18ECE302T-U1-L4, L5 Scaling and Photolithography

18ECE302T-MEMS Technology
Unit-1, Lecture-4-5: Sacling, Bulk and Surface Micromachining
Dr. Md Jawaid Alam

mdjawaia@ssrmist.edu.in
Department of ECE
SRM Institute of Science and Technology
Kattankulathur, Chennai
January 25, 2023

Unit-I
MEMS
plating,
Devel-
spin-on
opment
History, Charact.
CVD: Thin film MEMS fab- Miniatur- of
LPCVD, MEMS –
deposition rication ization and
PECVD Miniatur-
scaling ization
sputtering,
evapo- Scaling
ration
Micro
Photo- Bulk and
fabrication
lithography Surface
process
Microma-
chining
EBL
Isotropic Silicon
wet based
etching MEMS
Optical
pro-
cesses
Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 1 / 25

Scaling Laws in Miniaturization
One would intuitively simply scale down the

size of all components to a device to make
it small.


it small.
Unfortunately, the reality does not work out
that way.


it small.
that way.
There are serious physical consequences
of scaling down many physical quantities.


it small.
that way.
The scaling laws will make engineers aware
of both positive and negative physical con-
sequences of scaling down machines and
devices.

One can understand scaling laws in different con-
text like:
it small.
that way.
devices.

text like:
it small. Scaling in Geometry
that way.
devices.

text like:
Unfortunately, the reality does not work out Scaling in Rigid-Body Dynamics
that way.
devices.

text like:
that way.
Scaling in Electrostatic Forces
devices.

text like:
that way.
Scaling in Electromagnetic Forces
devices.

text like:
that way.
Scaling in Electricity
devices.

text like:
that way.
of both positive and negative physical con- Scaling in Fluid Mechanics
devices.

text like:
that way.
of both positive and negative physical con- Scaling in Fluid Mechanics
Scaling in Heat Transfer
devices.

Scaling in Geometry
Volume (V) and surface (S) are two physical

parameters that are frequently involved in
machine design.

Scaling in Geometry

machine design.
Volume leads to the mass and weight of de-
vice components.

Scaling in Geometry

machine design.
vice components.
Volume relates to both mechanical and
thermal inertia. Thermal inertia is a mea-
sure on how fast we can heat or cool a solid.
It is an important parameter in the design of
a thermally actuated device.

Scaling in Geometry

machine design.
vice components.
Volume relates to both mechanical and
Surface is related to pressure, buoyant
forces, reaction rate, sensitivity in gas sens-
ing, fluid mechanics etc.

Scaling in Geometry

machine design.
When the physical quantity is to be minia-
vice components.
turized, the design engineer must weigh the
Volume relates to both mechanical and magnitudes of the possible consequences
from the reduction on both the volume and
surface of the particular device.
Surface is related to pressure, buoyant
forces, reaction rate, sensitivity in gas sens-
ing, fluid mechanics etc.

Scaling in Geometry Cont...
Surface to volume ratio is one of the important
parameter in MEMS application.

V = l3
S = l2

V = l3 S
V = l−1
S = l2

V = l3 S
V = l−1
S = l2
Volume, V relates to mass and surface

area, S relates to buoyancy force:

V = l3 S
V = l−1
S = l2

Higher S
V ratio =⇒ better chance to fly.

V = l3 S
V = l−1
S = l2

Higher S

V = l3 S
V = l−1
S = l2

Higher S
S
V = 10−4 /mm

V = l3 S
V = l−1
S = l2

Higher S
S
V = 10−4 /mm
S
V = 10−1 /mm
Surface to volume ratio is one of the important Example on scaling law in geometry: What
parameter in MEMS application. would happen to the required torque to turn
a micro mirror with a 10 times reduction in all
V = l3 dimensions?
S
V = l−1
S = l2 Solution:

Higher S
S
V = 10−4 /mm
S
V = 10−1 /mm
V = l3 dimensions?
S
V = l−1
S = l2 Solution:

Higher S
S
V = 10−4 /mm
S
V = 10−1 /mm
V = l3 dimensions?
S
V = l−1
S = l2 Solution:
Torque required to
turn the mirror:
Volume, V relates to mass and surface τ ∝ Iyy .
area, S relates to buoyancy force: Iyy = 12
1
Mc2 =
12 ρbc t
1 3
Higher S
ratio =⇒ better chance to fly.
V So, 10 times
scaling down in all
aspects will result
into 104 times
S
V = 10−4 /mm
reduction in
required torque!!
S
V = 10−1 /mm
Scaling in Rigid-Body Dynamics
Forces are required to make parts to move

such as in the case of micro actuators.


