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  • A0260162R-Zhao Zijie-5502 Homework2

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    赵子杰
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    This document summarizes key characteristics of MOSFET transistors in three regimes: 1) Linear regime: When VDS < VGS - VT, the MOSFET is in the linear regime where drain current ID increases linearly with increasing VDS. 2) Saturation regime: When VDS > VGS - VT, the MOSFET reaches saturation and a pinch-off region forms, limiting further increase in ID despite increasing VDS. 3) Subthreshold regime: At low gate voltages below the threshold VT, diffusion current dominates and ID decreases exponentially with decreasing VGS according to the subthreshold slope.

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    A0260162R-Zhao Zijie-5502 homework2

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    This document summarizes key characteristics of MOSFET transistors in three regimes: 1) Linear regime: When VDS < VGS - VT, the MOSFET is in the linear regime where drain current ID increases linearly with increasing VDS. 2) Saturation regime: When VDS > VGS - VT, the MOSFET reaches saturation and a pinch-off region forms, limiting further increase in ID despite increasing VDS. 3) Subthreshold regime: At low gate voltages below the threshold VT, diffusion current dominates and ID decreases exponentially with decreasing VGS according to the subthreshold slope.

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    10 views7 pages

    A0260162R-Zhao Zijie-5502 Homework2

    Uploaded by

    赵子杰
    This document summarizes key characteristics of MOSFET transistors in three regimes: 1) Linear regime: When VDS < VGS - VT, the MOSFET is in the linear regime where drain current ID increases linearly with increasing VDS. 2) Saturation regime: When VDS > VGS - VT, the MOSFET reaches saturation and a pinch-off region forms, limiting further increase in ID despite increasing VDS. 3) Subthreshold regime: At low gate voltages below the threshold VT, diffusion current dominates and ID decreases exponentially with decreasing VGS according to the subthreshold slope.

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    of 7

    Homework A 026016212

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