Electron transport in 2DEG AlGaN/(AlN)/GaN

and 3DEG GaN channels

Linas Ardaravičius1*, Oleg Kiprijanovič2 , Emilis Šermukšnis1 ,
Justinas Jorudas3 , Irmantas Kašalynas3*
1 Department of Fundamental Research, Center for Physical Sciences
and Technology, Saulėtekio av. 3, Vilnius, 10257, Lithuania.
2 Department of Functional Mateerials and Electronics, Center for

Physical Sciences and Technology, Saulėtekio av. 3, Vilnius, 10257,

Lithuania.
3 Department of Optoelectronics, Center for Physical Sciences and

Technology, Saulėtekio av. 3, Vilnius, 10257, Lithuania.

*Corresponding author(s). E-mail(s): linas.ardaravicius@ftmc.lt;

irmantas.kasalynas@ftmc.lt;
Contributing authors: oleg.kiprijanovic@ftmc.lt;
emilis.sermuksnis@ftmc.lt; irmantas.kasalynas@ftmc.lt;

Abstract
Current-field characteristics were measured at room temperature using voltage
pulse durations of 2 ns and 3 ns for two-dimensional electron gas (2DEG) channel
structures AlGaN/AlN/GaN (sample U79) and AlGaN/GaN (sample U78) grown
on SiC substrates, respectively. The pulse duration for three-dimensional electron
gas (3DEG) channel GaN structure grown on GaN substrate was 20 ns. The use
of nanosecond duration pulses enabled minimization of lattice self-heating effects.
Current values of 0.31 A at the highest field were reached for U79 with a 45
µm channel length while the highest current values of 0.45 A were measured for
U78 with a 35 µm channel length. The highest current of 0.8 A was measured
for the GaN structure. The strongest electric field of 76 kV/cm was applied
to U78 with a channel length of 12.5 µm and showed current saturation. The
strongest electric field of 100 kV/cm was achieved for the GaN. Highest electron
drift velocity was estimated from data on measured current and Hall electron
density as 1.2×107 cm/s at 69 kV/cm for U78 sample while the lowest value of
0.9×107 cm/s at 42 kV/cm was obtained for U79 sample. The electron velocity
in the hetero-structures grown without the AlN spacer on SiC substrate was

1
 found to be 10-20 % lower than that measured for AlGaN/GaN structures but
grown on sapphire substrate. The highest electron velocity of 1.6×107 cm/s at 95
kV/cm was attained for the 3DEG GaN. The drift velocity at high fields in the
2DEG GaN channel is lower than that in the 3DEG GaN as a result of stronger
hot-phonon effect.

Keywords: electric field strength, nanosecond electrical pulses, electron drift velocity,
gallium nitride, 2D electron gas, 3D electron gas

1 Introduction
Gallium nitride (GaN) has many attractive properties for high-power and high-
frequency applications due to a wide bandgap of 3.4 eV and a high electron peak
velocity of ∼3×107 cm/s achieved at high electric fields [2]. In particular, the velocity
of two-dimensional electron gas (2DEG) in nitride-based heterostructures varies from
1×107 to ∼3×107 cm/s depending on the presence of barrier layer [23, 27].

2 Experimental
2.1 Samples
In this work, layers for the AlGaN/AlN/GaN sample (U79) were grown on 6H-polytype
SiC substrate. A nominally undoped Al0 .25Ga0 .75N barrier layer was grown capping
it with GaN and SiNx passivation layers. A similar structure, but without an AlN
spacer - AlGaN/GaN (U78) was developed on a 4H-polytype SiC substrate where a
Al0 .25Ga0 .75N barrier was capped by a GaN layer. The ohmic contacts were fabricated
of a Ti/Al/Ni/Au metal stack with a respective thickness of 30/90/20/100 nm. Lightly
doped GaN epitaxial layers were grown on semi-insulating GaN substrates. The ohmic
contacts were fabricated of a Ti/Al/Ni/Au metal stack with a respective thickness
of 30/90/20/150 nm. The contacts of all investigated structures were annealed in
nitrogen ambient. The mesas were formed either by plasma reactive ion etching or
by implantation of Al ions into a depth. More details about the device processing
have been reported elsewhere [18, 19]. The transmission line model patterns (TLMs)
of width w = 250 µm and of length L = 6, 12.5, 25, 35, 45, 55, 65 µm were used to
evaluate the contact resistance Rc = 1-7 Ohms for 2D channels and 22.5 Ohms for 3D
channel at low electric fields. The Hall effect experiments in Van der Paw geometry
at temperature of 300 K revealed the density n and mobility values of 2DEG in used
U79 and U78 samples to be of 8.3×1012 cm−2 and 9.3×1012 cm−2 and of 1.9×102
cm2 /Vs and 1.9×103 cm2 /Vs, respectively. The GaN epilayers with a thickness of
d = 10 µm demonstrated three-dimensional electron density (3DEG) and low-field
mobility values of 1.1×1016 cm−3 and 1021 cm2 /Vs at 300 K.