Power is the source for the generation of
forces.


forces.
An engineer needs to resolve the following

issues when dealing with the design of a
dynamics system such as an actuator :


forces.

1 The required force to move a part


forces.

2 How fast the desired movements can
be achieved


forces.

be achieved
3 How readily a moving part can be
stopped.


forces.

be achieved
stopped.
All these depends on inertia.

Forces are required to make parts to move One needs to understand the effect of
such as in the case of micro actuators. scaling in the size on power (P), force (F)
or pressure (p), and the time (t) required to
deliver the motion.
forces.

be achieved
stopped.

deliver the motion.
forces.
For example F = Ma = 2sM t2
, where
s = ut + 12 at2 with u = 0.
be achieved
stopped.

deliver the motion.
forces.
, where
s = ut + 12 at2 with u = 0.
dynamics system such as an actuator : Thus, the scaling of dynamic force, F is:
F ∝ L4 t−2 .
be achieved
stopped.

deliver the motion.
forces.
, where
s = ut + 12 at2 with u = 0.
F ∝ L4 t−2 .
2 How fast the desired movements can To design micromechanical actuators, it is
be achieved helpful to understand how forces scale.
stopped.

deliver the motion.
forces.
, where
s = ut + 12 at2 with u = 0.
F ∝ L4 t−2 .
2 How fast the desired movements can To design micromechanical actuators, it is
be achieved helpful to understand how forces scale.
3 How readily a moving part can be W. S. N. Trimmer used a matrix formalism
stopped. to describe the scaling laws in the article
All these depends on inertia. “Microrobots and Micromechanical
Systems” Vol-19, No-3, 1989.
Trimmer Force Scaling Vector
Force Law 1 →∝ S 1 
 
Trimmer represented size (one dimension)
Force Law 2 →∝ S 2 

of the system by a single scale variable, S , F =  (1)
S 3 

which represents the linear scale of the sys- Force Law 3 →∝
tem. Force Law 4 →∝ S4
Force scale Acceleration time Power Density

Order
F a t P/V
1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2

Force Law 1 →∝ S 1 
 
Force Law 2 →∝ S 2 

S 3 

The choice of S for a system is a bit arbi-

trary. The S could be the separation be-
tween the plates of a capacitor, or it could
be the length of one edge of the capacitor.

Order
F a t P/V
1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2

Force Law 1 →∝ S 1 
 
Force Law 2 →∝ S 2 

S 3 


Once chosen, however, it is assumed that
all dimensions of the system are equally
scaled down in size as S is decreased (iso- Force scale Acceleration time Power Density
Order
F a t P/V
metric scaling). 1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2

Force Law 1 →∝ S 1 
 
Force Law 2 →∝ S 2 

S 3 


Order
F a t P/V
2 2 -1 1 -1
There are many physical laws when force 3 3 0 0.5 0.5
4 4 1 0 2
can be proportional to different order of the
dimensions.
Force Law 1 →∝ S 1 
 
Force Law 2 →∝ S 2 

S 3 


Order
F a t P/V
2 2 -1 1 -1
4 4 1 0 2
dimensions.
Force Law 1 →∝ S 1 
 
Force Law 2 →∝ S 2 

S 3 


This nomenclature shows a number of dif-
ferent force laws in a single equation. Equa-
tion (5) shows four cases for the force law.
He was able to relate this vector with other
Once chosen, however, it is assumed that pertinent parameters in dynamics as:
Order
F a t P/V
2 2 -1 1 -1
4 4 1 0 2
dimensions.
Trimmer’s Scaling Law

Order
q
F F
a= m t= 2sM Fs
P/V0 = tV
F 0
1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2


Order
q
F F
a= m t= 2sM Fs
P/V0 = tV
F 0
1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2
The first row say that when the force scales

as S 1 then acceleration a scales as S 2 , time
for actuation scales as S 1.5 and power den-
sity scales as S 2.5 .


