MODULE 5 SEMICONDUCTORS

electrical machines mod very imp

PN Junction applications BIT

Zener diode Mosfet
operational Amplifier intro
Semiconductor materials Group II
si i ter
Ge Si no of walance e Ge O GeV
covalent
at OKTbecome pure bonding
insulator
random movement of e
whole
Intrinsic semiconductor extrinsic semiconductor doping
trivalent

P type N
Type SM

adding trivalent impurity adding pentavalent

to
to SM
pure
Semiconduc or
impurity
Heavily doped lightly doped
Plenty holes only few
e
of

PN Junction diode
I write paragraph
schema ic
explaining
a
working
diagram
Barrier potential
depletion
req
positive
external
we
voltage
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forward biased Reverse biased
Thermal
Runaway
Permanent damage to jn

Zener diode
only diff
amore
to
holes
print is
heavily doped more é

PN
f zener

circuits
Rectifier
changes AC to DC
DC but not pure DC
pulsating DC
23105123 TUE 8AM
APPLICATION OF PN IN diode Zener diode

DC power Supply
Transformer Rectifier Filter Voltage
c I 2 3 Regulator
in

230W
10 50h2 AC Supply
Need transformer to step down the voltage
Step down transformer 230160
Rectifier converts Ac into pulsating dc
vet Thas inductor L capacitor C

Rectifier
ve Si diode starts conducting at O.TV
petty Ge diode starts conducting at 0.311

Hit Application
i in FB closed
ii in RB open
of diode
switch
switch

FB Char diode For half wave rectifier ripple factor is than full war

LLInst
FULL WAVE RECTIFIER
p forward Da reversed
DI tuputworm

n
E m.am It form Di Da Di Da Di D2 D

D2
Centre tapped transformer required is a bulky transformer
How work Working

Bridge Rectifier
working

Ii
Inputworm

In
Dz
R
It form air babe Diaz Dare Dia BD Die

PIV rating no need of centretapped transformer

needs to withstand very high revI without breaking

Zener Shunt Voltage regulator

NETTIE is Iaconst

I IZ changes

Ean of this circuit vine Is Rs vz Is Iz IL

line Vin M ISPs drop M Z in Ist

Regulation
Vint IsRs drop I Iz I
Load Regulation RLM ILL 129
BLK ILM Iz
Bipolar Junction Transistor BIT

F pl I

BYE BY
Collector Base In arrow signifies the dir of flow of current
Emmiter Base Jn

25 05 23 THU 9AM

input
output

EXN
brent amplification
Input output
B IE Ie IE IB Ie
Ie
IE n
CE JB Base
CC IB IE Emmites
is always
heavily
doped
CB CE
IBTICITE
X amplifier
29 05 23 MON 1050AM

Field Effect Transistor FET

ENMOS EPHOS
MOSFET metal oxide FET

I
P MOSFET
G gate
Depletion type N mosfet g t's D drain

P MOSFET
ants
normally on apply gate bias to switch it off
what is gate bias

Construction details of E Nmosfet

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ftp.T e
Substrate
insulated ever

Working

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Depletion type

Characteristics of Mosfet
i Drain Characteristics VDS VIP
ii Transfer characteristics VGS V ID
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the current
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Substrate Is
operational Amplifier last topic

tE Closed loop
why it can be useto do many math op on signals
inverting non inverting amplifier