POWER ELECTRONICS LAB MANUAL

Circuit Diagram:

Fig. 3: Circuit diagram for MOSFET Characteristics

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b) Study of MOSFET Characteristics

Aim: To obtain the various characteristics of MOSFET.
Apparatus Required:
Table 4

S. No. Name of the equipment Range Qty

Theory:
A metal oxide semiconductor field effect transistor is a recent device developed by
combining the areas of field effect concept and technology. It has three terminals called
drain, source and gate. MOSFET is a voltage controlled device. As its operation depends
upon the flow of majority carriers only, MOSFET is uni polar device. The control signal or
gate current less than a BJT. This is because of fact that gate circuit impedance in MOSFET
is very high of the order of 109 Ω. This larger impedance permits the MOSFET gate be driven
directly from microelectronic circuits. Power MOSFETs are now finding increasing
applications in low-power high frequency converters.
The transfer characteristics of MOSFET shows the variation of drain current ID as a
fuction of gate to source voltage VGS. The device is in OFF state upto some voltage called
threshold device voltage. The output characteristics of Power MOSFET indicate the variation
of Drain current ID as a function of Drain source voltage VDS as a parameter. This device
combines into advantages of IGBT and BJT.
Procedure:
Transfer Characteristics:
1. Make all connections as per the circuit diagram.
2. Switch on the regulated power supply. Keep VDS constant say 10V. Vary VGS
in steps and note down the corresponding drain current ID
3. Tabulate the readings in the table.
4. Plot a graph of ID against VGS.

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Observations:
Table 5: Output Characteristics Table 6: Transfer Characteristics

VGS1 VGS2 VDS

S.
No. VDS (V) ID(mA) VDS (V) ID(mA) VGS (V) ID(mA)

Model output waveforms:

Transfer Characteristics: Output Characteristics:

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Output Characteristics:
1. Make the connections as shown in the circuit diagram.
2. Initially set VGS to some value say 10V.
3. Slowly vary VDS and note down the values of ID and VDS.
4. At particular value of VGS there a pinch off voltage between drain and source. If
VDS< VP device works in the constant resistance region and I D is directly
proportional to VDS. If VDS>VP device works in the constant current region.
5. Repeat above procedure for different values of VGS and draw graph between ID
and VDS.

Precautions:
 Before powering the circuits, check for all the connections of the circuit and scope
connection. This avoids shorting or any ground looping that may lead to electrical
shocks or damage of equipment.
 Let the load be connected at the output for some time, so that it helps to discharge
capacitor or inductor if any, completely.
 Avoid using long wires that may get in your way while making adjustments or
changing leads.
 Check any connections for shorting two different voltage levels.
 Apply low voltages or low power to check proper functionality of circuits.

Result: From the Transfer Characteristics,

Minimum gate to source threshold voltage = volts
Output Characteristics at different Gate to Source Voltages are observed.

Viva-voce:
1. What is the difference between MOSFET and BJT?

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2. What are the two types of MOSFET?

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3. How are MOSFETs suitable for low power high frequency applications?

4. What are the merits of MOSFET?

5. What are demerits of MOSFET?

6. What are the applications of MOSFET?

Remarks
Signature of the faculty

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Circuit Diagram:

Fig. 6: Circuit diagram for IGBT characteristics

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c) Study of IGBT Characteristics

Aim: To obtain the Output and Transfer Characteristics of IGBT.
Apparatus Required:
Table 7
S.No. Name of the equipment Range Qty

Theory:
It is a new development in the area of power MOSFET technology. This device
combines in to advantages of both MOSFET and BJT. So an IGBT has high input impedance
like as MOSFET and low ON state power like BJT. Further IGBT is free from second
breakdown problem present in BJT. IGBT is also known as metal oxide insulated gate
transistor.
It was also called as insulated gate transistor. The static characteristics or output
characteristics of IGBT shows plot of collector current I C vs collector –emitter voltage VCE for
various values of gate emitter voltage. In the forward direction the shape of output
characteristics is similar to that of BJT and have the controlling parameter is gate-emitter
voltage VGE because IGBT is a voltage controlled device. The device developed by combining
the areas of field effect concept and technology.
Procedure:
Transfer Characteristics:
1. Make all connections as per the circuit diagram.
2. Initially keep V1 & V2 at minimum position and R1 & R2 middle position.
3. Set VCE to some say 10V.
4. Slowly vary gate emitter voltage VGE by varying V1.
5. Note down IC and VGE readings for each step.
6. Repeat above procedure for 20V & 25V of VCE and plot the graph between IC
& VGE.

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Tabular Column:
Table No. 8 Output Characteristics
S. No. VGE1 VGE2
VCE (V) IC (mA) VCE (V) IC (mA)

Table No. 9 Transfer Characteristics

VCE
VGE (V) IC (mA)

Model output waveforms:

Collector Characteristics : Transfer Characteristics:

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Output Characteristics:
1. Initially set VGE to some value say 5V by varying V2.
2. Slowly vary V2 and note down IC and VCE readings.
3. At particular value of VCE there will be a pinch off voltage VP between collector and
emitter.
4. Repeat above procedure for different values of VGE and draw graph between IC and VGE.
Precautions:
 Before powering the circuits, check for all the connections of the circuit and scope
connection. This avoids shorting or any ground looping that may lead to electrical
shocks or damage of equipment.
 Let the load be connected at the output for some time, so that it helps to discharge
capacitor or inductor if any, completely.
 Avoid using long wires that may get in your way while making adjustments or
changing leads.
 Check any connections for shorting two different voltage levels.
 Apply low voltages or low power to check proper functionality of circuits.

Result: From Transfer Characteristics, Transfer resistance= ΔVGE÷ΔIC =

Output characteristics at different gate to emitter voltages(VGE ) are observed.

Viva Voce:
1. In what way IGBT is more advantageous than BJT and MOSFET?

2. What are merits of IGBT?

3. What are demerits of IGBT?

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