EXPERIMENT NO.

10
Aim: To design and simulate CMOS Inverter using Symica.
Tool used: Symica_3.1.0.0209_x86
Theory:
CMOS, complementary metal-oxide-semiconductor, also called COS-
MOS (complementary-symmetry metal-oxide-semiconductor), is a
type of MOSFET (metal-oxide-semiconductor field-effect transistor).
Its fabrication process makes use of complementary and symmetrical
pairs of p-type and n-type MOSFETs for logic functions.

Fig 10.1: CMOS inverter circuit

The general CMOS inverter structure is the combination of both the
PMOS & NMOS transistors where the pMOS is arranged at the top &
nMOS is arranged at the bottom.
When the low input voltage is given to the CMOS inverter, then the
PMOS transistor is switched ON whereas the NMOS transistor will
switch OFF by allowing the flow of electrons throughout the gate
terminal & generating high logic output voltage.
Similarly, when the high input voltage is given to the CMOS inverter
then, the PMOS transistor is switched OFF whereas the NMOS
transistor will be switched ON avoiding as many electrons from
attaining the output voltage & generating low logic output voltage.
Simulation Schematic:

Fig 10.2: Schematic diagram made in Symica

Simulation Output:

Fig 10.3: Simulation output

Result:
CMOS inverter was successfully designed in Symica and the simulation results
were observed.