Shivaji University , Kolhapur

Question Bank For Mar 2022 ( Summer ) Examination

Subject Code :_ 84860 Subject Name : Microwave Engineering

Common subject Code _ PCC-ETC801
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1. Progress in ________ and other related semiconductors material processing led to the
feasibility of monolithic microwave integrated circuits.
a) GaAs
b) Silicon
c) Germanium
d) GaAlAs

2. The substrate of an MMIC must be a _____________ to accommodate the fabrication

of all the type of devices.
a) Semiconductor
b) Insulator
c) Partial conductors
d) Metals operable at high frequencies

3. MMICs are high cost devices that involve complex fabrication methods and contain
multiple layers to contain even small circuits.
a) True
b) False

4. GaAs MESFETs are versatile device because it finds application in:

a) Low-noise amplifiers
b) High gain amplifiers
c) Mixers
d) All of the mentioned

5. Transmission lines and other conductors in microwave devices are usually made with
___________
a) Gold metallization
b) Silver metallization
c) Copper metallization
d) Zinc metallization

6. For the capacitors used in MMICs, the insulating dielectric films used are:
a) Air
b) SiO
c) Titanium
d) GaAs
7. Resistors used at normal operating frequencies can be directly used at microwave
frequencies in MMIc.
a) True
b) False

8. Processing in MMICs is done by __________

a) Ion implantation
b) Net list generation
c) Floor planning
d) None of the mentioned
9. MMICs are the best microwave integrated circuit fabrication methodologies without
any drawbacks in it.
a) True
b) False

10. MMICs have higher circuit flexibility as compared to other microwave integrated
fabrication methods.
a) True
b) False

11. Most of the power measuring microwave devices measure

a) Average power
b) Peak power
c) Instantaneous power
d) None of these

12. which of the following is not a Microwave measurement device

a) vector network analyser
b) spectrum analyser
c) VSWR METER
d) DSO

13. Which of the following is used for microwave power measurement

a) wheatstones bridge
b) CRO
c) multimeter
d) ammeter

14. which among the following is a microwave application

a) Industrial, Scientific, medical
b) confocal
c) tomographic
d) low frequency application

15. __________ is an important consideration for a hybrid integrated circuit.

a) material selection
b) processing units
c) design complexity
d) active sources

16. To fabricate a low frequency circuit using the hybrid microwave IC methodology, the
material with _______ is preferred.
a) high dielectric constant
b) low dielectric constant
c) high resistivity
d) low resistivity

17. The mask in a hybrid microwave circuit is made of:

a) rubylith
b) silicon
c) quartz
d) arsenic

18. The metalized substrate is coated with __________ covered with the mast and
exposed to light source.
a) photoresist
b) GaAs
c) germanium liquid
d) none of the mentioned

19. ________ is a micromachining technique where suspended structures are formed on

silicon substrates
a) MMIC
b) HIC
c) RF MEMS
d) none of the mentioned

20. Meaning of HERP IS

a) Hazard of Electromagnetic Radiation to PC
b) Hazard of Electromagnetic Radiation to Personnel
c) Hazard of Electromagnetic Radiation to Personnel computer
d) Hazard of Electromagnetic Radiation to People

21. HERF means

a) Hazard of Electromagnetic Radiation to Fire
b) Hazard of Electromagnetic Radiation to Fuel
c) Hazard of Electromagnetic Radiation to Fusion
d) Help of Electromagnetic Radiation to Fuel

22. meaning of Hazard of Electromagnetic Radiation to Ordnance (HERO)

a) danger of accidental actuation of electro-explosive devices or otherwise electrically
activating ordnance because of radio frequency electromagnetic current.
b) danger of accidental actuation of electro-explosive devices or otherwise electrically
activating ordnance because of radio frequency electromagnetic fields.
c) danger to personnel from the absorption of electromagnetic energy by the human
body. Personnel hazards are associated with the absorption of RF energy
d) danger of accidental actuation of electro-explosive devices or otherwise electrically
activating ordnance because of radio frequency electromagnetic fields

23. Which one of below is not a Features for ideal dielectric

a) Reproducibility
b) High breakdown voltage
c) Low loss tangent
d) High Process ability

24. which one of below is not a Features for ideal conductor

a) High conductivity
b) Good adhesion to the substrate
c) Easy to deposit or electroplate
d) High resistance at RF/microwaves

25. following are the materials used in MIC

a) substrate
b) dielectric
c) conductor
d) all of above

26. under which category of hazards HERP/HERP/HERF falls

a) chemical
b) physical
c) mechanical
d) radiation
27 The following vacuum tube can be used as an oscillator and an amplifier?
a) klystron
b) BWO
c) TWT
d) Magnetron

27. Which one of the following can be used for the amplification of microwave energy?
a) traveling-wave tube
b) magnetron
c) reflex klystron
d) Gunn diode

28. Strapping is used in magnetrons to

a) prevent mode jumping
b) ensure bunching
c) improve the phase-focusing effect
d) prevent cathode back heating

29. The purpose of the slow-wave structure used in TWT amplifiers is

a) to increase wave velocity
b) to reduce spurious oscillations
c) to reduce wave velocity so that the electron beam and the signal wave can interact
d) None of the above

