Basic Electronics

Chapter 3rd – Bipolar Junction Transistor

Lecture 11th Notes -: UR Engineering Friend

Unipolar Devices

In basic electronics, unipolar devices are electronic devices that conduct current using only
one type of charge carrier (either electrons or holes), while bipolar devices use both types of
charge carriers.

The most common type of unipolar device is the field-effect transistor (FET), which comes in
two main types: the junction FET (JFET) and the metal-oxide-semiconductor FET
(MOSFET). In JFETs, the current is controlled by the voltage applied across a reverse-biased
junction, while in MOSFETs, it is controlled by the voltage applied to a metal gate separated
from the semiconductor channel by a thin oxide layer.

Unipolar devices have several advantages over bipolar devices, including high input
impedance, low noise, and high switching speeds. They are widely used in applications such
as amplifiers, oscillators, and digital circuits.
Bipolar Devices

➢ In basic electronics, bipolar devices are electronic devices that conduct current using
both types of charge carriers (electrons and holes). The two main types of bipolar
devices are bipolar junction transistors (BJTs) and thyristors.
➢ BJTs consist of three layers of semiconductor material, with two p-n junctions. They
have three terminals: the base, the emitter, and the collector. By controlling the
current flowing into the base terminal, the current flowing between the emitter and
collector can be amplified. BJTs are widely used in applications such as amplifiers,
switches, and oscillators.
➢ Thyristors are four-layer devices that consist of two p-n junctions. They have three
terminals: the anode, the cathode, and the gate. By applying a voltage to the gate
terminal, the device can be turned on and will conduct current until the voltage across
it drops to a certain level. Thyristors are used in applications such as power control,
rectification, and AC voltage regulation.
➢ Bipolar devices have several advantages over unipolar devices, including high power
handling capability and high gain. However, they also have disadvantages, such as
higher noise levels and slower switching speeds.

NPN Transistor

An NPN transistor is a type of bipolar junction transistor (BJT) that consists of three doped
semiconductor layers: a p-type layer sandwiched between two n-type layers. The three
regions are called the emitter, base, and collector, and the transistor is constructed in a way
that allows current to flow from the emitter to the collector when a small current is applied to
the base.
In an NPN transistor, the emitter is heavily doped with an n-type impurity, while the base is
lightly doped with a p-type impurity, and the collector is moderately doped with an n-type
impurity. When a voltage is applied to the base terminal, it creates a small current that flows
between the emitter and the base. This current, in turn, causes a much larger current to flow
between the collector and the emitter.

NPN transistors are widely used in electronic circuits for amplification and switching
purposes. They are often used in audio amplifiers, power supplies, and digital logic circuits.
The symbol for an NPN transistor in a circuit diagram is shown as a triangle with an arrow
pointing inward, representing the emitter, and two lines coming out, representing the
collector and base.

Symbol of NPN Transistor

Construction of NPN Transistor

➢ An NPN transistor is constructed from three doped semiconductor layers: a thin p-

type layer sandwiched between two thicker n-type layers. The p-type layer is called
the base, while the n-type layers are the emitter and the collector.
 ➢ The construction of an NPN transistor involves a process called doping, which
involves introducing impurities (atoms of another element) into the semiconductor
material to create regions with an excess or a deficiency of electrons. In the case of an
NPN transistor, the base region is doped with a p-type impurity (such as boron), while
the emitter and collector regions are doped with an n-type impurity (such as
phosphorus). The doping process is carefully controlled to create the desired
properties and characteristics of the transistor.

➢ Once the layers have been doped, the next step in constructing an NPN transistor
involves adding metal contacts to the three terminals (emitter, base, and collector) so
that electrical connections can be made to the transistor. This is typically done by
depositing thin layers of metal onto the semiconductor surface and then selectively
etching away the metal to leave only the desired contacts.
➢ Finally, the transistor is encapsulated in a protective package to shield it from damage
and to provide electrical isolation. The package typically has three leads or pins that
correspond to the emitter, base, and collector terminals, and may have additional pins
for other purposes (such as heat dissipation).
➢ The exact construction of an NPN transistor can vary depending on the specific
manufacturing process used, but the basic principles and steps involved are similar.

Working of NPN Transistor

1. The working of an NPN transistor can be explained using the concept of current
amplification. An NPN transistor is a three-layer semiconductor device that has two
 p-n junctions. It consists of a thin p-type semiconductor layer sandwiched between
two thicker n-type semiconductor layers. The three regions are called the emitter,
base, and collector.
2. When a voltage is applied to the base terminal, a small current flow between the
emitter and the base. This current causes a larger current to flow between the collector
and the emitter. The transistor works by controlling the flow of electrons from the
emitter to the collector, which is regulated by the small current flowing into the base.
3. In the NPN transistor, the emitter is heavily doped with an n-type impurity, while the
base is lightly doped with a p-type impurity, and the collector is moderately doped
with an n-type impurity. The emitter-base junction is forward-biased, which means
that a small current can flow from the emitter to the base. However, the collector-base
junction is reverse-biased, which means that there is no current flow between the
collector and the base.
4. When a small current flows into the base, it creates an excess of holes in the base
region. These holes diffuse towards the collector, where they combine with electrons
and form a current that flows out of the collector. The emitter supplies the electrons
that combine with the holes in the base to form the collector current.
5. The ratio of the collector current to the base current is known as the current gain or β
of the transistor. This gain can be controlled by changing the voltage applied to the
base, which in turn controls the amount of current flowing from the emitter to the
collector. The NPN transistor is widely used in electronic circuits for amplification
and switching purposes.