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MIS-Based GaN Schottky Barrier Diodes:

Interfacial Conditions on the Reverse and
Forward Properties
Fuping Huang, Zhizhong Wang, Chunshuang Chu , Qianqian Liu, Yongjian Li ,
Zhen Xin , Yonghui Zhang , Qian Sun , and Zi-Hui Zhang

1 Abstract — In this work, we have conducted systematic Index Terms — Breakdown voltage (BV), gallium nitride 27
2 studies on the interfacial conditions for gallium nitride (GaN), leakage current, metal–insulator–semiconductor 28
3 (GaN)-based trench metal/insulator/semiconductor (MIS)- (MIS) structure, specific ON-resistance, trench MOS barrier 29
4 type barrier Schottky rectifier (TMBS) with the help of the Schottky (TMBS) rectifier. 30
5 T-CAD tools. Our results show that the donor-type traps
6 tend to reduce the Schottky barrier height (qϕs ), which
7 weakens the charge coupling effect, increases the leakage
I. I NTRODUCTION 31
8 current, and finally reduces the breakdown voltage (BV).
9 On the contrary, the acceptor-type traps at the contact inter-
10
11
12
face and mesa sidewall will increase qϕs and the turn-on
voltage (VON ) because they can capture electrons in the
mesa region and show the negative polarity. This then
G ALLIUM nitride (GaN)-based power devices, such as
GaN FET, p-i-n diodes, Schottky barrier diodes (SBDs),
and so on, have emerged as potential candidates for current
32

33

34

13 enhances the electron depletion at the contact interface and power transistors and diodes [1]. Most of these power devices 35
14 the mesa sidewall, resulting in an increase in qϕs and VON . have been investigated by adopting GaN heteroepitaxial layers 36
15 Therefore, this process can increase the reverse blocking grown on foreign substrates, such as SiC, sapphire, and Si. 37
16 characteristics. However, for solving the complicated inter-
17 facial conditions in the Schottky contact region, we propose Lateral AlGaN/GaN SBD taking advantage of 2-D electron 38

18 using an MIS structure with a 1-nm Al2 O3 insulation layer for gas (2-DEG) is one building block for power devices [2]. 39

19 the GaN-based TMBS rectifiers. Based on the results, the This type of device shows significant progress in produc- 40
20 tunneling process and thermionic-emission (TE) process ing low turn-on voltage (VON ) and high breakdown voltage 41
21 take into account for the current transport mechanism for (BV) over 10 kV [3], [4]. Quasi-vertical and full-vertical 42
22 the MIS-TMBS rectifiers. Meanwhile, the 1-nm thick Al2 O3
23 interlayer increases the effective Schottky barrier height GaN power diodes also have better thermal scalability and 43

24 (qϕs + qϕT ), which significantly reduces the reverse leakage. can produce large BV [5], [6]. In addition, compared with 44

25 In addition, this design offers more freedom in selecting the lateral AlGaN/GaN SBD, quasi-vertical and full-vertical GaN 45
26 Schottky contact electrode for the MIS-TMBS rectifier. power diodes are less sensitive to surface traps [7], [8]. 46

However, the high electric field at the Schottky contact region 47

Manuscript received 28 July 2022; accepted 22 August 2022. This for those quasi-vertical and full-vertical GaN power diodes 48
work was supported in part by the National Natural Science Foundation
of China under Grant 62074050; in part by the State Key Laboratory leads to image force, and this shall result in the Schottky 49

of Reliability and Intelligence of Electrical Equipment, Hebei University barrier lowering effect and an increased leakage current [9]. 50
of Technology, under Grant EERI_PI2020008; and in part by the Key To overcome this effect, a few effective edge termination 51
Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-
Tech and Nano-Bionics, Chinese Academy of Sciences, under Grant technologies have been proposed, i.e., using guard ring [10], 52

