ECE-­‐305:    Key  Equations  (for  exam  4)  

Spring  2016,  Alam  and  Lundstrom,  Purdue  University  
 
Physical  constants:         Silicon  parameters  (T  =  300K)  
 = 1.055 × 10 −34
[ J-s ]       N C = 3.23× 1019 cm -3    
m0 = 9.109 × 10 −31 [ kg ]       NV = 1.83× 1019 cm -3  
k B = 1.380 × 10 −23 [ J/K ]       ni = 1× 1010 cm -3  
q = 1.602 × 10 −19 [C]       K S = 11.8
 
ε 0 = 8.854 × 10−12 [F/m]         k BT q = 0.026 eV  (300  K)  

(m ) 2 ( E − EC )
3/2
*

DOS:   gC ( E) =
π !
n
2 3
       FF:     f ( E ) =
1
( E−EF ) kBT
ni = N C NV e− EG /2 kBT  
  1+ e  
Equilibrium  Carrier  densities:    
3/2
1 ⎛ 2m*k T ⎞
n0 = N C e( F C ) n0 = ni e( EF − Ei ) kBT  
E −E k BT
   m-­‐3   N C = ⎜ n 2B ⎟ m-­‐3  
4 ⎝ π! ⎠
3/2
1 ⎛ 2mp k BT ⎞
*

p0 = NV e( V F ) p0 = ni e( Ei − EF ) kBT  
E −E k BT
   m-­‐3   NV = ⎜ ⎟ m-­‐3  
4 ⎝ π !2 ⎠
 
Space  charge  neutrality:     p − n + N D+ − N A− = 0   Law  of  Mass  Action:     n0 p0 = ni2    
Conductivity  and  resistivity:     σ = σ n + σ p = q nµ n + pµ p = 1 ρ   ( ) ( )
dFn dn
Current  equations:     J n = nµ n     J n = nqµ nE x + qDn   Dn µ n = k BT q  
dx dx
dF dp
J p = pµ p p     J p = pqµ pE x − qD p   D p µ p = k BT q
    dx dx  
Recombination:  SRH:     R = Δn τ n m s   or -­‐3 -­‐1     R = Δp τ p   m s -­‐3 -­‐1  

   
Semiconductor  Equations:  

∂n ⎛ Jn ⎞
= −∇ i ⎜ ⎟ + Gn − Rn         Minority  Carrier  Diffusion  Equation:  
∂t ⎝ −q ⎠

∂p ⎛ Jp ⎞ ∂ Δp ∂ 2 Δp Δp
= −∇ i ⎜ ⎟ + G p − Rp         = Dp − + GL  
∂t ⎝ q⎠ ∂t ∂x 2 τ p

( )
0 = −∇ i ε E + ρ
         
Lp = D pτ p
 
 
Carrier  densities  and  QFL’s:    
n = N e( n C ) B     n = n e( Fn − Ei ) kBT  
F −E k T
C
  i

p = NV e
(EV − Fp ) k BT
        p = ni e( i p ) B  
E −F k T

ECE-­‐305     1   Spring  2016  

      

PN  junction  electrostatics:  
 
kBT ⎛ N D N A ⎞ dE ρ ( x)
Vbi = ln ⎜ =
q ⎝ ni2 ⎟⎠   dx K S ε 0  
 
1/2
⎡ 2K ε ⎛ N + N D ⎞ ⎤ NA ND 2qVbi ⎛ N D N A ⎞
W =⎢ S 0⎜ A ⎟ Vbi ⎥ xn = W xp = W E (0) =
⎣ q ⎝ N D N A ⎠ ⎦   N A + N D   N A + N D     K sε 0 ⎜⎝ N A + N D ⎟⎠  
 
Diode  Current:  
n2 ni2 qVA
Δn ( 0 ) = i ( eqVA kBT − 1) Δp ( 0 ) = (e kBT
− 1)
NA   ND  
⎛ D n2 D n2 ⎞ ⎛ D n2 D n2 ⎞
I D = I 0 ( eqVA /kBT − 1)                 I 0 = qA ⎜ n i + p i ⎟    (long)     I 0 = qA ⎜ n i + p i ⎟    (short)  
⎝ Ln N A L p N D ⎠ ⎝ WP N A Wn N D ⎠

( )
non-­‐ideal   I D = I 0 eq(V −IRS )/nkBT − 1         I gen = −qA i W  
n
2τ 0
 
I +I K Sε 0 A
small  signal:     Gd = D 0     C J (VR ) = 1/2   C D = Gd τ n  
kBT q ⎡ 2K S ε 0 ⎤
⎢ qN (Vbi − VA ) ⎥
⎣ A ⎦
 
 
MS  Diodes:     qVbi = Φ M − Φ S     Φ BP = χ + EG − Φ M   Φ BN = Φ M − χ  
 
4π qm *kB2
J = J 0 ( eqVA /kBT − 1)   J 0 = A*T 2 e− Φ B kBT   A* =  
h3
 

ECE-­‐305     2   Spring  2016