16 MB

NANO-RAM
 Sri Srinivasa Educational and Charitable Trust®

SAPTHAGIRI COLLEGE OF ENGINEERING

(Affiliated to VTU, Belagavi, and Recognized by AICTE, New Delhi)
(Accrediated by NAAC with “A” Grade), (Accredited by NBA)
(ISO 9001-2015 and 14001-2015 Certified Institute)
Bengaluru-560057, Karnataka, India.

DEPARTMENT OF ELECTRONICS & COMMUNICATION

ENGINEERING
Technical seminar presentation
on
16 MB NANO RAM
Under the coordination of :

Prof. RAVI SHANKARA MN

Associate Professor, Dept. of ECE,SCE
Presented By:
RUTHVIK GOWDA H Guided by: Prof. VEENA N
[1SG19EC081] Assistant Professor, Dept. of ECE,SCE
 INTRODUCTION TO NANO RAM
• Nanotechnology is a field of science and engineering that focuses on
the design, synthesis, characterization, and application of materials
and devices at the nanoscale level. The prefix "nano" refers to one
billionth of a meter (10^-9 meters), which is roughly the size of atoms
and molecules.
• Nano-RAM (NRAM) is a type of computer memory that is based on
nanotechnology. It uses nanoscale materials, such as carbon nanotubes
or nanowires, to store data.
• NRAM is a promising alternative to existing memory technologies,
such as dynamic random access memory (DRAM) and flash memory,
due to its high speed, low power consumption, and durability.
 SYSNTHESIS OF NANO RAM
• The synthesis of Nano-RAM (NRAM) involves the fabrication of
nanoscale materials, such as carbon nanotubes or nanowires, and the
integration of these materials into memory devices. The specific
synthesis process for NRAM can vary depending on the type of
nanomaterial used and the desired properties of the final memory
device.
• For carbon nanotube NRAM, the synthesis process typically involves
growing carbon nanotubes on a substrate using a chemical vapor
deposition (CVD) process.
• The nanotubes are then coated with a layer of metal, such as tungsten
or titanium, to serve as the contact for the memory device. The metal
layer is then patterned using lithography to create the individual
memory cells.
 SYSNTHESIS OF NANO RAM

• The nanowire NRAM synthesis process typically involves growing

nanowires on a substrate using a CVD process or electroplating. The
nanowires are then coated with a layer of dielectric material to serve as
the insulator for the memory device. The metal contacts are then
deposited on the ends of the nanowires using lithography to create the
individual memory cells.
• Once the nanomaterials have been fabricated and integrated into
memory devices, the devices must undergo testing and optimization to
ensure that they meet the desired specifications for performance,
energy efficiency, and durability
 TYPES OF NANO RAM

NANO RAM

CARBON
NANOWIRE
NANOTUBE
NANO RAM
NANO RAM
 INTRODUCTION TO CARBON NANOTUBE NRAM

• In this type of NRAM, data is stored by manipulating the position of a

small piece of metal inside a carbon nanotube. The nanotubes are
arranged in a dense grid to form a memory array. Carbon nanotube
NRAM is highly energy-efficient, fast, and durable.

• It has the potential to achieve

high storage densities, making it
well-suited for use in
applications that require large
amounts of storage in a small
space.
 INTRODUCTION TO NANOWIRE NRAM