22ZS03. The review of this article was arranged by Editor K. Alam. p-type junction termination extension (JTE) [11], field plate 53
(Corresponding author: Zi-Hui Zhang.) [12], ion implantation [13], and so on. For the convenience 54
Fuping Huang, Zhizhong Wang, Chunshuang Chu, Qianqian Liu,
Yonghui Zhang, and Zi-Hui Zhang are with the State Key Laboratory of easier fabrication, a trench MOS barrier Schottky (TMBS) 55

of Reliability and Intelligence of Electrical Equipment and the School of rectifier has been proposed and developed for GaN and even 56
Electronics and Information Engineering, Hebei University of Technology, Ga2 O3 -based SBDs [14], [15], which show excellent electrical 57
Tianjin 300401, P. R. China, and also with the Key Laboratory of Elec-
tronic Materials and Devices of Tianjin, Hebei University of Technology, properties in manipulating the magnitude of the electric field 58

Tianjin 300401, P. R. China (e-mail: zh.zhang@hebut.edu.cn). and the depletion region boundary in the drift layer with the 59
Yongjian Li and Zhen Xin are with the State Key Laboratory of Reliability help of charge-coupling effect [16], [17]. 60
and Intelligence of Electrical Equipment, Hebei University of Technology,
Tianjin 300401, P. R. China. Among these reported GaN-based TMBS rectifiers at the 61

Qian Sun is with the Suzhou Institute of Nano-Tech and Nano-Bionics, current stage, the levels of specific ON-resistance (Rsp.on ) and 62
Chinese Academy of Sciences, Suzhou 215123, P. R. China. BV are far from the theoretical limit of GaN materials. The 63
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/TED.2022.3201831. trap-related current transport process is among the mechanisms 64

Digital Object Identifier 10.1109/TED.2022.3201831 causing the degradation of device characteristics [18], [19]. 65

0018-9383 © 2022 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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2 IEEE TRANSACTIONS ON ELECTRON DEVICES

66 The inductively coupled plasma (ICP) etching process gen-

67 erates N-vacancies (VN ) and VN -related complexes of point
68 traps, which serve as donor-type states on the mesa sur-
69 face [20], [21]. These donor-type traps affect both the forward
70 conduction and BV. Different methods have been demonstrated
71 to minimize surface traps, such as surface passivation by using,
72 e.g., SiO2 , Si3 N4 , and Al2 O3 insulation layers [22], [23],
73 wet treatment by using tetra methyl ammonium hydroxide
74 (TMAH) solution [24], and thermal annealing process in N2
75 or O2 plasma ambient [25], [26]. Therefore, it is worth inves-
76 tigating the impact of interfacial conditions on the forward
Fig. 1. (a) Schematic cross-sectional view of the GaN-based TMBS
77 and reverse characteristics in the Schottky contact region and rectifier. (b) Possible carrier transport mechanisms at/near the Schottky
78 mesa sidewall region for GaN-based TMBS rectifiers, which contact interface. ① means TE process, ② indicates the image-force
79 is rarely reported. model that reflects the energy barrier lowing effect (dashed line), ③
shows the DT process, ④ represents trap-assisted tunneling process
80 In this work, we address these challenges and gaps by that is associated with the set traps in this work, and ⑤ represents the
81 making a systematic physical study on the interfacial con- trap-induced SRH nonradiative recombination process.
82 ditions for the GaN-based TMBS rectifiers with the help
83 of T-CAD tools. Section II presents the essential struc-
84 tural parameters and physical models used in GaN-based metal is nickel (Ni) for the studied TMBS rectifiers. Fig. 1(a) 122

85 TMBS rectifiers. Section III proves that these donor-type and also shows the schematic of the depletion region boundary 123

86 acceptor-type surface traps make significant differences in for the MIS structure and the Schottky contact to reveal the 124

87 affecting the electrical characteristics. In Section III-A, the 2-D charge-coupling effect. Besides, the set regions for the 125

88 donor-type interface state such as N-vacancies is mainly sidewall traps and interface states have also been presented in 126