Order
q
F F
a= m t= 2sM Fs
P/V0 = tV
F 0
1 1 -2 1.5 -2.5
2 2 -1 1 -1
3 3 0 0.5 0.5
4 4 1 0 2
The first row say that when the force scales

as S 1 then acceleration a scales as S 2 , time
for actuation scales as S 1.5 and power den-
This vertical bracket notation can be used for other scaling laws.
For example, if one had a desire the top element could refer to the
case where the force scales as S 6 . Or the top element could repre-
sent to the case where the acceleration scales as S 1 , and the sec-
ond element represent the case where the acceleration scales as
S 2 , ... .
These vertical brackets can be defined for the convenience of the prob-
lem at hand. We decide the initial definition of what each element repre-
sents.
Question: Estimate the associate changes in the
Force scale Acceleration time Power Density acceleration (a), time (t) and the power supply (P)
Order
q
F F
a= m t= 2sM Fs
P/V0 = tV
1 1 -2 1.5
F
-2.5
0 to actuate a MEMS component if its weight is re-
2 2 -1 1 -1 duced by a factor of 10.
Solution: Since W ∝ V = l3 , so it involves Order
3 3 0 0.5 0.5
4 4 1 0 2
3 scaling, from the table for scaling of dynamic
The first row say that when the force scales forces, we get:
as S 1 then acceleration a scales as S 2 , time There will be no reduction in the
for actuation scales as S 1.5 and power den- acceleration (l0 ).
There will be l0.5 = 100.5 = 3.16 reduction in
the time to complete the motion.
sent to the case where the acceleration scales as S 1 , and the sec- There will be l0.5 = 3.16 times reduction in
S 2 , ... . power density VP0 .
The reduction of power consumption is 3.16V0 Since the volume of the component
is reduced by a factor of 10, the power consumption after scaling down reduces
lem at hand. We decide the initial definition of what each element repre- by: P = 3.16 × 10 = 0.316 times.
sents.
Question: Estimate the associate changes in the
Force scale Acceleration time Power Density acceleration (a), time (t) and the power supply (P)
Order
q
F F
a= m t= 2sM Fs
P/V0 = tV
1 1 -2 1.5
F
-2.5
0 to actuate a MEMS component if its weight is re-
2 2 -1 1 -1 duced by a factor of 10.
Solution: Since W ∝ V = l3 , so it involves Order
3 3 0 0.5 0.5
4 4 1 0 2
3 scaling, from the table for scaling of dynamic
The first row say that when the force scales forces, we get:
as S 1 then acceleration a scales as S 2 , time There will be no reduction in the
for actuation scales as S 1.5 and power den- acceleration (l0 ).
There will be l0.5 = 100.5 = 3.16 reduction in
the time to complete the motion.
sent to the case where the acceleration scales as S 1 , and the sec- There will be l0.5 = 3.16 times reduction in
S 2 , ... . power density VP0 .
The reduction of power consumption is 3.16V0 Since the volume of the component
is reduced by a factor of 10, the power consumption after scaling down reduces
lem at hand. We decide the initial definition of what each element repre- by: P = 3.16 × 10 = 0.316 times.
sents.

+
V

W +
V

W +
L V

W +
L V
d −

W +
L V
→
−
d E −

W +
L V
→
−
d E −
When two parallel electric conductive plates

is charged by a voltage → Electric field

W +
L V
→
−
d E −

The corresponding potential energy is:
U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2

W +
L V
→
−
d E −

U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2
Dependency of V over plates gap d:
V ∝ d for d ≥ 10 µm

W +
L V
→
−
d E −

U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2

Break down voltage, V

W +
L V
→
−
d E −
0 5 10 15 20 25 30
d (µm)

U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2


Paschen’s effect
W +
L V
→
−
d E −
0 5 10 15 20 25 30
d (µm)

U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2


Paschen’s effect
W +
L V
→
−
d E −
0 5 10 15 20 25 30
d (µm)

for d ≥ 10µm we can model V ∝ l
U = − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2


