1C V-I characteristics of Diode

V-I Characteristics of diode
1
Voltage-current characteristics of Diode
After completing this section you should be
able to
Analyze the voltage-current (V-I) characteristics
curve of diode.
Explain the forward-bias portion of the V-I
characteristics
Explain the reverse-bias portion of the V-I
characteristics.
Identify the barrier potential.
Identify the breakdown voltage.
Discuss temperature effect on a diode.
2
Symbol of p-n junction Diode
The arrowhead symbol points in the direction of

conventional current through the device
This current will flow through the diode if and only if an
external voltage source is connected to it with appropriate
polarities.
P-side N-side
Anode Cathode
P N
Anode Cathode
p-n junction forms a semiconductor diode Circuit symbol of a diode

3
Biasing of p-n junction Diode
When a p-n junction is formed, the depletion region gets

created and the movement of electrons and holes are
stops.
Thus the current flowing through an unbiased p-n
junction is zero. To make the current to flow we have to
bias the p-n junction diode.
Biasing is the process of applying external DC voltage to
the semiconductor diode.
The biasing can be of two types:
1. Forward bias,
4
2. Reverse bias.
Forward biasing of a p-n junction Diode
Anode Cathode Anode Cathode

P N
Current IF
IF
Limiting
resistor
+ - + -
V
V
Forward biasing of diode Symbolic representation
5
Forward biasing of a p-n junction Diode
6
V-I Characteristics for Forward bias
The forward
characteristics is divided
into two portions, AB
and BC as shown in
figure.
7
 Region A to B
 In the region A and B of the

forward characteristics shown
in figure the forward voltage is
small and less than the cut in
voltage (knee voltage).
 Therefore the forward current

flowing through the diode is
small.
 With further increase in the

forward voltage , it reaches the
level of the cut in voltage and
the width of depletion region
goes decreasing
8
Region B to C
As soon as the forward

voltage equals the cut in
voltage, current through
the diode increases
suddenly.
The nature of current is

exponential. The large
forward current in the
region B-C of the forward
characteristics is limited
by connecting a resistor
“R” in series with the
9 diode.
Dynamic resistance
figure (b) illustrates

how the dynamic
resistance r’d decreases
as you move up the
curve
r’ = ΔV /ΔI .
d F F
10
Reverse biasing of a p-n junction Diode
Anode Cathode Anode Cathode

P N
Current IR
IR
Limiting
resistor
- + - +
V V
Reverse biasing of diode Symbolic representation
11
V-I Characteristics for Reverse bias
 Reverse characteristics is a
graph of reverse voltage (VR)
(I0 ) versus reverse current (IR) as
Reverse shown in figure
saturation
Current
 Current flowing through the
diode in the reverse biased
state is the reverse saturation
current which flows due to
the minority carriers.
 Therefore it is treated as a
negative current. Hence the
reverse characteristics
appears in the third quadrant
as shown in figure.
12
Breakdown
 As the reverse voltage is increased, the reverse saturation
current remains constant equals to Io if the temperature is
constant.
 But as the reverse voltage reaches the breakdown voltage

value, a large current flows through the diode.
 Operation in the breakdown region should be avoided because

the diode may be damaged due to excessive power dissipation.
 Typically the reverse breakdown voltage for a p-n junction

diode is in the range of 50 to 100 V.
13
Current flow in reverse biased diode
P-region consist of a small number of electrons and
the n-region contain small number of holes. These are
the minority carriers which are generated thermally.
The minority electrons in the p-region is attracted

towards the positive end of the DC supply. Hence
these electrons will cross the junction and constitute
the reverse current IR of the diode.
The reverse current is also called as the “reverse

saturation current”.
The reverse saturation current is depends on the

temperature. It doubles its value for every 100C rise in
14 temperature
Important points about the reverse current
 It flows from cathode to anode.
15
important points about the reverse current
 It flows due to minority carriers.
16
 Its value is much smaller that of the forward current.
17
 Its value is much smaller that of the forward current.
 It is independent of the reverse voltage but dependent on the

temperature.
18
Resistance of reverse biased diode
 The reverse current is small which indicates that the resistance
offers by a reverse biased diode is very large. It is denoted by
RF and its value is few hundred KΩ.
19
Breakdown in the reverse biased diode
The reverse saturation current flowing in the reverse
bias diode is dependent only on the temperature and
independent of the reverse voltage applied externally.
However now we are going to learn the phenomenon

called reverse breakdown which takes place at a large
reverse voltage.
The breakdown in a reverse biased diode can take

place due to the following effects :
1. Avalanche effect and
20 2. Zener effect
Breakdown due to the avalanche effect
When a very large reverse voltage is applied to a diode the events
take place in the following sequence :
21
 Due to large reverse voltage the velocity of the minority
carriers will increase to a great extent. Therefore the kinetic
energy with them will also increase.
22
 While traveling, these minority carriers will collide with the
stationary atoms and impart some of the kinetic energy to the
valence electrons present in the covalent bonds.
23
 Due to additionally acquired energy, these valence electrons
will break the covalent bonds and jump into the conduction
band to become free for conduction.
24
 Now these free electrons will be accelerated and they knock
out some more valence electrons by means of collisions. This
“chain reaction” is called as “Avalanche effect”
25
 Now these free electrons will be accelerated and they knock
out some more valence electrons by means of collisions. This
“chain reaction” is called as “Avalanche effect”.
 In a very short time, a large number of free minority electrons
will be available for conduction and a large reverse current will
26 flow through the reverse biased diode. The Avalanche
breakdown does taken place.
Why should avoid Breakdown
At the time of the avalanche breakdown, a large
reverse voltage appears across the diode and a large
reverse current is flowing through it.
Therefore a large power gets dissipated in the diode.
The junction temperature of the diode may exceed its