89 responsible for the decreased Schottky barrier, the weakened Fig. 1(a). 127

90 charge-coupling effect, the increased leakage current, and the In our numerical studies, we conduct the investigations of 128

91 reduced BV. On the contrary, acceptor-type traps such as gal- the GaN-based TMBS rectifiers by using advanced physical 129

92 lium (Ga) vacancies cause the increased Schottky barrier and models of semiconductor devices software (APSYS). Accord- 130

93 the enhanced charge-coupling effect, thus improving reverse ing to reports [27], [28], [29], [30], the shadow donor-type 131

94 blocking characteristics. In Section III-B, the donor-type side- trap level is set at 0.24 eV below the conduction band (i.e., 132

95 wall traps have a weak impact on the forward conduction. E C − 0.24 eV) with the capture cross section of 3.4 × 10−17 133

96 However, the acceptor-type traps will result in a narrow current cm2 . The acceptor-type trap level is set at 1.5 eV below 134

97 flow path and lead to a decreased forward current density. the conduction band (E C − 1.5 eV) with a capture cross 135

98 In addition, the acceptor-type traps can help to increase BV section of 2.1 × 10−15 cm2 . Moreover, the related Auger 136

99 because the accepter-type traps after capturing electrons serve recombination coefficient and the trap-related Shockley–Read– 137

100 as the virtual field plate. Section III also shows that the Hall (SRH) recombination lifetime are set to be 1.0 × 10−30 138

101 donor-type traps are more likely to cause premature breakdown cm6 · s−1 and 1 × 10−7 s in our work, respectively [31]. 139

102 for the current power devices. In Section III-C, we also The models for thermionic emission (TE), barrier lowering 140

103 propose, model, and demonstrate using a meta–insulator– model, trap-assisted tunneling model, impact ionization model, 141

104 semiconductor (MIS) structure with a 1-nm-thick Al2 O3 layer and so on are also considered in our work [18], [32], [33]. 142

105 in the GaN-based TMBS rectifiers. We find that the 1-nm- In addition, the thermionic-field emission (TFE) process [18] 143

106 thick Al2 O3 interlayer increases the effective Schottky barrier and Poole–Frenkel emission (P–F) process [19] have been 144

107 height (qϕ B ), and this significantly reduces the leakage current taken into account in the trap-assisted tunneling model accord- 145

108 even when surface traps and different Schottky metals are ing to the proposed surface trap model in our work. The 146

109 considered. The BV can also be increased. relevant carrier transport mechanisms at/near the Schottky 147

contact interface have also been shown in Fig. 1(b). The 148

avalanche-dominated breakdown is triggered by the impact 149

110 II. S TRUCTURE D ESIGN AND S IMULATION M ODELS ionization model for the studied TMBS rectifiers in the reverse 150

111 Fig. 1(a) illustrates the device consisting of a 2-μm-thick bias state. The impact ionization rates of electrons and holes 151

112 n+ -GaN current spreading layer with a doping concentration for GaN can be calculated by using Chynoweth’s equation 152

113 of 5 × 1018 cm−3 and an 11-μm n− -GaN drift layer with a when referring to (1) and (2) for electrons and holes, respec- 153

114 background n-type doping concentration of 2 × 1016 cm−3 . tively [34] 154

115 We also set the mesa width (Wm ), the trench depth (Dtr ), and (−3.4×107 )
v/cm

116 the trench width (Wtr ) to be 2, 2, and 3 μm, respectively. αn = 2.9 × 108 cm−1 × e E (1) 155

Meanwhile, the field plate insulator is Al2 O3 with a thickness (−2.03×107 v/cm )
α p = 1.34 × 108 cm−1 × e
117
E (2) 156
118 (Tox ) of 700 nm. Then, the Schottky electrode is set on the
119 surface of the n− -GaN drift layer, and the ohmic cathode is where E defines the electric field in the drift layer. Moreover, 157

120 designed on the backside of the n+ -GaN substrate to form a some basic physical models, such as the continuity equations, 158

121 full-vertical structure. If it is not specified, the Schottky contact Poisson’s equations, the drift-diffusion equation, bandgap 159

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HUANG et al.: MIS-BASED GaN SBDs: INTERFACIAL CONDITIONS 3

Fig. 2. Forward current–voltage (I–V ) characteristics by varying the

density for (a) donor-type trap and (c) acceptor-type trap at the Schottky
contact interface, and the curves in semi-log scale are also shown.
Extracted qϕs and VON with different densities for (b) donor-type traps
and (d) acceptor-type traps.