2
2.2 Methodology
Current-field (I −E) characteristics were measured at room temperature using voltage
pulse duration of 2 ns and 3 ns for the samples from U79 and U78, respectively. The
pulse waveforms to measure current-voltage characteristics in the nanosecond time
scale up to high electric fields for GaN 2DEG and 3DEG channels are presented in
Fig. 1. In particular, the waveform of transmitted signal at the 30 dB attenuation (40
kV/cm) for the GaN sample is shown in Fig. 1 (a), the waveform of reference signal at
36 dB voltage attenuation is shown in Fig. 1 (b), the waveform of transmitted signal
at the 20 dB attenuation (21 kV/cm) for the AlGaN/AlN/GaN sample is presented
in Fig. 1 (c), and the waveform of transmitted signal at the 26 dB attenuation (75
kV/cm) for the AlGaN/GaN sample is shown in Fig. 1 (d). The procedure to evaluate
the current and the voltage drop along the sample is described in Ref. [35]. The
use of nanosecond duration pulses enables minimization of lattice self-heating effects.
Current-field characteristics were measured at room temperature using voltage pulse
duration of 20 ns for the GaN samples. The electron drift velocity vdr (E) was estimated

1.2
(V)

1.0
(V)

(a) 1.0 Reference signal

GaN on GaN
x
Registered voltage U

Transmitted signal 36 dB
G

0.8
Registered voltage U

30 dB, 12.5 m 0.8

40 kV/cm
0.6
0.6

0.4
0.4

0.2 0.2

0.0 0.0

0 20 40 60 80 100 0 10 20

Time (ns) Time (ns)

1.6
AlGaN/AlN/GaN on SiC 1.0
(V)

AlGaN/GaN on SiC
(c)
(V)

1.4 Transmitted signal (d) Transmitted signal

x

0.8
Registered voltage U

1.2 20 dB; 35 m 26 dB; 12.5 m

x
Registered voltage U

75 kV/cm
21 kV/cm
1.0
0.6

0.8

0.4
0.6

0.4 0.2

0.2
0.0
0.0

0 10 20 0 10 20

Time (ns) Time (ns)

Fig. 1 The waveforms of measured current-voltage (I − U ) characteristics in the nanosecond time

scale up to high electric fields for GaN 2DEG and 3DEG channels (a); The waveform of transmitted
signal at the 30 dB attenuation (40 kV/cm) for the GaN sample (a); The waveform of reference
signal at the 36 dB attenuation (b); The waveform of transmitted signal at the 20 dB attenuation
(21 kV/cm) for the AlGaN/AlN/GaN sample (c); The waveform of transmitted signal at the 26 dB
attenuation (75 kV/cm) for the AlGaN/GaN sample (d);

from the current I measured in the direction parallel to the two-dimensional or three-
dimensional channel according to the expressions [9, 30–32]:

I(E)
vdr (E) = (1)
en2D w

3
for 2D channels and
I(E)
vdr (E) = (2)
en3D wd
for 3D channels valid for the uniform electric field E and the field independent car-
rier density n2D or n3D (here e is the elementary charge). Some samples experienced
thermal breakdown as a result of self-heating effect and while the others were soft
damaged at high electric fields. This damage was characterized by the change of the
zero-field channel resistance measured before and after the high-field experiment. We
present results up to a damage level not exceeding 5-10%.

