18ECE302T-MEMS Technology

Unit-2, Lecture-10: Conductivity of semiconductors and Miller indices

Dr. Md Jawaid Alam

mdjawaia@ssrmist.edu.in

Department of ECE
SRM Institute of Science and Technology
Kattankulathur, Chennai

February 9, 2023
Conductivity of a semiconductor

Conductivity of a semiconductor (σ) de- ni depends on the material bandgap

pends on.......? (Eg ), effective mass of electron and holes
(m∗n , m∗p ), and temperature(T ):
Do you remember the equation:
! 32
σ = nµn + pµ p (1) 4π2 m∗n m p ∗ k2 T 2 −Eg
n2i =4 e kT (3)
h2
So conductivity depends on carrier concen-
tration (n or p) and mobility(µ) I will come to the mobility (µ) factor a little
later.
On what factors the carrier concentration
(n or p) depends? In doped semiconductor, specially when net
doping level is close to ni , one should be
np = n2i (2) careful about the charge neutrality of the
material.
Okay, on what factors ni depends?

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 1 / 10

Charge neutrality in doped semiconductor

Let us assume that a semiconductor is Solving these equations simultaneously

doped with ND donor atoms and NA accep- gives:
tor atoms per cm3 . s
If each donor(acceptor) atoms give one ND − NA (ND − NA )2
n0 = + + n2i (6)
electron(hole) then there will also be 2 4
ND+ (NA− ) kernel atoms per cm3 in the semi- s
conductor. NA − ND (NA − ND )2
p0 = + + n2i (7)
For charge neutrality in semiconductor: 2 4

p0 + ND+ = n0 + NA− (4) Note that if ND −NA >> ni then n0 = ND −NA

along with the condition:

n0 p0 = n2i (5)

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 2 / 10

n and p using Fermi level position and vice versa

CB
In doped semiconductors: EC
( EC − E F )
EF
−Eg (E F − E f i )
n0 p0 = n2i = Nc Nv × e kT (8) Efi

Where: EV
! 32 VB
2πm∗n kT
Nc = 2 (9)
h2 −(E F −EV )
p0 = Nv e kT (12)
! 32
2πm∗p kT
Nv = 2 (10) Using equation (8) we can also write:
h2
(EF −E f i )
The carrier concentrations n0 and p0 can be n0 = ni e kT (13)
written in terms of Nc and Nv as:
(
− E F −E f i )
−(EC −E F ) p0 = ni e kT (14)
n0 = Nc e kT (11)
Note n0 p0 = n2i is always satisfied
Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 3 / 10
Electron and hole mobility (µn and µ p )

Qualitatively mobility represents the ease of

a free carrier to move in a crystal/material
Quantitatively Mobility is defined as

∂vd contents...
µ= (15)
∂E
vd = µE (16)
where, vd is drift velocity and E is electric
field.

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 4 / 10

 Resistivity of a semiconductor
contents... contents...

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 5 / 10

The Miller Indices

Miller indices are commonly use to describe

the faces of crystalline materials If we represent the plane equation as hx +
ky + lz = 1, then
1 1 1
h= ; k= ; l= (18)
a b c
Miller indices involve:
1 (hkm) = designation of a “face”, or a
plane
2 < hkl > = designation of a direc-
A plane intersects x, y and z-coordinates at tion that is perpendicular to the (hkm)
a, b and c. Then point on the plane located plane.
at P(x,y,z) will satisfy the equation
In a cubic crystal, such as silicon, a = b =
x y z
+ + =1 (17) c=1
a b c
Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 6 / 10
Single Silicon Crystal Structure
Single silicon crystals are basically of “face-cubic-center” (FCC).
The crystal structure of a typical FCC crystal is shown below:

Note: Total number of atoms: 8 at corners and 6 at faces = 14 atoms

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 7 / 10
Single Silicon Crystal Structure-Cont..

Single crystal silicon, however has 4 extra atoms in the interior.

The situation is like to merge two FCC crystals together as shown below:

Total no. of atoms in a single silicon crystal = 18

The unsymmetrical distribution of atoms within the crystal make pure silicon anisotropic in its
mechanical properties.

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 8 / 10

The 3 Distinct Planes of a Cubic Crystal

Characteristics of silicon by principal

planes:
1 The (100) planes contain least num-
ber of atoms =⇒ the weakest plane
=⇒ easiest to work with.
2 The (110) planes offers the cleanest
Now if we compare: surfaces in micro fabrications.
3 The (111) contains shortest bonds be-
tween atoms =⇒ strongest plane
=⇒ toughest to work with.
using geometry you can find angle between
two plane.
Angle between (100) plane and (111) plane
is 54.7◦ .
Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 9 / 10
 wafer identification, different wafer properties
contents... contents...

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology February 9, 2023 10 / 10