160 narrowing model, high field velocity saturation model, and

161 mobility model, are also considered in our numerical study
162 process.
Fig. 3. 2-D forward current profiles for the studied devices at the forward
voltage of 3 V. (a) Without trap, (b) donor-type trap with the trap density
of 2 × 1014 cm−2 , and (c) acceptor-type trap with the trap density of 2 ×
163 III. R ESULTS AND D ISCUSSION 1014 cm−2 .
164 A. Interface States
165 We investigate the GaN-based TMBS rectifiers in Fig. 1(a)
166 by setting different interface states at the Schottky contact
167 region and varying the trap density from 1 × 1013 to 2 ×
168 1014 cm−2 . It can be found that the forward current density
169 can be increased with the increasing donor-type trap density
170 according to Fig. 2(a). Fig. 2(b) shows that the effective
171 Schottky barrier height (qϕs) decreases in the presence of
172 donor-type traps, which in turn reduces the turn-on voltage
173 (VON ), such that qϕs is decreased from 0.95 to 0.2 eV and VON
174 is decreased from 0.78 to 0.13 V when the donor-type trap
175 density increases from 1 × 1013 to 2 × 1014 cm−2 . Note that
176 VON is defined as the interception with the x-axis of the linear
177 extrapolation for the forward diode current, and the value of
178 the “effective Schottky barrier height (qϕs) ” is calculated from
179 the top of the conduction band to the Fermi level, which has
180 also been shown in Fig. 1(b). The increased donor-type trap
181 density also leads to the increased leakage current according
182 to Fig. 2(a). The impact of the acceptor-type interface traps Fig. 4. Reverse I–V characteristics by varying the density for (a) donor-
183 on the forward current density, qϕs , VON , and leakage current type traps and (b) acceptor-type traps at the Schottky interface. 2-D
current density profiles for the studied TMBS rectifiers (c) without trap,
184 is just opposite to that of the donor-type interface traps, which (d) with a donor-type trap density of 5 × 1013 cm−2 , and (e) with an
185 is depicted in Fig. 2(c) and (d), respectively. Compared to acceptor-type trap density of 5 × 1013 cm−2 . 2-D current density is
186 the donor-type traps, the reduced current density results from calculated at the reverse bias voltage of 700 V.
187 the fact that electrons are more likely to be captured by the
188 acceptor-type traps and form negative charged centers, which
189 increases both the Schottky contact barrier height and VON for increases to 2 × 1014 cm−2 . The reduced qϕs leads to 196

190 the diode. Moreover, the 2-D current density profiles, as shown the increase of OFF-state leakage current according to the 197

191 in Fig. 3(a)–(c), prove the points of view in Fig. 2(a)–(d). conclusion in Fig. 2(a) and (b). However, the reduced BV 198

192 Fig. 4(a) demonstrates that the BV decreases from ∼1200 is speculated to the fact that the donor-type traps influence 199

193 to ∼300 V with the donor-type trap density increasing to the charge-coupling effect in the mesa region. According to 200

194 2 × 1014 from 1 × 1013 cm−2 . Moreover, the reverse leakage Fig. 4(b), an opposite trend is observed that the leakage current 201

195 current also increases significantly when the donor-type trap can be markedly reduced when the acceptor-type traps are 202

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4 IEEE TRANSACTIONS ON ELECTRON DEVICES

Fig. 5. (a) Electric field profiles along the mesa midline for the
studied TMBS rectifiers with different donor-type and acceptor-type trap
densities. (b) Extracted leakage current density as a function of the
density for the donor-type and acceptor-type interface traps when the
reverse bias voltage is 700 V.