Paschen’s effect
W +
L V
→
−
d E −
0 5 10 15 20 25 30
d (µm)

We get the scaling of the Potential energy:
The corresponding potential energy is: l0 .l0 .l1 .l1 .(l1 )2
U= − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2 U∝ l1
= (l3 )



Paschen’s effect
W +
L V
→
−
d E −
0 5 10 15 20 25 30
d (µm)

We get the scaling of the Potential energy:
The corresponding potential energy is: l0 .l0 .l1 .l1 .(l1 )2
U= − 12 CV 2 = − ϵ0 ϵ2d
r WL
V2 U∝ l1
= (l3 )
Dependency of V over plates gap d: Scaling: A 10 times reduction of linear size

V ∝ d for d ≥ 10 µm of electrodes → 103 = 1000 times
reduction in Potential energy!!

Electrostatic forces in misaligned electrodes:
FW
+ FL
W
L V
→
−
d E − Fd
Electrostatic forces in misaligned

electrodes are obtained by:
∂U 1 ϵ0 ϵr WLV 2
Fd = − =− ∝ l2 (2)
∂d 2 d2
∂U 1 ϵ0 ϵr WV 2
FL = − =− ∝ l2 (3)
∂L 2 d
∂U 1 ϵ0 ϵr LV 2
FW = − =− ∝ l2 (4)
∂W 2 d
Electrostatic forces in misaligned electrodes:
FW
+ FL
W
L V
→
−
d E − Fd
So, we may conclude that electrostatic forces:

Electrostatic forces in misaligned
electrodes are obtained by: Scaling: A 10 times reduction in electrode
linear dimensions ∝ 102 = 100 times
∂U 1 ϵ0 ϵr WLV 2 reduction in the magnitude of the
Fd = − =− ∝ l2 (2) electrostatic forces.
∂d 2 d2
∂U 1 ϵ0 ϵr WV 2
FL = − =− ∝ l2 (3)
∂L 2 d
∂U 1 ϵ0 ϵr LV 2
FW = − =− ∝ l2 (4)
∂W 2 d
Magnetic forces
Magnetic Forces: Scaling of Magnetic forces The F matrix is now:
caused by the interactions of electrical currents.
−
 
Lets take three different cases:  
Case 1 → S 2 
F =  (5)
2 → S 3 

1 Constant temperature rise from the Case
center to the exterior of the coil Case 3 → S4
windings
Case 3: Here the current density J is assumed to be constant or J = S 0 ,
and hence a wire with one tenth the area carries one tenth the current. The
2 Constant heat flow per unit surface area heat generated per volume of windings is constant for this case. The force
of the coil winding, generated for this constant current case scales as [ S 4 ] { S 3 }, i e., when
the system decreases by a factor of ten in size, the force generated by two
interacting electromagnets decreases by ( 14 ), or a factor of ten thousand.
3 Constant electrical current density in Clearly this is not a strong micro force.
10
the coil winding. Case 2: Since heat can be more easily conducted out of a small volume, it
is possible to run isolated small motors with higher current densities than
2
Assumption 1) leads to forces that scale as S , assumed above. However, increasing the current density makes the motors
much less efficient. If the heat flow per unit surface area of the windings is
assumption 2) leads to forces that scale as S 3 , constant, the current density in the wires scales as J = S −0.5 This increase
in current density for small systems increases the force generated, and the
and assumption 3) leads to forces that scale as force scales as [ S 3 ] { S 2.5 }.
S 4. Think of Case 1 yourself..
Scaling in electricity
ϵ0 ϵr A
Electric resistance: R = ρ Al ∝ l−1 Capacitance: C = d ∝ l1
2
Resistive power loss: P = VR ∝ l1
where V is applied voltage, assumed to be Table: Scaling in electricity
constant. If not, then take it into account.
Electric Quantity Index, α in lα
Electric field energy: U = 21 ϵE 2 ∝ l−2 Current, i 2
Ratio of power loss to available power: Voltage, V 1
P l1 Resistance, R -1
Eavg ∝ l3
→ l−2
Capacitance, C 1
Scaling: A 10 times reduction in size (l) of Inductance, L 1
the power supply system cause 100 times Power, P 2
power loss due to the increase of resistivity

