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Course Instructor:
Shehzaib Yousuf Khan
B.Engg, M.Engg in Mechanical Engineering from NEDUET.
M.P.E. in Mechanical Engineering from Sydney University.
Ph.D. (In Progress)
www.digiomnibus.pk
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Chapter 4 : Imperfections in Solids
Learning Objectives
After studying this chapter, you should be able to do the following:
1. Describe both vacancy and self-interstitial crystalline defects.
2. Calculate the equilibrium number of vacancies in a material at some specified
temperature, given the relevant constants.
3. Name the two types of solid solutions and provide a brief written definition and/or
schematic sketch of each.
4. Given the masses and atomic weights of two or more elements in a metal alloy,
calculate the weight percent and atom percent for each element.
5. For each of edge, screw, and mixed dislocations:
(a) describe and make a drawing of the dislocation, (b) note the location of the
dislocation line, and (c) indicate the direction along which the dislocation line extends.
6. Describe the atomic structure within the vicinity of a
(a) grain boundary (b) twin boundary.
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Issues to Address
• What are the solidification mechanisms?
• What types of defects arise in solids?
• Can the number and type of defects be varied and controlled?
• How do defects affect material properties?
• Are defects undesirable?
3
Imperfections in Solids
5
Solidification Grains can be - equiaxed (roughly same size in all directions)
- columnar (elongated grains)
~ 8 cm
heat
flow
Many of the important properties of materials are due to the presence of imperfections.
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Point Defects in Metals
Vacancies: Vacant atomic sites in a structure.
Vacancy
distortion
of planes
self-
interstitial
distortion
of planes
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Equilibrium Vacancy Concentration
The presence of vacancies increases the entropy (i.e., the randomness) of the crystal.
Equilibrium concentration (equilibrium number of vacancies) varies with temperature.
Nv −Q v
= exp
Total number of atomic sites N kT
Temperature
Boltzmann's constant
(1.38 x 10 -23 J/atom-K)
-5
(8.62 x 10 eV/atom-K)
Nv Nv slope
ln
N N
-Q v /k
exponential
dependence!
T 1/T
defect concentration
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Equilibrium Vacancy Concentration
Find the equilibrium number of vacancies in 1 m3 of Cu at 1000C.
0.9 eV/atom
Given:
−Q
exp
Nv = v r = 8.4 g /cm 3
= 2.7 x 10-4
N kT
Qv = 0.9 eV/atom
1273 K
A Cu = 63.5 g/mol
8.62 x 10-5 eV/atom-K
NA = 6.02 x 1023 atoms/mol
NA
For 1 m3 , N= r x x 1 m3
A Cu Answer:
= 8.0 x 1028 sites Nv = (2.7 x 10-4)(8.0 x 1028) sites
= 2.2 x 1025 vacancies 11
Equilibrium Vacancy Concentration
• Low energy electron microscope (LEEM) view of a
(110) surface of NiAl.
• Increasing temperature causes surface island of
atoms to grow.
• Why?
Reprinted with permission from Nature (K.F. McCarty, J.A.
Nobel, and N.C. Bartelt, "Vacancies in Solids and the Stability
The equilibrium vacancy concentration increases of Surface Morphology", Nature, Vol. 412, pp. 622-625 (2001).
Image is 5.75 mm by 5.75 mm.) Copyright (2001) Macmillan
via atom motion from the crystal to the surface, Publishers, Ltd.
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Equilibrium Vacancy Concentration
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