Fig. 7. 2-D forward current profiles for the studied devices (a) without
traps and with (b) donor-type traps, and (c) acceptor-type traps. Note
that the trap concentration of 1 × 1017 cm−3 is set.

Fig. 6. Forward I–V characteristics in terms of different sidewall trap

concentrations for (a) donor-type traps and (b) acceptor-type traps.
a smaller impact on the Schottky barrier height, which results 231

in a weak impact on the forward conduction and leakage 232

current. However, the introduction of acceptor-type sidewall 233

203 applied, and the increased acceptor-type trap density further traps will sacrifice the current density when the sidewall trap 234

204 enhances the BV. The increased qϕS leads to the decrease concentration exceeds 1 × 1015 cm−3 [see Fig. 6(b)]. The 235

205 of OFF-state leakage current, which agrees with Fig. 2(c) and decreased forward current density can be well attributed to 236

206 (d). Meanwhile, Fig. 4(c)–(e) visually shows the major leakage the weakened current spreading effect. Because the sidewall 237

207 current transport in the 2-D contour at the Schottky interface acceptor-type traps behave as negatively charged centers after 238

208 and the introduction of an acceptor-type trap shall reduce the capturing electrons, then the electrons will be pushed away 239

209 metal/semiconductor leakage process, which also agrees with from the mesa edge. This will result in a narrow current 240

210 Fig. 4(a) and (b). flow path and leads to a decreased forward current density. 241

211 Meanwhile, Fig. 5(a) and (b) presents that the acceptor- In addition, it is worth noting that the sidewall acceptor-type 242

212 type traps help to reduce the electric field magnitude and traps can help to reduce the leakage current [see Fig. 6(b)]. 243

213 leakage current at the contact interface, while these values Moreover, a significant current crowding effect in the mesa 244

214 will be increased when the donor-type traps are set therein. region is observed for the studied TMBS rectifier with the 245

215 Fig. 5(a) also reveals that the surface traps strongly affect the acceptor-type sidewall trap concentration of 1 × 1017 cm−3 246

216 charge-coupling effect between the Schottky junction and MIS according to Fig. 7(c) when compared to Fig. 7(a) and (b). 247

217 structure, such that the acceptor-type traps can even better On the other hand, we also systematically study the impact 248

218 favor the charge-coupling effect in the mesa region, and this of different types of sidewall traps on the reverse blocking 249

219 helps to reduce the electric field at the Schottky contact region. characteristics for GaN-based TMBS rectifiers, which are 250

220 In summary, the donor-type interface traps tend to reduce shown in Fig. 8(a) and (b). We can find that the donor-type or 251

221 the Schottky barrier height, weaken the charge-coupling effect, acceptor-type sidewall traps have less influence on the leakage 252

222 increase the leakage current, and reduce the BV. On the current and BV when the trap concentration is smaller than 1 × 253

223 contrary, the acceptor-type traps enable the increased Schottky 1016 cm−3 . However, the reduced BV can be generated when 254

224 barrier height and the enhanced charge-coupling effect, thus donor-type trap concentration reaches 1 × 1017 cm−3 . The 255

225 increasing the BV. Therefore, artificially introducing acceptor- opposite trend is observed in the case of acceptor-type traps 256

226 type states at the Schottky contact interface seems to improve [see Fig. 8(a) and (b)]. Besides, the results in Fig. 8(c) confirm 257

227 the OFF-state characteristics of GaN-based SBDs. that acceptor-type sidewall traps help to enhance the charge- 258

coupling effect in the mesa region when the trap concentration 259

is 1 × 1017 cm−3 , thereby reducing the electric field magnitude 260

228 B. Sidewall Traps at the Schottky contact interface, which helps increase BV. 261

229 As shown in Fig. 6(a), unlike the interface states in the The accepter-type traps after capturing electrons serve as the 262

