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‫اﻟﻤﺮﺣﻠﺔ اﻟﺜﺎﻟﺜﺔ‬
‫ﻗﺴﻢ اﻟﻔﯿﺰﯾﺎء‬
‫د‪ .‬ﻋﺒﺪاﻟﻜﺮﯾﻢ زﯾﺪان ﺧﻠﻒ‬

‫)‪Introduction to Semiconductors‬‬

‫‪1‬‬
 CRO

Gas-Filled Tubes

Electron Microscope Oscilloscope

Electron Gun

2
Free Electrons

Surface barrier

3
 work function

Thermionic Emission

Thermionic emission

Tungsten
2%
Barium Ba Thorium
Strontium Sr

Richardson-
Dushman equation

4
1-1 b

5
 Field Emission

Field emission

cold cathode emission

6
 Secondary Emission

Secondary Emission

secondary electrons
Primary electrons

7
 Photo Electric Emission

photo electric emission

h f

8
 b

A
D l

Vacuum Tubes

Electrodes

9
 Diode

Triode

Tetrode

stray capacitance

Screen Grid

10
 Pentode

suppressor grid

1947

11
 Atomic Structure

(1.602X10-19C)

12
 Valence electron
Valence shell

Ne

Ne 2n 2 (1 5)

n
For n=1, Ne = 2
n=2, Ne = 8
n=3, Ne = 18
n=4, Ne = 32

core
29 Cu

13
29 +e
28
+e

Ge Si

14
Energy Bands Theory in Solids

(Crystalline Structure)
(Crystal

15
 (band)

273 oC

(Conduction band)

(free electrons)

(Forbidden Energy gap) (Energy gap)

16
 Fermi level

E f(E)
T

1
f( E ) ( E E f ) / kT
(1 6)
1 e
Ef

k=1.38X10-23 J/K k

If T 0k
0 for E E f
f(E)
1 for E E f

f(E)=0
Fermi energy f(E)=1

E=Ef
If E E f and T 0k
1
f( E )
f
2
Fermi level
50%

17
 (Conductors)

Fermi
Level

300K

18
 (Insulators)

5 eV

19
 : Semiconductors)

1eV

1.21eV 0.785eV

1.1eV 0.72eV

negative temperature coefficient

T
4
For Si , E g 1.21 3.6 10 T (eV) , where T in K
4
For Ge , E g 0.785 2.23 10 T (eV) , where T in K

20
 Intrinsic Semiconductors

Intrinsic semiconductor material

Covalent
Bonds

-273oC

21
 Hole Free electron
(electron-hole pair)

positive charge

22
 Recombination

nsec Lifetime
msec

23
electron current

24
 hole current

I I electron I hole (1 7)

drift velocity

25
26
1-12
1-13

1-8

1-15

Ohm's Law

conductivity

1-17 1-16

27
 K

Diffusion
Current

28
 300K

Doping

extrinsic semiconductor
Impurity atoms

108

108

29
 N-Type
Type Semiconductor N

Arsenic As
Antimony Sb Bismuth Bi Phosphorus P

0.05 eV
0.01 eV

30
 Donor energy level ED

N N

Donors

31
majority carrier N
minority carriers

32
 109 1012
100000 107

P-Type Semiconductor P

B Indium In Gallium Ga
Boron

33
 acceptors
EA
Acceptor energy
0.16eV 0.01eV level

34
P

35
p

36
 1-22 1-21 1-20

37
38
 2.5eV
4300

2400oC
100oC

35oC

300K

39