HEF4052B

HEF4052B
Dual 4-channel analog multiplexer/demultiplexer

Rev. 11 — 15 December 2021 Product data sheet
1. General description
The HEF4052B is a dual single-pole quad-throw analog switch (2x SP4T) suitable for use in
analog or digital 4:1 multiplexer/demultiplexer applications. Each switch features four independent
inputs/outputs (nY0, nY1, nY2 and nY3) and a common input/output (nZ). A digital enable input
(E) and two digital select inputs (S1 and S2) are common to both switches. When E is HIGH,
the switches are turned off. Inputs include clamp diodes. This enables the use of current limiting
resistors to interface inputs to voltages in excess of VDD.
2. Features and benefits

• Wide supply voltage range from 3.0 V to 15.0 V
• CMOS low power dissipation
• High noise immunity
• Fully static operation
• 5 V, 10 V, and 15 V parametric ratings
• Standardized symmetrical output characteristics
• Complies with JEDEC standard JESD 13-B
• ESD protection:
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-B exceeds 200 V
• Specified from -40 °C to +85 °C and -40 °C to +125 °C
3. Applications
• Analog multiplexing and demultiplexing
• Digital multiplexing and demultiplexing
• Signal gating
4. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
HEF4052BT -40 °C to +125 °C SO16 plastic small outline package; 16 leads; SOT109-1
body width 3.9 mm
HEF4052BTT -40 °C to +125 °C TSSOP16 plastic thin shrink small outline package; 16 SOT403-1
leads; body width 4.4 mm
Nexperia HEF4052B
5. Functional diagram
VDD
16 13
1Z
12
1Y0
14
1Y1
15
10 1Y2
S1
11
1Y3
LOGIC 1 - OF - 4
LEVEL DECODER
9 CONVERSION 1
S2 2Y0
5
2Y1
6
E 2
2Y2
4
2Y3
3
2Z
8 7
mnb042
VSS VEE
Fig. 1. Functional diagram
nYn
VDD VDD
nZ
VEE
001aak604
Fig. 2. Schematic diagram (one switch)
HEF4052B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. All rights reserved
Product data sheet Rev. 11 — 15 December 2021 2 / 18

Nexperia HEF4052B
10
0 0
4×
9 3
13 1
6 G4
1Z
1Y0 12
MDX 1
10 S1 1Y1 14 0
S2 5
9 1Y2 15 1
3
1Y3 2
11 2
2Y0 1 4
3
2Y1 5 12
2Y2 2 14
13
6 E 2Y3 4 15
2Z
11
3 001aak605 mnb041
Fig. 3. Logic symbol Fig. 4. IEC logic symbol

Nexperia HEF4052B
1Z
1Y0
LEVEL
S1
CONVERTER 1Y1
LEVEL
S2
CONVERTER 1Y2
LEVEL
E
CONVERTER 1Y3
2Y0
2Y1
2Y2
2Y3
2Z
001aak634
Fig. 5. Logic diagram

Nexperia HEF4052B
6. Pinning information
6.1. Pinning
HEF4052B
2Y0 1 16 VDD
HEF4052B
2Y2 2 15 1Y2
2Z 3 14 1Y1 2Y0 1 16 VDD

2Y2 2 15 1Y2
2Y3 4 13 1Z
2Z 3 14 1Y1
2Y1 5 12 1Y0 2Y3 4 13 1Z
2Y1 5 12 1Y0
E 6 11 1Y3
E 6 11 1Y3
VEE 7 10 S1 VEE 7 10 S1
VSS VSS 8 9 S2
8 9 S2
001aag215 001aak606
Fig. 6. Pin configuration SOT109-1 (SO16) Fig. 7. Pin configuration SOT403-1 (TSSOP16)
6.2. Pin description