230 Schottky contact region, the donor-type sidewall traps have virtual field plate. Nevertheless, positively charged donor-type 263

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HUANG et al.: MIS-BASED GaN SBDs: INTERFACIAL CONDITIONS 5

Fig. 9. (a) Forward I–V characteristics curves for the ideal TMBS rectifier
and the actual TMBS rectifier, and the curves in semi-log scale are also
shown. (b) Conduction band profiles for the studied ideal TMBS rectifier
and the actual TMBS rectifier.
Fig. 8. Reverse I–V characteristics by varying the trap concentration of
sidewall traps. (a) Donor-type trap and (b) acceptor-type trap. (c) Electric
field profiles along the mesa midline for the studied TMBS rectifiers with
the different sidewall trap concentrations.

264 sidewall traps after releasing electrons will compensate for

265 the electric field that is produced by the field plate on the
266 mesa sidewall, and hence, the charge-coupling effect can be
267 suppressed. To summarize, the donor-type sidewall traps have
268 a weak impact on the forward current density, while the
269 acceptor-type sidewall traps will suppress the current spread-
270 ing effect and lead to a decreased forward current density.
271 However, proper consideration of acceptor-type sidewall traps
272 can help increase the BV.
273 According to the previous discussion, the donor-type traps
274 always lead to premature breakdown and increased leakage
275 current for current power diodes. The acceptor-type traps are
276 at a very deep level in the energy band, and thus, they are
277 not able to effectively trap electrons and serve as negatively
278 charged centers [28], [35]. According to other reports [27],
279 [28], [29], [30], [35], the interface state densities for the donor-
280 type and acceptor-type traps are normally 5 × 1013 and 2 × Fig. 10. (a) Reverse blocking characteristics for the studied ideal TMBS
and actual TMBS. Extracted electric field distribution at the reverse bias
281 1012 cm−2 , respectively. The concentration for the donor-type of 300 V: (b) mesa bottom and (c) mesa midline. 2-D leakage current
282 and acceptor-type sidewall traps is set to 1 × 1017 and 5 × profiles at the reverse bias of 300 V: (d) ideal TMBS without trap models
283 1014 cm−3 , respectively. By taking those actual parameters into and (e) actual TMBS with trap models.
284 account, we calculate the forward conduction and the reverse
285 blocking characteristic in Figs. 9 and 10. When compared to
can be due to the increased electric field magnitude at the mesa 302
286 the ideal TMBS rectifier, Fig. 9(a) shows that the reduced
bottom and the Schottky contact region [see Fig. 10(b) and 303
287 forward bias is obtained with the cost of the increased leakage
(c)], which are triggered by the donor-type traps. According 304
288 current when the trap information is considered in our model.
to the results in Figs. 4, 5, and 8, after releasing electrons, 305
289 Fig. 9(b) shows the conduction band profiles in the Schottky
the positively charged donor-type traps can reduce the 2-D 306
290 contact region when the applied bias is 0 V, and it reveals that
charge-coupling effect in the mesa region for the actual GaN- 307
291 the actual GaN-based TMBS rectifier shows a decreased con-
based TMBS rectifier, then increasing the surface electric 308
292 duction band barrier height when compared to the ideal TMBS
field magnitude and leakage current. When compared with 309
293 rectifier without considering any traps. Moreover, Fig. 9(a)
Fig. 10(d), the increased leakage current for the actual TMBS 310
294 also presents the slightly increased forward current density for
rectifier, as shown in Fig. 10(e), also proves these results. 311
295 the actual TMBS rectifier with the trap models when compared
296 to the ideal TMBS rectifier.
297 Fig. 10(a) presents that a larger leakage current and a lower C. MIS TMBS Rectifier 312

298 BV (at 1 mA/cm2 ) can be obtained for the actual TMBS As a result, it seems that the donor-type traps are more 313

299 rectifier with trap models when compared to the ideal device, likely to strongly affect the forward and reverse characteris- 314