3 Results and Discussion

Current values of 0.31 A at the highest field were reached for U79 with a 45 µm channel
length while the highest current values of 0.45 A were measured for U78 with a 35 µm
channel length. The strongest electric field of 76 kV/cm was applied to U78 sample
with a channel length of 12.5 µm and showed current saturation. Highest electron

AlGaN/GaN on SiC

293 K; 3 ns

55 m

35 m
Current (A)

12.5 m
0.1

2
0.01 = 1900 cm /Vs
13 -2
n = 9.3 x 10 cm

0.1 1 10 100

Electric field (kV/cm)

Fig. 2 The room-temperature current–field dependence for AlGaN/GaN samples measured at vari-
ous inter-electrode distances: 12.5 µm (stars), 35 µm (diamonds), and 55 µm (squares). Electron Hall
mobility is µ0 = 1900 cm2 /(V s). Voltage pulse duration is 3 ns.

drift velocity vdr was estimated from data on measured current I and Hall electron
density as 1.2×107 cm/s at 69 kV/cm for U78 heterostructure while the lowest value of
0.9×107 cm/s at 42 kV/cm was obtained for U79 heterostructure (Fig. 1). The electron
velocity in the hetero-structures grown without the AlN spacer on SiC substrate was
found to be 10-20 % lower than that measured for AlGaN/GaN structures but grown
on sapphire substrate [23, 24]. On the other hand, the intrinsic current gain cut-off
frequency values were used to determine the 300 K average transit velocity values of
∼1.2×107 cm/s and ∼1.3×107 cm/s for AlGaN/GaN on sapphire and SiC, respectively
[22]. In this reference, the threading dislocations were lower, by a factor of least 4:1
for the SiC substrates, compared with the sapphire substrates as measured by AFM.

4
 AlGaN/AlN/GaN on SiC

293 K; 2 ns

45 m

35 m

25 m

Current (A)
0.1
12.5 m

2
0.01 = 1900 cm /Vs
13 -2
n = 8.3 x 10 cm

0.1 1 10 100

Electric field (kV/cm)

Fig. 3 The room-temperature current–field dependence for AlGaN/AlN/GaN samples measured

at various inter-electrode distances: 12.5 µm (stars), 25 µm (squares), 35 µm (diamonds), 45 µm
(triangles). Electron Hall mobility is µ0 = 1900 cm2 /(V s). Voltage pulse duration is 2 ns.

The highest drift velocity is obtained for samples with 12.5 µm length reaching values
up to 1.0×107 cm/s at 75 kV/cm and up to 1.1×107 cm/s at 57 kV/cm for samples
U78 and U79, respectively. This result is consistent with the highest reported velocity
value in AlGaN/AlN/GaN on sapphire [23]. The drift velocity on sapphire measured
under fields up to 20 kV/cm were in agreement with Monte Carlo simulations with
hot-phonons and 2DEG degeneracy taken into account.

1 AlGaN/GaN on SiC
(cm/s)

293 K; 3 ns

55 m

35 m
7
Drift velocity 10

12.5 m

0.1

2
= 1900 cm /Vs
13 -2
n=9.3 x 10 cm

0.01

0.1 1 10 100

Electric field (kV/cm)

Fig. 4 Electron drift velocity-electric field dependence for the AlGaN/GaN samples at room
temperature. Carrier density: 9.3×1012 cm−2 . Voltage pulse duration is 3 ns.

The highest current of 0.8 A was measured for 3D GaN. The strongest electric
field of 95 kV/cm was achieved. The highest electron velocity of 1.6×107 cm/s at 95

5
 AlGaN/AlN/GaN on SiC

(cm/s)
1
293 K; 2 ns

45 m

35 m

7
Drift velocity 10
25 m

12.5 m

0.1

2
= 1900 cm /Vs
13 -2
n=8.3 x 10 cm

0.01

0.1 1 10 100

Electric field (kV/cm)

Fig. 5 Electron drift velocity-electric field dependence for the AlGaN/AlN/GaN samples at room
temperature. Carrier density: 8.3×1012 cm−2 . Voltage pulse duration is 2 ns.

kV/cm was attained for the GaN. The drift velocity at high fields in the 2D GaN
channels is lower than that in the 3D GaN as a result of stronger hot-phonon effect.

1.0 2.5

0.8

Drift velocity (10 cm/s)

2.0

7
0.6 1.5
Current (A)

0.4 GaN on GaN 1.0

300 K
16 -3
0.2 1.1x10 cm
0.5
L= 12.5 µm
t = 18ns
0.0 0.0
0 20 40 60 80 100
Electric field (kV/cm)

Fig. 6 The room-temperature current–field dependence for samples of GaN on GaN substrate mea-
sured at an inter-electrode distance of 12.5 µm (circles). Electron drift velocity dependence on the
applied electric field (squares). Electron Hall mobility is µ0 = 1021 cm2 /(V s), electron density is n3D
= 1.1×1016 cm−3 . Voltage pulse duration is 20 ns.

