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TOBB ETU Department of ELE


ELE 224L Electronic Circuits
Experiment 4 – MOSFET Circuits
PURPOSE:

 The purpose of this experiment is learning the operation principle of MOSFETs and
understanding DC biasing methods of MOSFET circuits. In addition, you will see an example of
CMOS logic.
 Do not forget to submit your oscilloscope screenshots to the course assistants with the report.

EXPERIMENT:
1. Voltage-Current characteristic of MOSFET: Construct the circuit given in Figure 1 by using
RG1 = 100kΩ and RG2 = 27kΩ.

Figure 1: MOSFET circuit

a) Apply a constant 5V to VDD and apply an adjustable voltage to VGG from the voltage source.

 Make the measurement according to Table 1 and plot IDS – VGS characteristics. Voltage
source, used for VDD, can be used as an ammeter with 10mA resolution. However, be careful
not to exceed the maximum continuous drain current that your MOSFET can handle.
 Measure VTH voltage and calculate KN values of the MOSFET.

Table 1: ID vs. VGS measurements of MOSFET

IDS (mA) 0 10 20 50 100


VGS (V) 0 VTH=__ 3 4 5

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Figure 2: ID - VGS characteristics of MOSFET

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b) For this time hold the value of VGS - VTH on 0.5V, 1V and 2V constant values, respectively.
 Make the measeruments to complete Table 2 and plot ID – VDS curves onto Figure 3.
 Determine the region that transistor operates on Figure 3.

Table 2: ID - VDS characteristics of MOSFET for different VGS voltages

VGS-VTH VDS (V) 0 0.2 0.5 1 2 3 4 5 6 8 10


0.5V ID (mA)
1V ID (mA)
2V ID (mA)

Figure 3: ID-VDS characteristics of MOSFET for different VGS voltages

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2. Construct the circuit given in Figure 4.


a) Apply 5V to VDD to find VI and VO voltage curve.
 Adjust VI voltage from 0V to 5V range and measure the VO voltage to fill Table 3.
 Plot VI-VO curve onto Figure 5 and show the operation regions of MOSFETs for each.
What logic operation does the circuit do?

Table 3:VI - VO characteristics

VI (V) 0 1 1.5 1.75 2 2.25 2.5 2.75 3 4 5


VO (V)

Figure 4: A MOSFET circuit

Figure 5: VI - VO characteristics

b) Apply 2.5 + 2.5sin(2πft) V sinusoidal voltage at 1KHz frequency by signal generator. Use
“Offset” property of signal generator and do not forget to check the signals voltage level by
oscillator.
 Change (increase or decrease) the offset value and observe the changes for output voltage.
 Using display menu of oscilloscope observe VI vs. VO curve and plot on Figure 7.
 Increase the frequency of the signal, observe and note down the difference if any occurs.

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Figure 6: Time vs. VI and VO signals

Figure 7: VI-VO characteristics observed by oscillator

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