300 such that the BV is reduced to 800 V from 1200 V. The tics. It is possible to intentionally induce any acceptor-type 315

301 significant degradation of the reverse blocking performance states to compensate the donor-type traps according to our 316

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6 IEEE TRANSACTIONS ON ELECTRON DEVICES

Fig. 12. (a) Simulated forward I–V curves for the actual MIS-TMBS
rectifiers with different anode metals, i.e., W, Au, Ni, and Pt. (b) Exacted
turn-on voltage for the actual MIS-TMBS rectifiers and ideal TMBS
rectifiers.

Fig. 11. (a) Schematic cross-sectional view of the GaN-based TMBS

rectifier with a thin Al2 O3 tunneling layer (MIS-TMBS). Schematic of
energy band for the current transport mechanism of MIS-TMBS rectifier
under external bias: (b) forward bias and (c) reverse bias.

317 previous discussions. Nevertheless, as has been revealed in

318 Figs. 2(c) and 6(b), the introduction of the acceptor-type traps
319 can inevitably increase VON . Meanwhile, this process seems
320 to be challenging and costly such as the fluoride ion (F− )
321 diffusion process when F− implantation edge termination is
322 adopted [36].
323 Hence, we design a GaN-based MIS-TMBS rectifier with a
324 1-nm Al2 O3 tunneling layer, as shown in Fig. 11(a). According
325 to [37], the bandgap and relative dielectric constant are set to
326 6.5 eV and 9 in this work for the 1-nm Al2 O3 , respectively.
327 The conduction band offset is set to 1.1 eV between the GaN
328 and Al2 O3 . Both the donor-type traps and the acceptor-type
329 traps are set on the Schottky contact interface and the mesa
330 sidewalls. The Schottky contact interface trap density and the Fig. 13. (a) Reverse I–V characteristics curves for the actual MIS-TMBS
331 mesa sidewall trap concentrations are the same as previously rectifiers and ideal TMBS rectifiers with different Schottky electrodes.
332 mentioned. Fig. 11(b) and (c) reveals that the direct tunneling (b) Exacted leakage current density at the reverse bias of 900 V.
(c) Vertical electric field profiles at the mesa midline for the studied
333 (DT) process and TE process are the main current transport MIS-TMBS rectifiers with different Schottky electrodes and the vertical
334 processes. At the forward bias, electrons can tunnel directly electric field for the ideal TMBS rectifiers have also been shown.
335 through the 1-nm Al2 O3 layer. The addition barrier height
336 (qϕT ) for the TE process is calculated to be 1.1 eV (i.e.,
337 conduction band offset between the GaN and Al2 O3 ), which density at the same bias and reduced VON , and this is due to the 353

338 makes the TE process less possible to take place. At the reduced Schottky barrier height when the metal with a small 354

339 reverse bias, the realignment for the Al2 O3 /GaN heterojunction work function is used. However, the reduced barrier height 355

340 generates a long tunneling distance in the scale of ∼200 nm, also generates an increased leakage current. Poor ON-state 356

341 which effectively suppresses the DT process of electrons. performance can be found for the actual MIS-TMBS rectifier 357

342 Moreover, the 1-nm Al2 O3 insulator can increase the effective with Pt Schottky electrode, which can be well attributed to the 358

343 barrier height (qϕS + qϕT ), and as a result, the reverse leakage fact that increased barrier height shall weaken the TE process. 359

344 current is significantly reduced. Such a big energy mismatch between Pt and Al2 O3 /GaN may 360

345 Fig. 12(a) and (b) shows that when compared with the ideal also increase the tunneling width and causes a reduced DT 361

346 TMBS rectifier, the forward current density within the biased process. Note that Fig. 12(a) also shows the multiple steps in 362

347 range and VON has less significant variation for the actual MIS- the current when the applied bias is smaller than the turn-on 363

