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Optoelectronic Devices
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu
1) Light to electricity
λ ( µm ) = 1.24 EG ( eV )
2) Electricity to light
N+ P+
i-Semiconductor
Fp
EC
q (Vbi + VR )
ID
EC
Fn
EV +VR −
x
Avalanche PIN photodiodes
EC
Fp
q (Vbi + VR )
ID
EC
Fn
EV
+VR −
x
Classification
N+ P
E = hf = EG
λ ( µm ) = 1.24 EG ( eV )
2) Electricity to light
R = 100%
Fabry-Perot cavity
R = 99.9% ii) Stimulated recombination (Einstein)
Lundstrom ECE 305 S16
Summary