MOS Threshold Voltage

• This is the gate voltage required to strongly invert the surface of the substrate :
N-Type substrate Î we need to Bend the Bands Upward by 2qϕ F.
P-Type substrate Î we need to Bend the Bands Downward by 2qϕ F.
G O S

2qϕ F

Depletion
Region

Vth = Flat Band voltage (VFB) – 2qϕ F + Voltage to sustain the Depletion
region charge (-QB/Cox) + Voltage to overcome the Oxide trapped charge (-Qox/Cox)

• Flat Band Voltage VFB: The Voltage required to flatten the energy Bands, at
the surface of the substrate VFB = EFG – EFS = ФG – ФS

Initially Before Contact:

Gate Oxide Semiconductor

Ec
EFG

EFS

Ev

After
G O S

qVFB

EF
ФG = Gate Work function
ФS = Substrate Work function (Depends on the Doping)
= χs + Eg/2q – ϕ F

χs : Electron Affinity (Eo – Ec)

The Work function is the Energy required to remove an electron from the
Fermi level to outside the Solid.

Vacuum Level Eo

q χs
Ec
Eg/2
Ei
qϕ F
EF
Ev

Vacuum Level: Energy level that electrons outside Semiconductor

Î +ve VFB means that Bands are Bent Upward at zero Bias (since We need
a +ve voltage to push them down to make them flat).

Î -ve VFB means that Bands are Bent Downward at zero Bias (since We
need a -ve voltage to pull them up to make them flat).

ϕ F = VT ln(ND/ni) For N-Type substrate.

ϕ F = - VT ln(Na/ni) For P-Type substrate.

• QB, the Depletion charge = + ε

(2q NSub sub |2ϕ F |) For N-Type substrate

=– ε
(2q NSub sub |2ϕ F |) For P-Type substrate

NSub = net substrate Doping.

εsub = Dielectric constant of substrate.
e.g) For Si εsi = εo εsir : εo = 8.85x10 ; εsir = 12
-14

• Qox = this is a charge trapped in the Oxide during manufacturing.

 Example 1: A MOS device is made with an AL Gate (ФAL = 4.15 ev) and P-
Type substrate (Na = 1016 cm¯³). The Oxide capacitance =2 fF/µm².
f = 1exp-15. Assume Qox = 0.
Calculate Vth χsi = 4.1 ev Egsi = 1.1 ev = 1.1 * q J

Sol

Vth = VFB – 2ϕ F – QB/ Cox – Qox/ Cox

VFB = ФG – ФS = 4.15 – [Xs +Eg/2 q – ϕ F] = 4.15 – [4.1 + 0.55 – ϕ F]

ϕ F = -0.025 ln (1exp16/1exp10) = -0.345 V

VFB = 4.15 – 4.1 – 0.55 – 0.345 = – 0.89 V

at zero Bias
G O S

EF

QB = – √ (2 * 1.6*10-19 * 1016 *8.85*10-14 * 12 * 0.69) = – 4.8*10-8 C/cm²

Cox = 2 fF/µm² = 2 * 1*10-15 * 1 * 108 = 2 * 10-7 F/cm²

Vth = – 0.89 + 0.69 + [4.8*10-8 / 2 * 10-7] = 0.04V

at VG = Vth

G O S

0.69 ev

EF