4 Conclusion
Acknowledgments. This research is funded by the Research Council of Lithuania
(grant No. 01.2.2LMT-K-718-03-0096).

6
 AlGaN/AlN/GaN on SiC

1 293 K; 2 ns

(cm/s)
45 m

35 m
AlGaN/GaN on SiC
25 m

7
293 K; 3 ns

Drift velocity 10
12.5 m
12 -2 55 m
n=8.3 x 10 cm
0.1 35 m

12.5 m
12 -2
n=9.3 x 10 cm

GaN on GaN

293 K; 20 ns

12.5 m
0.01 16 -3
n=1.0 x 10 cm

0.1 1 10 100

Electric field (kV/cm)

Fig. 7 Electron drift velocity-electric field dependence for the AlGaN/GaN, AlGaN/AlN/GaN
2DEG channels and GaN 3DEG channels at room temperature. Carrier density is 9.3×1012 cm−2 ,
8.3×1012 cm−2 , 1.1×1016 cm−3 and voltage pulse duration is 2 ns, 3 ns, 20 ns, respectively.

Declarations
• Conflict of interest/Competing interests The authors declare that they have no
known competing financial interests or personal relationships that could have
appeared to influence the work reported in this paper.
• Availability of data and materials The data sets generated during and/or analyzed
during the current study are available from the corresponding author on reasonable
request.
• Authors’ contributions LA, OK, EŠ, IK contributed to the study conception and
design. Material preparation was performed by JJ. Experimental data collection
and analysis were performed by LA and OK. Funding was acquired by IK. The first
draft of the manuscript was written by LA and all authors commented on previous
versions of the manuscript. All authors read and approved the final manuscript.

References
[1] A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermuksnis, Ultrafast
Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel. IEEE
Proc. 98, 1118-1126 (2010)

[2] H. Morkoç, Nitride Semiconductor Devices: Fundamentals and Applications.

Wiley-VCH, Berlin (2013) DOI:10.1002/9783527649006

[3] Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang,

B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, H. Xing, Ultrahigh-
Speed GaN High-Electron-Mobility Transistors With fT /fmax of 454/444 GHz.
IEEE Electron Device Lett. 33(7), 988–990 (2012).

7
 [4] J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E.
Preble, K. R. Evans, C.-Z. Lu, Carrier velocity in InAlN/AlN/GaN heterostruc-
ture field effect transistors on Fe-doped bulk GaN substrates. Appl. Phys. Lett.
96, 102109 (2010)

[5] S. Bajaj, O. F. Shoron, P. S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S.

Reza, E. M. Chumbes, J. Khurgin, S. Rajan, Density-dependent electron trans-
port and precise modeling of GaN high electron mobility transistors. Appl. Phys.
Lett. 107, 153504 (2015)

[6] J. Khurgin, Y. J. Ding, D. Jena, Hot phonon effect on electron velocity saturation
in GaN: A second look. Appl. Phys. Lett. 91, 252104 (2007)

[7] J. Liberis, M. Ramonas, E. Šermukšnis, P. Sakalas, N. Szabo, M. Schuster, A.

Wachowiak, A. Matulionis, Hot-phonon lifetime in Al0 .23Ga0 .77N/GaN channels,
Semicond. Sci. Technol. 29, 045018 (2014)

[8] J. H. Leach, X. Ni, J. Lee, Ü. Özgür, A. Matulionis, H Morkoç, New twists in
LEDs and HFETs based on nitride semiconductors. Phys. Status Solidi A 207,
1091-1100 (2010)

[9] N. Ma, B. Shen, L. W. Lu, F. J. Xu, L. Guo, X. Q. Wang, F. Lin, Z. H. Feng, S.

B. Dun, B. Liu, Boundary-enhanced momentum relaxation of longitudinal optical
phonons in GaN. Appl. Phys. Lett. 100, 052109 (2012)

[10] M. Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell, M. J. Schurman, I. T.