Table 2. Pin description
Symbol Pin Description
E 6 enable input (active LOW)
VEE 7 supply voltage
VSS 8 ground supply voltage
S1, S2 10, 9 select input
1Y0, 1Y1, 1Y2, 1Y3, 2Y0, 2Y1, 2Y2, 2Y3 12, 14, 15, 11, 1, 5, 2, 4 independent input or output
1Z, 2Z 13, 3 common output or input
VDD 16 supply voltage
7. Function table
Table 3. Function table
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
Input Channel on
E S2 S1
L L L nY0 to nZ
L L H nY1 to nZ
L H L nY2 to nZ
L H H nY3 to nZ
H X X switches off

Nexperia HEF4052B
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol Parameter Conditions Min Max Unit
VDD supply voltage -0.5 +18 V
VEE supply voltage referenced to VDD [1] -18 +0.5 V
IIK input clamping current pins Sn and E; - ±10 mA
VI < -0.5 V, or VI > VDD + 0.5 V
VI input voltage -0.5 VDD + 0.5 V
II/O input/output current - ±10 mA
IDD supply current - 50 mA
Tstg storage temperature -65 +150 °C
Tamb ambient temperature -40 +125 °C
Ptot total power dissipation Tamb = -40 °C to +125 °C [2] - 500 mW
P power dissipation per output - 100 mW
[1] To avoid drawing VDD current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VDD current will flow out of terminals Y, and in this case
there is no limit for the voltage drop across the switch, but the voltages at Y and Z may not exceed VDD or VEE.
[2] For SOT109-1 (SO16) package: Ptot derates linearly with 12.4 mW/K above 110 °C.
For SOT403-1 (TSSOP16) package: Ptot derates linearly with 8.5 mW/K above 91 °C.
9. Recommended operating conditions

Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
VDD supply voltage see Fig. 8 3 - 15 V
VI input voltage 0 - VDD V
Tamb ambient temperature in free air -40 - +125 °C
Δt/ΔV input transition rise and fall VDD = 5 V - - 3.75 μs/V
rate VDD = 10 V - - 0.5 μs/V
VDD = 15 V - - 0.08 μs/V
001aac285
15
VDD - VSS
(V)
10
operating area
0
0 5 10 15
VDD - VEE (V)
Fig. 8. Operating area as a function of the supply voltages

Nexperia HEF4052B
10. Static characteristics

Table 6. Static characteristics
VSS = VEE = 0 V; VI = VSS or VDD, unless otherwise specified.
Symbol Parameter Conditions VDD Tamb = -40 °C Tamb = +25 °C Tamb = +85 °C Tamb = +125 °C Unit
Min Max Min Max Min Max Min Max
VIH HIGH-level |IO| < 1 μA 5V 3.5 - 3.5 - 3.5 - 3.5 - V
input voltage 10 V 7.0 - 7.0 - 7.0 - 7.0 - V
15 V 11.0 - 11.0 - 11.0 - 11.0 - V
VIL LOW-level |IO| < 1 μA 5V - 1.5 - 1.5 - 1.5 - 1.5 V
input voltage 10 V - 3.0 - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 - 4.0 V
II input leakage 15 V - ±0.1 - ±0.1 - ±1.0 - ±1.0 μA
current
IS(OFF) OFF-state Z port; 15 V - - - 1000 - - - - nA
leakage all channels OFF;
current see Fig. 9
Y port; 15 V - - - 200 - - - - nA
per channel;
see Fig. 10
IDD supply current IO = 0 A 5V - 5 - 5 - 150 - 150 μA
10 V - 10 - 10 - 300 - 300 μA
15 V - 20 - 20 - 600 - 600 μA
CI input Sn, E inputs - - - - 7.5 - - - - pF
capacitance
10.1. Test circuits

VDD
S1 and S2
VDD or VSS
nZ nYn
E
IS
VSS = VEE
VDD
VO VI
001aak635
Fig. 9. Test circuit for measuring OFF-state leakage current Z port