Scaling in Fluid Mechanics
L
Meaning a reduction of 10 in conduit radius
a 10000 times reduction in volumetric flow!
Q
2. Pressure Drop, ∆P: From the same
Hagen-Poiseuille’s equation, we can
∆P derive:
8µVavg L ∆P
Two important quantities in fluid mechanics in ∆P = − 2
=⇒ ∝ a−2 (7)
a L
flows in capillary conduits:
1. Volumetric Flow, Q: From Hagen-
Poiseuille’s equation Scaling: A reduction of 10 times in conduit
radius results in 100 times increase in
πa4 ∆P
Q= =⇒ Q ∝ a4 (6) pressure drop per unit length!!
8µL

Break

MEMS Microfabrication Process
MEMS fabrication process is diffrent from CMOS processes.
MEMS uses a lot of bulk and surface micromachining which is rarely used in CMOS process (except STI and few
modern lithographic techniques).

Overview of MEMS fabrication

Mojor processes in MEMS
MEMS Processes
MEMS Processes
Additive Subtractive Patterning Material modification Mechanical steps
MEMS Processes
Evaporation
Sputtering
LPCVD
Oxidation
Plating
Spray-coating
Spin-coating
MEMS Processes
Evaporation
Sputtering
LPCVD
Oxidation
Plating
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching
Sputtering Reactive ion etching (RIE)
LPCVD Deep Reactive ion etching (DRIE)
Oxidation Wet chemical etching Silicon
Plating Wet chemical etching Thin-film
Spray-coating
Spin-coating
MEMS Processes
Dry etching
Spray-coating
Spin-coating
MEMS Processes
Dry etching
Wet etching
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching Deposition of Photoresist
Dry etching
Sputtering Reactive ion etching (RIE) Photolithography
Wet etching
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching Deposition of Photoresist
Dry etching
Sputtering Reactive ion etching (RIE) Photolithography
Wet etching
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching Deposition of Photoresist Ion-implantation
Dry etching
Sputtering Reactive ion etching (RIE) Photolithography Diffusion doping
LPCVD Deep Reactive ion etching (DRIE) Thermal annealing
Wet etching
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching Deposition of Photoresist Ion-implantation Polishing
Dry etching
Sputtering Reactive ion etching (RIE) Photolithography Diffusion doping Wafer bonding
LPCVD Deep Reactive ion etching (DRIE) Thermal annealing Wafer dicing
Oxidation Wet chemical etching Silicon Wire bonding
Wet etching
Plating Wet chemical etching Thin-film Chip packaging
Spray-coating
Spin-coating
MEMS Processes
Evaporation Plasma etching Deposition of Photoresist Ion-implantation Polishing
Dry etching
Sputtering Reactive ion etching (RIE) Photolithography Diffusion doping Wafer bonding
LPCVD Deep Reactive ion etching (DRIE) Thermal annealing Wafer dicing
Oxidation Wet chemical etching Silicon Wire bonding
Wet etching
Plating Wet chemical etching Thin-film Chip packaging
Spray-coating
Spin-coating
Lithograpy
What is Lithography?

Lithograpy
The art of drawing on stones.

Lithograpy
Mahabalipuram Stone Sculptures, Source: https://www.tamilnadutourisminfo.com/

Lithograpy
For engineers it is art of printing microstructures on Silicon!

Lithograpy

1 Photolithography (Resolution up-to 2 µm)

Lithograpy

1 Photolithography (Resolution up-to 2 µm)
2 Electron beam lithography (EBL) (Resolution up-to 60 nm)
Photolithography
Spin-coating UV exposure and development

Photolithography: Before and after exposure
PR thickness
∆t ∝ 1
ω
10 − 20 sec
Dose = 60 µJ/cm2

Positive and negative photo resists (PPR and NPR)
Corresponding developer solution
In BHF solution

Characteristics of PPR and NPR
Table: Difference between positive and negative photoresists

