IGEE /UMBB 2023/EE242L

LAB EXPERIMENT N°17

E-MOSFET: Switching mode

Purpose:
 This experiment aims to use the n-channel
Enhancement-MOSFET in switching mode.

Part 1:

Construct the circuits shown in Fig.1. With VDD=12V, R=1K.

E-MOSFET: 2N7000, The peak voltage of the squared signal is
VGS peak =5V and a frequency of 1Hz.
1. Observe the indication of the LED, decrease and increase the
frequency, what do you remark?
2. Observe and sketch the gate voltage and the drain voltage
waveforms (Draw VG and VD in the same graph).
3. Now, decrease the frequency (<1Hz), record, in table 1,
the voltage VDS and the current ID (VR/R) during the “ON and
OFF” state of the LED.
4. From the previous results (ON state), deduce the resistance of
the E-MOSFET RDS=VDS/ ID. What do you remark?

Table 1:

LED ON OFF
VDS Fig.1

ID

Part 2:

Construct the circuits shown in Fig.2. with VDD=12V, R=1K.

E-MOSFET: 2N7000, The peak voltage of the squared signal is
VGS peak =5V and a frequency of 1Hz.
1. Observe the indication of the LED, decrease and increase
the frequency, what do you remark?
2. Observe and sketch the gate voltage and the drain voltage
waveforms (Draw VG and VD in the same graph).
3. Compare the signals waveforms (VG and VD) of Part 1 with
the signals waveforms of Part 2, what do you remark?
Fig.2