Nexperia HEF4052B
VDD
S1 and S2 nY0 1
VDD or VSS switch
IS
nZ nYn 2
E
VSS = VEE
VSS
VI VO
001aak636
Fig. 10. Test circuit for measuring OFF-state leakage current nYn port
10.2. On resistance
Table 7. ON resistance
Tamb = 25 °C; ISW = 200 μA; VSS = VEE = 0 V.
Symbol Parameter Conditions VDD - VEE Typ Max Unit
RON(peak) ON resistance (peak) VI = 0 V to VDD - VEE; 5V 350 2500 Ω
see Fig. 11 and Fig. 12 10 V 80 245 Ω
15 V 60 175 Ω
RON(rail) ON resistance (rail) VI = 0 V; 5V 115 340 Ω
see Fig. 11 and Fig. 12 10 V 50 160 Ω
15 V 40 115 Ω
VI = VDD - VEE; 5V 120 365 Ω
see Fig. 11 and Fig. 12 10 V 65 200 Ω
15 V 50 155 Ω
ΔRON ON resistance mismatch VI = 0 V to VDD - VEE; 5V 25 - Ω
between channels see Fig. 11 10 V 10 - Ω
15 V 5 - Ω
10.2.1. On resistance waveform and test circuit
V
VDD VSW
S1 and S2
VDD or VSS
nZ nYn
E
VSS = VEE
VSS
ISW VI
001aak637
RON = VSW / ISW.

Fig. 11. Test circuit for measuring RON

Nexperia HEF4052B
001aae648
400
RON
(Ω)
VDD = 5 V
300
200
100 10 V
15 V
0
0 5 10 15
VI (V)
Fig. 12. Typical RON as a function of input voltage
11. Dynamic characteristics

Table 8. Dynamic characteristics
Tamb = 25 °C; VSS = VEE = 0 V; for test circuit see Fig. 16.
Symbol Parameter Conditions VDD Typ Max Unit
tPHL HIGH to LOW propagation delay nYn, nZ to nZ, nYn; see Fig. 13 5V 10 20 ns
10 V 5 10 ns
15 V 5 10 ns
Sn to nYn, nZ; see Fig. 14 5V 150 305 ns
10 V 65 135 ns
15 V 50 100 ns
tPLH LOW to HIGH propagation delay Yn, nZ to nZ, nYn; see Fig. 13 5V 10 20 ns
10 V 5 10 ns
15 V 5 10 ns
Sn to nYn, nZ; see Fig. 14 5V 150 300 ns
10 V 75 150 ns
15 V 50 100 ns
tPHZ HIGH to OFF-state propagation E to nYn, nZ; see Fig. 15 5V 95 190 ns
delay 10 V 90 180 ns
15 V 85 180 ns
tPZH OFF-state to HIGH propagation E to nYn, nZ; see Fig. 15 5V 130 260 ns
15 V 45 85 ns
tPLZ LOW to OFF-state propagation E to nYn, nZ; see Fig. 15 5V 100 205 ns
15 V 90 180 ns
tPZL OFF-state to LOW propagation E to nYn, nZ; see Fig. 15 5V 120 240 ns
15 V 35 75 ns

Nexperia HEF4052B
11.1. Waveforms and test circuit

VDD
nYn or nZ
input VM VDD
VEE Sn input VM
VSS
tPLH tPHL
tPLH tPHL
VO VO
90 %
nYn or nZ
nZ or nYn VM output
output VEE 10 %
VEE switch OFF switch ON switch OFF
001aac290 001aac291
Measurement points are given in Table 9. Measurement points are given in Table 9.
Fig. 13. nYn, nZ to nZ, nYn propagation delays Fig. 14. Sn to nYn, nZ propagation delays
VDD
E input VM
VSS
tPLZ tPZL
VO 90 %
nYn or nZ output
LOW-to-OFF
OFF-to-LOW 10 %
VEE
tPHZ tPZH
VO
90 %
nYn or nZ output
HIGH-to-OFF
OFF-to-HIGH
VEE 10 %
switch ON switch OFF switch ON
001aac292
Measurement points are given in Table 9.

