ECE-­305:    Key  Equations  (for  exam  5)  

Spring  2016,  Alam  and  Lundstrom,  Purdue  University  
 
Physical  constants:         Silicon  parameters  (T  =  300K)  
! = 1.055 ! 10 "34
[ J-s ]       N C = 3.23! 1019 cm -3
   
m0 = 9.109 ! 10 "31 [ kg ]       NV = 1.83! 1019 cm -3  
kB = 1.380 ! 10 "23 [ J/K ]       ni = 1! 1010 cm -3
 
q = 1.602 ! 10 "19 [C]      
K S = 11.8
 
! 0 = 8.854 " 10#12 [F/m]         k BT q = 0.026 eV  (300  K)  

(m ) 2 ( E ! EC )
3/2
*

DOS:   gC ( E) =
" !
n
2 3
       FF:     f ( E ) =
1
( E!EF ) kBT
ni = N C NV e! EG /2 kBT  
  1+ e  
Equilibrium  Carrier  densities:    
3/2
1 " 2m*k T %
n0 = N C e( F C ) n0 = ni e( EF !Ei ) kBT  
E !E k BT
   m-­‐3   N C = $ n 2B ' m-­‐3  
4 # !! &
3/2
1 " 2mp k BT %
*

p0 = NV e( V F ) p0 = ni e( Ei !EF ) kBT  
E !E k BT
   m-­‐3   NV = $ ' m-­‐3  
4 # ! !2 &
 
Space  charge  neutrality:     p ! n + N D+ ! N A! = 0   Law  of  Mass  Action:     n0 p0 = ni2    
Conductivity  and  resistivity:     ! = ! n + ! p = q nµ n + pµ p = 1 "   ( ) ( )
dFn dn
Current  equations:     J n = nµ n     J n = nqµ nE x + qDn   Dn µ n = k BT q  
dx dx
dF dp
J p = pµ p p     J p = pqµ pE x ! qD p   D p µ p = k BT q
    dx dx  
Recombination:  SRH:     R = !n " n m s   or -­‐3 -­‐1     R = !p " p   m s -­‐3 -­‐1  

   
Semiconductor  Equations:  
!
!n $ Jn '
= "# i & ) + Gn " Rn         Minority  Carrier  Diffusion  Equation:  
!t % "q (
!
!p $ Jp ' ! "p ! 2 "p "p
= "# i & ) + G p " Rp         = Dp # + GL  
!t % q( !t !x 2 $ p
!
( )
0 = !" i # E + $
         
Lp = D p! p
 
 
Carrier  densities  and  QFL’s:    
n = N e( n C ) B     n = n e( Fn !Ei ) kBT  
F !E k T
C
  i

p = NV e
(EV ! Fp ) k BT
        p = ni e( i p ) B  
E !F k T

ECE-­‐305     1   Spring  2016  

      

PN  junction  electrostatics:  
 
kBT ! N D N A $ dE ! ( x)
Vbi = ln # =
q " ni2 &%   dx K S " 0  
 
1/2
( 2K ! " N + N D % + NA ND 2qVbi " N D N A %
W =* S 0$ A ' Vbi - xn = W xp = W E (0) =
) q # NDNA & ,   N A + N D   N A + N D     K s! 0 $# N A + N D '&  
 
Diode  Current:  
n2 ni2 qVA
!n ( 0 ) = i ( eqVA kBT " 1) !p ( 0 ) = (e kBT
" 1)
NA   ND  
! D n2 D n2 $ ! D n2 D n2 $
I D = I 0 ( eqVA /kBT ! 1)                 I 0 = qA # n i + p i &    (long)     I 0 = qA # n i + p i &    (short)  
" Ln N A L p N D % " WP N A Wn N D %

( )
non-­‐ideal   I D = I 0 eq(V !IRS )/nkBT ! 1         I gen = !qA i W  
n
2" 0
 
I +I K S! 0 A
small  signal:     Gd = D 0     C J (VR ) = 1/2   C D = Gd ! n  
kBT q # 2K S ! 0 &
% qN (Vbi " VA ) (
$ A '
 
 
MS  Diodes:     qVbi = ! M " ! S     ! BP = " + EG # ! M   ! BN = ! M " #  
 
4! qm *kB2
J = J 0 ( eqVA /kBT ! 1)   J 0 = A*T 2 e! " B kBT   A* =  
h3
 
 
MOS  Capacitors:  
2K S ! 0"S 2qN A!S
W= cm   E S = V/cm   QB = !qN AW ("S ) = ! 2q K S # 0 N A"S C/cm 2  
qN A K S" 0  
QS (!S )
VG = VFB + !S + "!ox = VFB + !S #   Cox = K O! 0 xo   VFB = ! ms q " QF Cox    
Cox
Cox QB ( 2"F )
C= VT = ! + 2"F Qn = !Cox (VG ! VT )  
K W (!S ) Cox
1+ O    
K S xo  
 
 
 
 
 

ECE-­‐305     2   Spring  2016  

      

 
MOSFETs:  
I D = !WQn ( y = 0 ) " y ( y = 0 )  
W
ID = ( )
µ C V ! VT VDS    
L n ox GS
I D = W Cox ! sat (VGS " VT )  
 
Square  Law  theory:  
W ( 0 & VDS & VGS ! VT ,+
ID =
L
( )
µ nCox "# VGS ! VT VDS ! VDS
2
2 $% *
) VGS ' VT
-  
,
W # VDS > VGS ! VT &
µ nCox (VGS ! VT )
2
ID = %V " V (  
2L $ GS T '
 
 

ECE-­‐305     3   Spring  2016