MSE3025 반도체소자 학번:

Final exam (2020) 이름:

Physical Constants and conversion Factors

Avogadro’s Number NA=6.02•1023 molecules/mole
Boltzmann’s Constant k =1.38•10-23 J/K
=8.62•10-5eV/K
Electronic Charge (magnitude) q = 1.6•10-19C
Electron rest mass m0 = 9.11•10-31 kg
Permitivity of free space ε0 = 8.85•10-14F/cm

Plank’s Constant h = 6.63•10-34 J-sec

= 4.14 •10-15 eV-sec
Room Temperature value of kT kT = 0.0259eV
Speed of Light c = 2.998•1010 cm/sec

1Å (angstrom) = 10-8cm
1μm = 10-4cm
1eV=1.6•10-19J
Intrinsic Carrier Concentration at 300K for:
Si = 1.5•1010cm-3
Ge = 2.5•1013cm-3
GaAs = 2•106cm-3

Relative Permitivity of SiO2 εr, SiO2 = 3.9 Electron affinity of Si qχSi = 4.05eV

Information on Common Semiconductors

(All values are for 300K)

Semiconductor Eg (eV) a (Å) Density of States Conductivity εr
Effective Mass Effective Mass
* *
m n/m0, m p/m0 m*n/m0, m*p/m0
Si 1.11 5.43 1.1, 0.56 0.26, 0.49 11.8
Ge 0.67 5.65 0.735, 0.28 0.12, 0.28 16
AlAs 2.16 5.66 2.0, 0.76 Same 10.9
GaAs 1.43 5.65 0.067, 0.5 Same 13.2
InP 1.35 5.87 0.077, 0.85 Same 12.4
InAs 0.36 6.06 0.023, 0.41 Same 14.6

1
MSE3025 반도체소자 학번:
Final exam (2020) 이름:

Equations for Mid term Exam

Fermi Function
1
f (E) =
1 + exp[( E − E F ) / kT ]

Carrier Concentrations

n0 =  f ( E ) N ( E )dE  N
EC
c f ( Ec )  N c exp[ −( E c − E f ) / kT ]

EV

p0 =  N ( E )(1 − f ( E ))dE  N

V [1 − f ( EC )]  NV exp[ −( E f − EV ) / kT ]

3/ 2
 2mn*, p kT 
N C ,V = 2 
 h2 
 

n0 = ni exp[( E F − Ei ) / kT ]
p0 = ni exp[( Ei − E F ) / kT ]

n0 p0 = ni
2

ni = N C NV exp[ − Eg / 2kT ]
 2kT 
 
3/ 2

ni (T ) = 2 2  (mn* m*p ) 3 / 4 exp − E g / 2kT

 h 
 − Eg  T − 300 
3/ 2
 T 
= ni (300 K )   exp   
 300   2k  300 T 
n0 + N A− = p0 + N D+

2
MSE3025 반도체소자 학번:
Final exam (2020) 이름:

Carrier Motion in External Fields

J = E
 = q(n0 n + p0  p )
1
=

Hall measurement
z

Bz
y
x

Ey
L
t Ex

1 1 RH
RH = RH = − =
qp0 or qn0 

If the carriers are hole, Ey=(Jx/qp0)Bz = RHJxBz

Haynes-Shockley Experiment

L  = vd (x) 2 (tL) 2
vd =
td
p
E D p = 16t = 16t 3 (x = tvd )
d d

3
MSE3025 반도체소자 학번:
Final exam (2020) 이름:

PN junction
kT p p kT N a N d
V0 = ln = ln 2
q pn q ni

1/ 2 1/ 2
 2V0  1 1   2 (V0 − V )  1 1 
W =  +  (equilibrium), W =   +  (with bias)
 q  N a N d   q  N a N d 
Na Nd
xn0 = W , xp0 = W
Na + Nd Na + Nd

 Dp  qV
p n + n n p  e kT − 1 = I 0  e kT − 1
D qV
I = qA
L Ln    
 p 

1/ 2
 q Nd Na  A
C j = A  =
 2 (V0 − V ) N d + N a  W

JFET
1/ 2
 2 (V − VGD ) 
W = S 0 
 qN a  , if not ignoring V0

V 2  VG 
3/ 2
2  VD − VG  
3/ 2

I D = G0VP  +  −  − 
D
  Linear region G0 = 2aZ / L
 VP 3  VP  3  VP  


MOSFET
1/ 2
 2  
W = S S
 qN a 

Qi Qd
VT =  m s − − + 2 F (Assuming all oxide charges are located at the interface)
Ci Ci

 
 n Ci (VG − VT )VD − VD 2  Linear region
Z 1
ID =
L  2 

4
MSE3025 반도체소자 학번:
Final exam (2020) 이름: