candles or say lamps are the ancestors

of today's worlds

with the introduction of electricity and

due to Innovative nature of the human

mind

we got our first light bulb in 1879.

soon the light bulb got popular and was

used widely

but we did not stop there and kept on

working on the betterment of the pulp

which led us to LED light bulb

technology

which is more power efficient and bright

we living beings have many differences

as compared to technology as it is

completely physical in nature but there

is one big similarity between us

that is evolution

yes we both evolve with time

hey guys my name is parag and today we

are going to look at the latest

technology of the mosfet which is

gallium nitrite mosfet so let's start

[Music]

before we go into discussion of the

gallium nitrate let's see some

background for the mosfets

silicon-based mosfet is a good device

and we use it in many regular day-to-day

applications
for example in amplifiers and low

voltage switching but it is not the best

it has many drawbacks and measurements

are significant leakage current

instability and lower breakdown voltage

and average switching speed

today when the whole world is working on

electric vehicles for grain

Transportation power efficiency becomes

an important factor to consider

transportation is not the only thing

the requirement for mosfets is in

medical has also increased

so to use mosfets in such application it

should withstand High operating voltages

and switch at higher frequencies

and this cannot be achieved by regular

silicon based mosfet

as to say necessity is the mother of

invention

these requirements led us to use

compound semiconductors in mosfets

and one such compound is silicon carbide

the Silicon carbon mosfet has many

features which outplace silicon-based

mosfets

which we have already seen in this video

although silicon carbon mosfet is not

sent free it has its own drawbacks

there was still scope for improvement

and which brings us to gallium nitrate

mosfets

let's compare the gallium nitrate mosfet

with the previous two mosfets and see

what extra benefits we get in gallium

nitrate mosfets

oh I forgot about one part for this

video I am referring to this book called

mosfet and gallium nitrate fed

application book from nextperia

it is one stop solution for all Power

Electronics Engineers who want to select

a perfect mosfet switch for the circuit

and thank you so much for next video for

providing this hard copy of the book

well there are some interesting things

also coming from them stay tuned so we

have already discussed in one of our

videos what parameters we should check

to select a mosfet

let's have a competition between these

three mosfets and find out which is the

best

so the rules are simple we'll give

scores according to their performance

rank 1 will get 10 points Rank 2 will

get 5 Points and last ranker well no

points for him

to check that I look for some sample

data sheets and found three mosfets a

silicon base mosfet from on semi a

silicon carbide based mosfet from

infineine and gallium nitride mosfet

from maxperia

to conduct a Fair competition we'll

search for mosfet whose drain to Source

voltage should be at least 650 volts and

the device package is 20247.

and these mosfets should be capable to

drive 20 ampes of load current

and one more thing

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now let's start evaluating each mosfet

according to its performance in

respective parameters
first parameter that we'll consider is

the train capability depending on the

temperature

it is the continuous current that the

mosfet can carry when it is turned on

and it depends on the junction

temperature with an increase in Junction

temperature the drain current decreases

this is known as the negative

temperature coefficient

so we take drawing current values on two

temperatures one at 25 degree celsius

and other at 100 degrees Celsius

for silicon mosfet at 25 this capacity

would be 36 ampere for silicon carbide

it is 39 amperes and for gallium nitrate

mosfet it is 47.2 amperes

at 100 degrees Celsius the Silicon

mosfet can carry 22.8 amps

silicon carbon mosfet can carry 24

amperes and gallium nitrate can control

33.4 amps current

with the increase in temperature the

drain current of all three mosfet

decreased but still at 100 degrees

Celsius gallium nitrogen mosfet has good

enough value of trade current

so the point table becomes zero to

Silicon base mosfet 5 to silicon carbide

and 10 to gallium nitride

just by comparing the drain current is

not sufficient

we should check the other drain current

parameters such as Peak joint current

and Decay strain current pink drain

current is the maximum drain current

which can flow through the mosfet for a

very last time

the Silicon mosfet can handle 90 amps

the Silicon carbon mosfet and gallium

nitride can handle 100 amperes and 240

amps respectively

and that's a huge margin

this means the gallium nitrate mosfet

can handle higher values of transient

currents than other mosfets which is a

very big advantage

now we have to update the scoreboard

zero points to Silicon base mosfet 5 to

silicon and 10 to gallium nitride

even if the gate voltage is zero the

mosfet allows some small amount of

current to flow through it that current

is known as the leakage gate current

the value of the leakage current should

be as small as possible

for silicon mosfet it is at least 10

Micro amperes

the Silicon carbon mosfet ranges from 1

to 150 microamperes and for gallium

nitrate mosfet it ranges from 2.5 to 25

microamperes the window of the leakage

drain current in gallium nitrate mosfet

is very small

so the 10 points to Silicon 0 to silicon

carbide and five to gallium nitrate

mosfet as we know the load current

requirement is 20 amps

so you must check how much gate to

Source voltage is required to turn on

each mosfet

and if you check the transfer

characteristics of these mosfets then

the Silicon mosfet needs 6.5 volts

silicon carbide needs 9 volts and

gallium nitrate mosfet requires less

than 6 volts to dry the 20 amps load

effectively with minimum RDS on

we can say that gallium nitrate mosfet

can drive 20 amps load current with

minimum gate voltage

so driving or gallium nitrate mosfet

would require a smaller gate driver

but there will be five points to Silicon

based zero to silicon carbide and 10

points to gallium nitrate mosfet

the gate charge and input capacitance

are also important parameters to select

a mosfet
if you take a mosfet you'll always have

to deal with them surprise so the input

capacitance of the Silicon based mosfet

is around 2900 picofarad and its gate

charge is 66 Nano coulombs

the input capacitance of the silicon

carbide is around 1100 picofarad and its

gate charge is 33 Nano coulombs

and finally the input capacitance of the

gallium nitrate mosfet is around 1500

picofarads and its K charge is 22 nano

coulombs

this input capacitance changes as per

the change in the drain to Source

voltage but the difference is negligible

now if we compare these values the

gallium nitrate mosfet has comparatively

low input capacitance and K charge

well the input capacitance of the

gallium nitride mosfet is higher than

the silicon carbide

but comparing these values we can find

out that driving the Gate of a gallium

nitrate mosfet would be relatively

lesser power consuming than silicon and

silicon carbon mosfets because of its

lovigius input capacitance and gate

charge requirements which will

eventually minimize the gate driver

power loss

one disclaimer this gate charge is a

dynamic characteristics

so it has to be measured at a particular

circuit conditions

which is always mentioned in the

datasheet

the input capacitance or any other

Dynamic characteristics of these mosfets

are measured at brain to Source voltage

of 400 volts

now we'll give combined points to these

mosfets for input capacitance and gate

charge as this

now one of the important parameters is

the RDS on

it is the resistance between train and

Source when the mosfet is turned on

this parameter plays a very important

role in the mosfet selection

if this resistance is high then the

power loss of the component increases

which decreases the overall efficiency

of the circuit the RDS on of the Silicon

mosfet is in the range of 78 to 95 Milli

ohms

the RDS on of the silicon carbide is in

the range of 48 to 54 Milli ohms

and the RDS on of the calcium nitride is

in between 35 to 41 milliohms
if we compare the RDS on of this mosfets

we can clearly see that the gallium

nitrine mosfet has the lowest value even

though the difference is in few

milliohms still it makes a huge

difference

let's calculate the conduction loss of

these mosfets for 20 amps strain current

facility mosfet it would be around 31.2

Watts for silicon carbide it will be

around 19.2 watts and for gallium

nitrate mosfet it would be only 14 watts

now this difference seems noticeable

right

and point table goes as this

next important parameter is the reverse

recovery time and reverse recovery

charge

we have already seen this concept in the

last video of the mosfet switching for

inductors

well to brush up again let's say a

mosfet is connected at high side

and there is an inductive load

the mosfet's body diet is carrying a

free willing current when it is off

because of the flyback voltage induced

in the inductor

as we know the freewheeling diode

exhibits some strange behavior when it

switches from forward bias to reverse

bias and reverse current flows through

the diode for a very small amount of

time

the amount of time for which this

reverse current flows is known as the

reverse recovery time of the body diode

this particular area is the reverse

recovery charge

this charge and time should be as low as

possible if you want to switch a mosfet

faster for an inductive load and

minimize the drain current stress on the

mosfet

this reverse recovery time for silicon

mosfet is 106 nanoseconds for silicon

carbide it is 68 nanoseconds and gallium

nitride has only 59 nanoseconds

which is lesser and this timing

difference makes a huge impact on

Switching frequency of the mosfet

well here also the pointer system

updates

now we all know which mosfet is the

winner but to maintain game Spirit let's

find out the final score

well 15 points to Silicon based mosfet

35 points to silicon carbide and 70

points to gallium nitride mosfet

so this mosfet wins without any doubt

we saw that there are many aspects in

which gallium nitrite technology it's

Superior than silicon and silicon

carbide technology

so as per my understanding gallium

nitrate technology is not just a fad it

is the future of semiconductors and we

should welcome it with open arms

of course there are still some

limitations related to mass production

and prices but it is changing it will

take some time

apart from that gallium nitride mosfets

have high operating life it has very

high conductivity and has a wide

operating range up to 175 degree Celsius

well that is a brief comparison between

silicon silicon carbide and gallium

nitrate mosfet Technologies

I hope you got something from this if

you have any questions you can write

them down in the comment section

and please don't forget to subscribe to

my channel

and finally thank you so much for

watching this video