30. The klystron tube used in a klystron amplifier is a _________ type beam amplifier.
a) Linear beam
b) Crossed field
c) Parallel field
d) None of the mentioned

31. In a _________ oscillator, the RF wave travels along the helix from the collector
towards the electron gun.
a) Interaction oscillator
b) Backward wave oscillator
c) Magnetrons
d) None o the mentioned

32. A major disadvantage of klystron amplifier is:

a) Low power gain
b) Low bandwidth
c) High source power
d) Design complexity

33. The beam width of the antenna pattern measured at half power points is called:
a) Half power beam width
b) Full null beam width
c) Beam width
d) None of the mentioned

34. If directivity of antenna increases, then the coverage area _____

a) decreases
b) increases
c) increases and then decreases
d) remains unchanged

35. The ratio of maximum power density in the desired direction to the average power
radiated from the antenna is called as _______
a) directivity
 b) directive gain
c) power gain
d) partial directivity

36. Most of the power measuring microwave devices measure

a) Average power
b) Peak power
c) Instantaneous power
d) None of these

37. TWT uses a helix

a) To reduce the axial velocity of RF field
b) To increase the efficiency
c) To reduce the noise
d) To ensure broad band operation

38. The temperature coefficient of the Thermistor is ________

a) positive
b) negative
c) zero
d) none
39. Barretters have ________

a) positive temp efficient of resistance

b) negative temp coefficient of resistance
c) both
d) none
40. Processing in MMICs is done by __________
a) Ion implantation
b) Net list generation
c) Floor planning
d) None of the mentioned
41. In MESFET, an applied signal at the gate modulates the electron carriers; this
produces _______ in the FET.
a) voltage amplification
b) voltage attenuation
c) electron multiplication
d) electron recombination
UNIT 1: WAVE GUIDES AND MICROWAVE COMPONENTS
1. Derive Solutions of Wave Equations in Rectangular Coordinates
2. Write a note on TE Modes in Rectangular Waveguides
3. Write a note on TM Modes in Rectangular Waveguides
4. Write a note on Power Transmission in Rectangular Waveguides
5. Write a note on Power Losses in Rectangular Waveguides
6. Explain Excitations of Modes in Rectangular Waveguides
7. Explain Characteristics of Standard Rectangular Waveguides
8. Write a note on Rectangular-Cavity Resonator
9. Derive S Matrix of Eplane Tee
10. Write a note on Circulators and Isolators

UNIT 2: MICROWAVE TUBES

1. Explain Velocity-Modulation Process
2. Explain Bunching Process
3. Explain HELIX TRAVELING-WAVE TUBES (TWTs}
4. Explain Explain working principle of magnetron
5. Explain Explain FORWARD WAVE CROSSED-FIELD AMPLIFIER (FWCFA
OR CFA}
6. Explain BACKWARD· WAVE CROSSED-FIELD AMPLIFIER (AMPLITRON)
7. Explain BACKWARD-WAVE CROSSED-FIELD OSCILLATOR
(CARCINOTRON}

UNIT 3: MONOLITHIC MICROWAVE INTEGRATED CIRCUITS AND

HAZARDS
1. Explain Process of MMIC Fabrication
2. Explain Substrate Materials in MMIC
3. Explain Conductor Materials in MMIC
4. Explain Dielectric Materials in MMIC
5. Explain Resistive Materials in MMIC
6. Explain MMIC Growth
7. Explain the process of thin film formation
8. Explain the process of Hybrid IC Fabrication
9. Write a note on Write a note on anechoic chambers
10. Write a note on Electromagnetic compatibility
11. Write a note on microwave hazards

UNIT 4: MICROWAVE SOLID STATE DEVICES

1. Explain Gunn Effect
2. Explain RWH Theory
3. Explain working principle of LSA Diode
4. Explain working principle of InP diodes
5. Explain working principle of CdTe diodes
6. Explain working principle of CdTe diodes
7. Explain working principle of IMPATT diodes
8. Explain working principle of PIN diodes
9. Explain working principle of MESFET
10. Explain working principle of HEMT

UNIT 5: MICROWAVE MEASUREMENTS AND MICROWAVE

APPLICATIONS
1. Explain measurement of microwave power using bridge circuit
2. Explain waveguide thermistor mounts
3. Explain theory of operation of barreters
4. Explain Measurement of wavelengths: single line cavity coupling system
5. Explain Measurement of wavelengths Transmission cavity wavemeter & reaction
wavemeter
6. Explain measurement of VSWR
7. Explain measurements of attenuation
8. Explain free space attenuation,
9. Explain thermistor parameters

MICROWAVE ANTENNAS
UNIT 6:
1. Define and explain antenna gain, directivity and beam width
2. Explain working principle of Horn antenna
3. Explain working principle of parabolic reflector with all types of feeding
methods
4. Explain working principle of slotted antenna
5. Explain working principle of Lens antenna
6. Explain working principle of Microstrip antennas
7. Explain working principle of Corner reflector
8. Find the power gain and directivity of a horn whose dimensions are 10x5 cm
operating at frequency of 6GHz
9. Design a rectangular microstrip antenna using a substrate (RT/duroid 5880)
with dielectric
constant of 2.2, h = 0.1588 cm (0.0625 inches) so as to resonate at 10 GHz.