Characteristic Positive Negative
Adhesion to silicon Fair Excellent
Relative cost More expensive Less expensive
Developer base Aqueous Organic
Solubility in the developer Exposed region is soluble Exposed region is insoluble
Minimum feature 0.5 µm 7 nm
Step coverage Better Lower
Wet chemical resistance Fair Excellent
Examples PMMA Series (e-beam) SU-8 Series (i-Line)
S1800 Series (g-Line) UVN-30 (DUV)
SPR-220 (i-Line) ma-N 1400 Series (i-Line)
ma-P1200 Series (broadband) ma-N 2400 Series (DUV)
General exposure wavelengths for broadband UV-lithography are in a range between 300 nm and 450 nm, which
includes the important lines of high-pressure mercury lamp at 436 nm (g-line), 405 nm (h-line) and 365 nm (i-line).
DUV: Deep ultraviolet, a wavelength range in the far ultraviolet. Chip production uses 248 and 193 nm.
EUV: Extreme ultraviolet, the wavelength range between roughly 100 and 10 nm.
Three optical lithography Configurations
q q
λt λ(g + 2t ) ≫ λ
R≈ 3
2 2 <λ R≈ 3
2
λ → Expose wavelength, g →proximity distance, t → PR thickness.

Optical lithography tools
Vacuum chucks
Silicon wafer
Spinner settings
Vacuum pump

Vacuum chucks
Silicon wafer
Spinner settings
Vacuum pump
Further readings:
http://apps.mnc.umn.edu/pub/equipment/ma6p_sop.pdf
https://www.youtube.com/watch?v=GwZ508kdTas
UV lamp
Vacuum chucks
Silicon wafer
Spinner settings
Vacuum pump
Further readings:
UV lamp
Vacuum chucks
Silicon wafer
Spinner settings
Vacuum pump
Air-suspension table
Further readings:
UV lamp
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Vacuum pump
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Vacuum pump
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Vacuum pump
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Vacuum pump L
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Vacuum pump L R
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Micro-positioners
Vacuum pump L R
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Micro-positioners
Vacuum pump L R
Further readings:
UV lamp Mask Holder
Vacuum chucks
Silicon wafer
Vaccum Chuck
Spinner settings
Micro-positioners
Vacuum pump L R
Further readings:
Electron Beam Lithography
The de Brogli wavelength: λ

λ= h
p
K= 1
2 mv
2
p = mv
√
p = 2mK
λ= √h
2mK
Reference: Oltean, S.E. et. al., 2007.

https://www.researchgate.net/figure/Electron-beam-system_fig1_265621376
Electron Beam Lithography (EBL)
Reference:
https://upload.wikimedia.org/wikipedia/commons/e/e3/EB_litograph.jpg

EBL linewidth
contents...

18ECE302T-U1-L4, L5 Scaling and Photolithography

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

18ECE302T-U1-L4, L5 Scaling and Photolithography

Uploaded by

Copyright:

Available Formats

18ECE302T-MEMS Technology

Unit-1, Lecture-4-5: Sacling, Bulk and Surface Micromachining

Dr. Md Jawaid Alam

January 25, 2023

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 1 / 25

One would intuitively simply scale down the

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

One would intuitively simply scale down the

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

One would intuitively simply scale down the

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

One would intuitively simply scale down the

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 2 / 25

Volume (V) and surface (S) are two physical

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 3 / 25

Volume (V) and surface (S) are two physical

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 3 / 25

Volume (V) and surface (S) are two physical

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 3 / 25

Volume (V) and surface (S) are two physical

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 3 / 25

Volume (V) and surface (S) are two physical

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 3 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Volume, V relates to mass and surface

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Volume, V relates to mass and surface

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Volume, V relates to mass and surface

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Volume, V relates to mass and surface

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 4 / 25

Volume, V relates to mass and surface

Volume, V relates to mass and surface

Volume, V relates to mass and surface

Forces are required to make parts to move

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

An engineer needs to resolve the following

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

An engineer needs to resolve the following

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

An engineer needs to resolve the following

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

An engineer needs to resolve the following

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25

Forces are required to make parts to move

An engineer needs to resolve the following

Dr. Md Jawaid Alam (SRM) 18ECE302T-MEMS Technology January 25, 2023 5 / 25