Fig. 15. Enable and disable times
Table 9. Measurement points

Supply voltage Input Output
VDD VM VM
5 V to 15 V 0.5VDD 0.5VDD

Nexperia HEF4052B
tW
VI
negative 90 %
VM VM
pulse
10 %
0V
tf tr
tr tf
VI
positive 90 %
VM VM
pulse 10 %
0V
tW
VDD
VDD VI
VI VO RL S1
PULSE open
DUT
GENERATOR
RT CL
VSS
VEE
001aaj903
Test data is given in Table 10.

Definitions:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator;
CL = Load capacitance including test jig and probe;
RL = Load resistance.
Fig. 16. Test circuit for measuring switching times
Table 10. Test data

Input Load S1 position
nYn, nZ Sn and E tr, tf VM CL RL tPHL [1] tPLH tPZH, tPHZ tPZL, tPLZ other
VDD or VEE VDD or VSS ≤ 20 ns 0.5VDD 50 pF 10 kΩ VDD or VEE VEE VEE VDD VEE
[1] For nYn to nZ propagation delays use VEE. For Sn to nYn or nZ propagation delays use VDD.
11.2. Additional dynamic parameters

Table 11. Additional dynamic characteristics
VSS = VEE = 0 V; Tamb = 25 °C.
Symbol Parameter Conditions VDD Typ Max Unit
THD total harmonic distortion see Fig. 17; RL = 10 kΩ; CL = 15 pF; [1] 5 V 0.25 - %
channel ON; VI = 0.5VDD (p-p); fi = 1 kHz 10 V 0.04 - %
15 V 0.04 - %
f(-3dB) -3 dB frequency response see Fig. 18; RL = 1 kΩ; CL = 5 pF; [1] 5 V 13 - MHz
channel ON; VI = 0.5VDD (p-p) 10 V 40 - MHz
15 V 70 - MHz
αiso isolation (OFF-state) see Fig. 19; fi = 1 MHz; RL = 1 kΩ; [1] 10 V -50 - dB
CL = 5 pF; channel OFF; VI = 0.5VDD (p-p)
Vct crosstalk voltage digital inputs to switch; see Fig. 20; 10 V 50 - mV
RL = 10 kΩ; CL = 15 pF;
E or Sn = VDD (square-wave)
Xtalk crosstalk between switches; see Fig. 21; fi = 1 MHz; [1] 10 V -50 - dB
RL = 1 kΩ; VI = 0.5VDD (p-p)
[1] fi is biased at 0.5 VDD; VI = 0.5VDD (p-p).

Nexperia HEF4052B
Table 12. Dynamic power dissipation

PD can be calculated from the formulas shown; VEE = VSS = 0 V; tr = tf ≤ 20 ns; Tamb = 25 °C.
Symbol Parameter VDD Typical formula for PD (μW) where:
2
PD dynamic power 5V PD = 1300 × fi + Σ(fo × CL) × VDD fi = input frequency in MHz;
dissipation 10 V PD = 6100 × fi + Σ(fo × CL) × VDD
2 fo = output frequency in MHz;
2
CL = output load capacitance in pF;
15 V PD = 15600 × fi + Σ(fo × CL) × VDD VDD = supply voltage in V;
Σ(CL × fo) = sum of the outputs.
11.2.1. Test circuits
VDD
VDD
S1 and S2
VDD or VSS
S1 and S2
nZ nYn VDD or VSS
E nZ nYn
VSS = VEE E
VSS
RL CL D VSS = VEE
VSS
fi RL CL dB
fi
001aak638
001aak639
Fig. 17. Test circuit for measuring total harmonic
distortion Fig. 18. Test circuit for measuring frequency response
VDD
S1 and S2 nY0 1
VDD or VSS switch
nZ nYn 2
E
VSS = VEE
VSS RL CL dB
fi
001aak657
Fig. 19. Test circuit for measuring isolation (OFF-state)