• Nano-RAM (NRAM) is a type of computer memory that is based on

nanotechnology. It is a promising alternative to existing memory
technologies such as Dynamic Random Access Memory (DRAM) and
Flash Memory.
• NRAM uses carbon nanotubes
or nanowires to store data.
These nanotubes or nanowires
are very small - on the order of a
few nanometres in diameter.
They are arranged in a dense
grid to form a memory array.
 WORKING OF NANO RAM
• For carbon nanotube NRAM, data is stored by manipulating the position
of a small piece of metal inside a carbon nanotube. When an electrical
voltage is applied to the nanotube, the metal piece is attracted to one end
of the nanotube, creating a low resistance pathway for the flow of
current. This represents a binary "1" state. Conversely, when the voltage
is removed, the metal piece returns to its original position, creating a
high resistance pathway and representing a binary "0" state.
• For nanowire NRAM, data is stored by changing the resistance of a
nanowire. When an electrical voltage is applied to the nanowire, the
resistance of the wire changes depending on the direction of the current
flow. This change in resistance can be used to represent a binary "1" or
"0" state.
 WORKING OF NANO RAM
• In both types of NRAM, the data is stored in a non-volatile manner,
meaning that it is retained even when the power is turned off. This is
because the position of the metal piece in carbon nanotube NRAM or
the resistance of the nanowire in nanowire NRAM is stable over time
and is not affected by the absence of an electrical voltage.
 FEATURES OF NANORAM
1.Non-Volatile Memory: NRAM is a non-volatile memory technology,
meaning that it retains data even when power is turned off. This makes it
ideal for use in applications that require persistent and reliable data storage,
such as computer hard drives, solid-state drives (SSDs), and digital
cameras.
2.High Speed: NRAM has a very high speed compared to other types of
memory, such as dynamic random access memory (DRAM) and flash
memory. NRAM can read and write data much faster than DRAM or flash
memory, which can improve overall system performance.
3.Low Power Consumption: NRAM requires less power than DRAM or flash
memory. This is because NRAM does not require the same amount of
energy to maintain data as DRAM does, and it does not require the high
voltage programming required by flash memory. As a result, NRAM can
improve energy efficiency and battery life in mobile devices.
 FEATURES OF NANORAM
4.Compatibility: NRAM is designed to be compatible with existing semiconductor
fabrication processes, which makes it easier to integrate into existing memory
devices and systems.
5.Scalability: NRAM can be scaled down to nanoscale sizes, which makes it ideal
for use in applications that require small, compact memory devices, such as
smartphones, wearable devices, and Internet of Things (IoT) devices.
6.Radiation Tolerance: NRAM is more tolerant to radiation than other memory
technologies, such as DRAM or flash memory. This makes it ideal for use in
aerospace and military applications, where radiation exposure is a concern.
7.Durability: NRAM is more durable than flash memory. This is because NRAM
can handle more write cycles before it wears out. This means that NRAM can be
used in applications where frequent and extensive data writing is required, such as
data centres or high-performance computing.
 FEATURES OF NANORAM
8.High Density: NRAM has the potential to provide higher density memory
storage compared to DRAM or flash memory. This is because NRAM can
be built in 3D structures, where multiple layers of memory cells can be
stacked on top of each other. This allows for more memory storage in the
same physical space.
9.Low Latency: NRAM has a very low latency, meaning that it can access
data quickly. This makes it ideal for use in applications that require real-
time data processing, such as high-speed trading, artificial intelligence (AI),
and machine learning (ML).
10.Security: NRAM has the potential to provide a more secure memory
solution compared to existing memory technologies. This is because NRAM
can be designed with built-in encryption and decryption capabilities, which
can help to protect sensitive data from unauthorized access.
 ADVANTAGES OF NANORAM
1. High Speed
2. Non-Volatile
3. Low Power Consumption
4. High Density
5. Durability
6. Compatibility
7. Radiation Tolerance
8. Temperature Resistant
9. Compatibility with CMOS
10. Low Interference
 DISADVANTAGES OF NANORAM
1. Cost
2. Production Complexity
3. Limited Commercial Availability
4. Development Challenges
5. Limited Capacity
6. Limited Availability of Raw Materials
7. Limited Commercial Support
8. Sensitivity to Magnetic Fields
9. Memory Access Mechanism
10. Limited Market Demand
 DIFFERENT TYPES OF NANO RAM COMPARED
BASED ON SEVERAL PARAMETERS
DRAM PCRAM RRAM MRAM FRAM
Non-Volatile No Yes Yes Yes Yes
Technology 3x nm 4x nm 5x nm 130 nm 180 nm
node
Granularity Small Small Small Small Large
Software Easy Easy Easy Easy Easy
Write 2.5 3 3 1.8 0.6
Operation
Voltage (V)
Write Time < 10 ns 50 ns < 5 ns < 100 ns 20 ns
Erase Time < 10 ns 120 ns < 5 ns < 100 ns 20 ns
Read Time < 10 ns < 60 ns < 10 ns < 20 ns 20 ns
Endurance > 3E16 1E15 1E12 > 3E16 1E14
 CONCLUSION
NRAM is still in the development stage and has
yet to be widely adopted. NRAM holds great
promise for future memory technologies due to its
potential speed, durability, and energy efficiency.
NRAM could be used in a variety of computing
devices, such as smartphones, tablets, laptops, or
servers, to help speed up processing times and
improve overall performance.
THANK YOU ..