−V +
18 x
 outline

1.  Current (drift) ✓

2.  Mobility ✓
3.  Conductivity

4.  Resistivity, etc.

Lundstrom ECE 305 S16 19

 current, conductivity, resistivity

J nx = nq µnE x A/cm 2 J nx = σ nE x A/cm 2 (

σ n = nq µ n units? )
J px = pq µ pE x A/cm 2 J px = σ pE x A/cm 2 σ p = pq µ p

( )
J x = J nx + J px = σ n + σ p E x = σE x A/cm 2

1
J x = σE x A/cm 2 Ex= J x = ρ J x V/cm
σ

1 1 1
ρ= = = Ω-cm
σ σ n + σ p nqµn + pqµ p
20
 resistivity vs. doping density

1
ρ= Ω-cm
nqµ n + pqµ p

21 from R.F. Pierret, Semiconductor Device Fundamentals, Fig. 3.8

 resistance

L
J n = σ nE A/cm 2

I I = − AJ n = σ n AE Amps
n-type semiconductor
υ d = − µ nE x
V
I = σnA
L
−V +
⎛ A⎞ 1
I = ⎜ σ n ⎟ V = GV = V
⎝ L⎠ R
L
R = ρn
A

22 Lundstrom ECE 305 S16

 outline

1.  Current (drift) ✓

2.  Mobility ✓
3.  Conductivity ✓
4.  Resistivity, etc. ✓

Lundstrom ECE 305 S16 23