Nexperia HEF4052B
0.5VDD VDD 0.5VDD
RL RL
S1 and S2 nY0 1
switch
nZ nYn 2
E
G VSS = VEE CL V VO
VDD or VSS
001aak658
a. Test circuit
logic off on off

input (Sn, E)
VO Vct
001aaj908
b. Input and output pulse definitions
Fig. 20. Test circuit for measuring crosstalk voltage between digital inputs and switch
VDD
VDD
S1 and S2 nY0
S1 and S2 nY0 VDD or VSS
VDD or VSS
nZ nYn
nZ nYn
E
E
VSS = VEE
VSS = VEE VSS VI RL
VSS RL VO RL
VI RL VO
001aak659 001aak660
a. Switch closed condition b. Switch open condition
Fig. 21. Test circuit for measuring crosstalk between switches

Nexperia HEF4052B
12. Package outline
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
D E A
X
y HE v M A
16 9
Q
A2
(A 3) A
A1
pin 1 index
θ
Lp
1 8 L
e w M detail X
bp
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A
UNIT A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ
max.
0.25 1.45 0.49 0.25 10.0 4.0 6.2 1.0 0.7 0.7
mm 1.75 0.25 1.27 1.05 0.25 0.25 0.1
0.10 1.25 0.36 0.19 9.8 3.8 5.8 0.4 0.6 0.3 8
o
o
0.010 0.057 0.019 0.0100 0.39 0.16 0.244 0.039 0.028 0.028 0
inches 0.069 0.01 0.05 0.041 0.01 0.01 0.004
0.004 0.049 0.014 0.0075 0.38 0.15 0.228 0.016 0.020 0.012
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
99-12-27
SOT109-1 076E07 MS-012
03-02-19
Fig. 22. Package outline SOT109-1 (SO16)

Nexperia HEF4052B
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1
D E A
X
y HE v M A
16 9
Q
A2 (A 3 )
A
A1
pin 1 index
θ
Lp
L
1 8
detail X
w M
e bp
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)

A
UNIT A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ
max.
mm
0.15 0.95 0.30 0.2 5.1 4.5 6.6 0.75 0.4 0.40 8o
1.1 0.25 0.65 1 0.2 0.13 0.1
0.05 0.80 0.19 0.1 4.9 4.3 6.2 0.50 0.3 0.06 0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
99-12-27
SOT403-1 MO-153
03-02-18
Fig. 23. Package outline SOT403-1 (TSSOP16)

Nexperia HEF4052B
13. Abbreviations
Table 13. Abbreviations
Acronym Description
CMOS Complementary Metal-Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model
14. Revision history

Table 14. Revision history
Document ID Release date Data sheet status Change notice Supersedes
HEF4052B v.11 20211215 Product data sheet - HEF4052B v.10
Modifications: • The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 and Section 2 updated.
• Table 4: Derating values for Ptot total power dissipation updated.
• Table 13 updated.
Modifications: • Type number HEF4052BP (SOT38-4) removed.
Modifications: • Fig. 20: Test circuit modified
Modifications: • Legal pages updated.
• Changes in Section 1, Section 2, and Section 3.
HEF4052B v.4 20090924 Product data sheet - HEF4052B_CNV v.3
HEF4052B_CNV v.3 19950101 Product specification - HEF4052B_CNV v.2
HEF4052B_CNV v.2 19950101 Product specification - -

