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25TTS08 Vishay 1
25TTS08 Vishay 1
DESCRIPTION/FEATURES
2
(A) The 25TTS... High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
TO-220AB 1 (K) (G) 3
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
PRODUCT SUMMARY available in identical package outlines.
VT at 16 A < 1.25 V
ITSM 300 A
This product has been designed and qualified for industrial
level.
VRRM 800/1200 V
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK VDRM, MAXIMUM PEAK IRRM/IDRM
PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 °C
V V mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0
W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C 45 mA
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
Maximum required DC gate
VGT Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
voltage to trigger V
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD 0.25
TJ = 125 °C, VDRM = Rated value
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
Typical reverse recovery time trr 4 µs
TJ = 125 °C
Typical turn-off time tq 110
25TTS08
Marking device Case style TO-220AB
25TTS12
130 35
25TTS.. Series DC
180°
120°
120 90°
Temperature (°C)
25
Ø
10 Conduction period
100 180°
5 25TTS.. Series
90°
TJ = 125 °C
30° 60° 120°
90 0
0 5 10 15 20 0 5 10 15 20 25 30
350
130
At any rated load condition and with
25TTS.. Series rated VRRM applied following surge
RthJC (DC) = 1.1 °C/W
Maximum Allowable Case
Initial TJ = 125 °C
On-State Current (A)
120 Peak Half Sine Wave
300
at 60 Hz 0.0083 s
Temperature (°C)
at 50 Hz 0.0100 s
110 Ø
Conduction period
250
100
200
30°
90 120°
60° DC 25TTS.. Series
180°
90° 150
80
1 10 100
0 5 10 15 20 25 30
25 400
Maximum non-repetitive surge current
versus pulse train duration. Control
Maximum Average On-State
120°
Power Loss (W)
1000
TJ = 25 °C
TJ = 125 °C
10
25TTS.. Series
1
0 1 2 3 4 5
100
Rectangular gate pulse (1) PGM = 40 W, tp = 1 ms
Instantaneous Gate Voltage (V)
1
(4) (3) (2) (1)
VGD
IGD Frequency limited by PG(AV)
25TTS.. Series
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
10
Thermal Impedance (°C/W)
0.1 D = 0.50
D = 0.33
D = 0.25 25TTS.. Series
Single pulse
D = 0.17
D = 0.08
0.01
0.0001 0.001 0.01 0.1 1 10
Device code 25 T T S 12 -
1 2 3 4 5 6
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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