ECE-305: Spring 2016

Depletion Approximation
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu

Pierret, Semiconductor Device Fundamentals (SDF)

pp. 576-580
Lundstrom ECE 305 F16
3/31/16
Outline: MOS electrostatics

1)  E-band approach

2)  Depletion approximation

Lundstrom ECE 305 F16 2

 band banding in an MOS device

VG′ = 0 VG′ < 0 0 < VG′ < VT VG′ > VT′

Flat band Accumulation Depletion Inversion

3 Fig. 16.6, Semiconductor Device Fundamentals, R.F. Pierret
 e-band diagram

dE ρ ( x)
constant =
dx K S ε 0
electric field
EC

Ei
EF
EV

gate
VG′ > 0 monotonically
decreasing electric
4
field
electric field vs. position

E ( x)

E ox ES

???
φ=0

−xox 0 x

5
Lundstrom ECE 305 S16
 E-field in the oxide

Dox = DS
ΔVOX
K ox ε 0E ox = K S ε 0E S E S = E (0+ )
KS EC
E ox = ES
K OX ΔVS
E ox
E ox ≈ 3E S Ei
EF
EV

gate What does the potential

vs. position look like?
VG′ > 0 6
 potential vs. position

φ ( x)
φS > 0
VG′ = ΔVox + ΔVS

φ=0

−xox 0 x

7 Lundstrom ECE 305 S16

 from the e-band diagram: charge density

EC

Ei
EF
EV

gate
VG′ > 0
8
space charge density vs. position

ρ ( x)

−xox 0 x

−qN A

depletion charge
Lundstrom ECE 305 S16 9
 MOS electrostatics: depletion
0 < φS < 2φ F

Given the surface

φ ( x) φ (0)
potential: φ S
EC

E S (φS ) Ei
φF
EF
W (φS )
EV
QS (φS ) = −qN AW (φS ) Si
W
What gate voltage x
produced this surface
potential?
Depletion approximation for the charge
10 in the semiconductor.
Outline: MOS electrostatics

1)  E-band approach

2)  Depletion approximation

Lundstrom ECE 305 F16 11

 space charge density vs. position

dE ρ qN A
= =−
ρ ( x) dx K S ε 0 K Sε 0

W E =0
0
−xox x

−qN A

depletion charge
12
Lundstrom ECE 305 F16
 electric field (semiconductor)

E ( x)
ES

ES =?
x
W

1
1) E SW = φS
2
13
Lundstrom ECE 305 F16
 surface electric field (semiconductor)
dE
=−
qN A E ( x)
dx K Sε 0
ES
qN A
dE = − dx P
K Sε 0
E (0) 0
qN A
∫ dE = − ∫
K Sε 0 W
dx
E (W ) x
W
qN AW
E (0) =E S =
K Sε 0 1
1) E SW = φS
2
qN AW
2) E S =
K Sε 0
14
 final answers (depletion)

E ( x)
2κ S ε 0φS qN A
W= cm ES= W
qN A κ Sε 0
ES
1
E SW = φS
2qN AφS 2
P
ES= V/cm
κ sε 0

QB = −qN AW (φS ) C/cm 2

W x
QB (φS ) = − 2qκ sε 0 N AφS C/cm 2
What gate voltage
0 < φS < 2φF produced this surface
potential? 15