Nexperia HEF4052B
injury, death or severe property or environmental damage. Nexperia and its
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such equipment or applications and therefore such inclusion and/or use is at
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document, and as such is not complete, exhaustive or legally binding.
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Draft — The document is a draft version only. The content is still under the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Nexperia HEF4052B
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Ordering information....................................................1
5. Functional diagram.......................................................2
6. Pinning information......................................................5
6.1. Pinning.........................................................................5
6.2. Pin description............................................................. 5
7. Function table............................................................... 5
8. Limiting values............................................................. 6
9. Recommended operating conditions..........................6
10. Static characteristics..................................................7
10.1. Test circuits................................................................7
10.2. On resistance............................................................ 8
10.2.1. On resistance waveform and test circuit................. 8
11. Dynamic characteristics.............................................9
11.1. Waveforms and test circuit.......................................10
11.2. Additional dynamic parameters................................11
11.2.1. Test circuits........................................................... 12
12. Package outline........................................................ 14
13. Abbreviations............................................................ 16
14. Revision history........................................................16
15. Legal information......................................................17
© Nexperia B.V. 2021. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 15 December 2021

HEF4052B

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HEF4052B

Dual 4-channel analog multiplexer/demultiplexer

2. Features and benefits

Fig. 1. Functional diagram

Fig. 2. Schematic diagram (one switch)

Product data sheet Rev. 11 — 15 December 2021 2 / 18

Fig. 3. Logic symbol Fig. 4. IEC logic symbol

Product data sheet Rev. 11 — 15 December 2021 3 / 18

Fig. 5. Logic diagram

Product data sheet Rev. 11 — 15 December 2021 4 / 18

2Z 3 14 1Y1 2Y0 1 16 VDD

6.2. Pin description

Product data sheet Rev. 11 — 15 December 2021 5 / 18

9. Recommended operating conditions

Fig. 8. Operating area as a function of the supply voltages

Product data sheet Rev. 11 — 15 December 2021 6 / 18

10. Static characteristics

10.1. Test circuits

Fig. 9. Test circuit for measuring OFF-state leakage current Z port

Product data sheet Rev. 11 — 15 December 2021 7 / 18

10.2.1. On resistance waveform and test circuit

RON = VSW / ISW.

Product data sheet Rev. 11 — 15 December 2021 8 / 18

Fig. 12. Typical RON as a function of input voltage

11. Dynamic characteristics

Product data sheet Rev. 11 — 15 December 2021 9 / 18

11.1. Waveforms and test circuit

switch ON switch OFF switch ON

Measurement points are given in Table 9.

Table 9. Measurement points

Product data sheet Rev. 11 — 15 December 2021 10 / 18

Test data is given in Table 10.

Table 10. Test data

11.2. Additional dynamic parameters

[1] fi is biased at 0.5 VDD; VI = 0.5VDD (p-p).

Product data sheet Rev. 11 — 15 December 2021 11 / 18

Table 12. Dynamic power dissipation

11.2.1. Test circuits

Fig. 19. Test circuit for measuring isolation (OFF-state)

Product data sheet Rev. 11 — 15 December 2021 12 / 18

0.5VDD VDD 0.5VDD

logic off on off

b. Input and output pulse definitions

a. Switch closed condition b. Switch open condition

Fig. 21. Test circuit for measuring crosstalk between switches

Product data sheet Rev. 11 — 15 December 2021 13 / 18

12. Package outline

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

OUTLINE REFERENCES EUROPEAN

Fig. 22. Package outline SOT109-1 (SO16)

Product data sheet Rev. 11 — 15 December 2021 14 / 18

DIMENSIONS (mm are the original dimensions)

OUTLINE REFERENCES EUROPEAN

Fig. 23. Package outline SOT403-1 (TSSOP16)

Product data sheet Rev. 11 — 15 December 2021 15 / 18

14. Revision history

Product data sheet Rev. 11 — 15 December 2021 16 / 18

Product data sheet Rev. 11 — 15 December 2021 17 / 18

© Nexperia B.V. 2021. All rights reserved

Product data sheet Rev. 11 — 15 December 2021 18 / 18

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