safe limits and the diode will be damaged
permanently. Therefore the reverse breakdown should
always be avoided.
27
Breakdown due to the Zener effect
The reverse breakdown can take place due to another effect
called zener effect.
 Due to heavy doping of p and n-sides of the diode, the
depletion region is narrow in the reverse biased condition. All
the reverse voltage V appears across the depletion region.
28
 Therefore the electric field which is the voltage per unit
distance is very intense across the depletion region.
29
 This intense electric field can pull some of the valence
electrons by braking the covalent bonds. These electrons then
become free electrons.
30
 This intense electric field can pull some of the valence
electrons by braking the covalent bonds. These electrons then
become free electrons.
 A large number of such electrons can constitute a large reverse
current through the diode. This is called as the breakdown due
to zener effect.
31
Complete V-I Characteristics of a diode
IF
C
in mA
B
VR in volts A 0
Cut in voltage VF Volts
(I0 )
Reverse
Breakdown Reverse
Breakdown saturation
voltage
Current
Reverse
Current
IR in μA
32
Complete V-I Characteristics of Si and Ge diode
IF
in mA
Si
Breakdown
VR in
volts 0.7 VF Volts
(I0 ) in nA Cut in voltage
Reverse
Si Current
IR in μA
33
Complete V-I Characteristics of Si and Ge diode
IF
in mA
Ge
Si
Breakdown
VR in
volts 0.3 0.7 VF Volts
(I0 ) in nA Cut in voltage
(I0 ) in μA
Reverse
Si Current
Ge IR in μA
34
Temperature effects on the diode V-I characteristics
The blue curve is at
room temperature (250C)
and the red curve is at an
elevated temperature
(250C + ΔT ).
Notice that the barrier

potential decreases as
temperature increases.
35
Temperature effects on the diode V-I characteristics
For a reverse biased

diode, as temperature
increased, the reverse
current increases.
The difference in the

two curves exaggerated
on the graph in figure.
36
Mathematical expression for the diode current
1. The diode current ID has an exponential shape. It is

expressed as:
ID= IO [ e V / ηVt – 1]
37

expressed as:
ID= IO [ e V / ηVt – 1]
Where Io = reverse saturation current
38

expressed as:
ID= IO [ e V / ηVt – 1]

Vt = T/11,600 and it is called volt
equivalent of temperature
39

expressed as:
ID= IO [ e V / ηVt – 1]

Vt = T/11,600 and it is called volt
equivalent of temperature
η = 1 for germanium
= 2 for silicon
40
1. The diode current ID has an exponential shape. It is expressed

as:
ID= IO [ e V / ηVt – 1]

Vt = T/ 11,600 and it is called volt equivalent of
temperature
= 2 for silicon
41

expressed as:
ID= IO [ e V / ηVt – 1]

Vt = T/11,600 and it is called volt equivalent of
temperature
= 2 for silicon
T = temperature in OK
42 V = Voltage across the diode
Mathematical expression for the forward current (
IF )
2. The diode current IF has an exponential shape. It is

expressed as:
IF= IO [ e Vf / ηVt – 1]
if e Vf / ηVt > > 1 then

IF= IO e Vf / ηVt
this expression shows that the forward current is of

exponential nature
43
Mathematical expression for the reverse current
( IR )
substitute ID =IR and V= -VR in equation we get
IR= IO [ e -VR / ηVt – 1]
but e -VR / ηVt < < 1 then
IR= - IO
this expression shows that the reverse current I R of diode

is negative and constant , equals to Io (reverse
44
saturation current)

1C V-I characteristics of Diode

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V-I Characteristics of diode

The arrowhead symbol points in the direction of

p-n junction forms a semiconductor diode Circuit symbol of a diode

When a p-n junction is formed, the depletion region gets

Anode Cathode Anode Cathode

 In the region A and B of the

 Therefore the forward current

 With further increase in the

As soon as the forward

The nature of current is

figure (b) illustrates

Anode Cathode Anode Cathode

Reverse biasing of diode Symbolic representation

 But as the reverse voltage reaches the breakdown voltage

 Operation in the breakdown region should be avoided because

 Typically the reverse breakdown voltage for a p-n junction

The minority electrons in the p-region is attracted

The reverse current is also called as the “reverse

The reverse saturation current is depends on the

 It flows due to minority carriers.

 It flows due to minority carriers.

 Its value is much smaller that of the forward current.

 It flows due to minority carriers.

 Its value is much smaller that of the forward current.

 It is independent of the reverse voltage but dependent on the

However now we are going to learn the phenomenon

The breakdown in a reverse biased diode can take

Therefore a large power gets dissipated in the diode.

The junction temperature of the diode may exceed its

Notice that the barrier

For a reverse biased

The difference in the

1. The diode current ID has an exponential shape. It is

1. The diode current ID has an exponential shape. It is

Where Io = reverse saturation current

1. The diode current ID has an exponential shape. It is

Where Io = reverse saturation current

1. The diode current ID has an exponential shape. It is

Where Io = reverse saturation current

1. The diode current ID has an exponential shape. It is expressed

Where Io = reverse saturation current

1. The diode current ID has an exponential shape. It is

Where Io = reverse saturation current

2. The diode current IF has an exponential shape. It is

if e Vf / ηVt > > 1 then

this expression shows that the forward current is of

IR= IO [ e -VR / ηVt – 1]

but e -VR / ηVt < < 1 then

this expression shows that the reverse current I R of diode

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