348 TMBS rectifiers when Au and Ni are used as the Schottky voltage, especially in the case of Pt-based Schottky contact. 364

349 electrode. Note that the metal work functions are set to 4.55, This indicates that when the Al2 O3 thin layer is adopted, 365

350 5.10, 5.15, and 5.65 eV for W, Au, Ni, and Pt, respectively. a much more significant trap-assisted tunneling effect takes 366

351 The actual MIS-TMBS rectifier with W electrode shows an place [38], [39]. Thus, our carrier transport model in the 367

352 improved forward characteristic, i.e., the increased current Schottky contact region is valid. 368

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HUANG et al.: MIS-BASED GaN SBDs: INTERFACIAL CONDITIONS 7

trap density can reduce qϕS and results in decreased VON , 410

increased leakage current, and premature breakdown. This 411

is because the positively charged donor-type state increases 412

the surface electric field magnitude at the Schottky interface, 413

which reduces the barrier height and decreases the turn-on 414

voltage. Besides that, the enhanced TE process and the trap- 415

related tunneling process also significantly decrease the BV. 416

On the other hand, acceptor-type states are negative after 417

capturing electrons, which is very helpful to increase the 418

Schottky barrier height and decrease the leakage current. 419

Correspondingly, the BV can be enhanced due to the reduced 420

surface electric field magnitude at the Schottky interface. For 421

the sidewall traps, the donor-type sidewall traps have less 422
Fig. 14. 2-D leakage current profiles for (a) ideal TMBS rectifier and
(b) actual MIS-TMBS rectifier. Results are calculated at a reverse bias impact on the forward characteristics. However, because of the 423

of 900 V, and the Schottky electrode is Ni. negative polarity after the acceptor-type sidewall traps capture 424

electrons, the current spreading effect in the mesa region can 425
369 Fig. 13(a) also reveals that a lower leakage current is be decreased. Hence, the increased specific-ON resistance will 426
370 obtained for the actual MIS-TMBS rectifiers even if the W be generated. Nevertheless, such negative polarity on the mesa 427
371 electrode is adopted when compared to the ideal TMBS recti- sidewalls enhances the charge-coupling effect, thus increasing 428
372 fiers, which can be attributed to the higher barrier (qϕS + qϕT ) the BV. To suppress the influence of the surface traps on 429
373 at the contact interface according to the previous discussion. the electrical properties, a GaN-based MIS-TMBS rectifier is 430
374 Meanwhile, the donor-type traps can significantly regulate the proposed and studied. The existence of a higher contact barrier 431
375 Schottky barrier, and this, rather than the work function for the (qϕS + qϕT ) for the MIS-TMBS rectifier shall result in a low 432
376 Schottky metal, is the main factor affecting the leakage current. leakage current, then reducing the contribution to the impact 433
377 However, the leakage current can be markedly reduced when ionization process in the drift layer and remarkably increasing 434
378 the Schottky metals with large function (e.g., Pt) are applied the BV. We also show that more freedom can be offered 435
379 to the actual MIS-TMBS rectifiers [see Fig. 13(a) and (b)]. when choosing the Schottky contact electrode for the MIS- 436
380 We believe that the addition qϕT of 1.1 eV makes a major TMBS rectifier. We believe that our systematic research on 437
381 contribution to the reduced leakage current in Fig. 13(b). the interfacial conditions of GaN-based TMBS rectifiers will 438
382 We can also find that the value of BV can be markedly provide useful physical insight into the design and fabrication 439
383 increased for the actual MIS-TMBS rectifier, as shown in of current power diodes. 440
384 Fig. 13(a), e.g., the BV is ∼3200 V for all the MIS-TMBS
385 rectifiers in spite of the presence of the donor-type traps and
386 the value is ∼1200 V for the ideal TMBS rectifiers. Fig. 13(c) R EFERENCES 441

387 also shows that the electric field magnitude at the Schottky
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8 IEEE TRANSACTIONS ON ELECTRON DEVICES

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