Ferguson, Time-resolved electroabsorption measurement of the electron velocity-
field characteristic in GaN. Appl. Phys. Lett. 76, 1155-1157 (2000)

[11] A. Reklaitis, L. Reggiani, Monte Carlo study of hot-carrier transport in bulk

wurtzite GaN and modeling of a near-terahertz impact avalanche transit time
diode. J. Appl. Phys. 95, 7525-7935 (2004)

[12] M. Ramonas, A. Matulionis, L. F. Eastman, Monte Carlo evaluation of an ana-

lytical model for nonequilibrium-phonon induced electron velocity saturation in
GaN. Semicond. Sci. Technol. 22, 875–879 (2007)

[13] G. Atmaca, P. Narin, E. Kutlu, T. V. Malin, V. G. Mansurov, K. S. Zhuravlev, S.

B. Lisesivdin, E. Özbay, Negative Differential Resistance Observation and a New
Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures. IEEE
Trans. Electron Devices 65, 950-956 (2018)

[14] L. Guo, X. Yang; Z. Feng; Y. Lv; J. Cheng; L. Sang, F. Xu, N. Tang, X. Wang,
W. Ge, B. Shen, Effects of light illumination on electron velocity of AlGaN/GaN
heterostructures under high electric field. Appl. Phys. Lett. 105, 242104 (2014)

8
[15] A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stan-
ionytė, D. Dobrovolskas, G. Tamulaitis, Optical and structural properties of
BGaN layers grown on different substrates. J. Phys. D: Appl. Phys. 48, 465307
(2015)

[16] O. Yilmazoglu, K. Mutamba, D. Pavlidis, T. Karaduman, First observation of

bias oscillations in GaN Gunn diodes on GaN substrate. IEEE Trans. Electron
Devices 55, 1563-1566 (2008)

[17] U. V. Bhapkar, M. S. Shur, Monte Carlo calculation of velocity-field characteris-

tics of wurtzite GaN. J. Appl. Phys. 82 1649-1655 (1997)

[18] Balagula R M, Subačius L, Jorudas J, Janonis V, Prystawko P, Grabowski M

and Kašalynas I 2022 High-Frequency and High-Power Performance of n-Type
GaN Epilayers with Low Electron Density Grown on Native Substrate Materials
15 2066 (2022).

[19] E. Šermukšnis, J. Jorudas, A. Šimukovič, V. Kovelevskij, I. Kašalynas, Self-

Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas
in AlGaN/GaN Heterostructures. Appl. Sci. 12, 11079 (2022)

[20] L. Ardaravičius, J. Liberis, O. Kiprijanovič, A. Matulionis, M. Wu, H. Morkoç,

Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN. Phys.
Status Solidi RRL, 5, 65-67 (2011)

[21] A. Matulionis, Electron density window for best frequency performance, low-
est phase noise and slowest degradation of GaN heterostructure field-effect
transistors. Semicond. Sci. Technol. 28, 074007 (2013)

[22] L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov,

H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and
J. R. Shealy, IEEE Trans. Electron Devices 48(3), 479-485 (2001).

[23] L. Ardaravičius, M. Ramonas, O. Kiprijanovic, J. Liberis, A. Matulionis, L. F.

Eastman, J. R. Shealy, X. Chen, Y. J. Sun, Comparative analysis of hot-electron
transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels, Phys. Status
Solidi A 202, 808-811 (2005)

[24] L. Ardaravičius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L. F.

Eastman, J. R. Shealy, A. Vertiatchikh, Electron drift velocity in AlGaN/GaN
channel at high electric fields. Appl. Phys. Lett. 83, 4038-4040 (2003)

[25] L. Ardaravičius, M. J. Kelly, M. Kappers, O. Kiprijanovič, S. Whelan, Measure-

ments of current-voltage characteristics of high-speed SiC and GaN power devices
in nanosecond time scale, Lith. J. Phys. 49, 63-67 (2009)

9
[26] L. Ardaravičius, O. Kiprijanovič, J. Liberis, Electron transport in a coupled
GaN/AlN/GaN channel of nitride HFET, Lith. J. Phys. 56, 217–222 (2016)

[27] L. Ardaravičius, M. Ramonas, J. Liberis, O. Kiprijanovič, A. Matulionis, J.

Xie, M. Wu, J. H. Leach, H. Morkoç, Electron drift velocity in lattice-matched
AlInN/AlN/GaN channel at high electric fields J. Appl. Phys. 106, 073708 (2009)

[28] L. Ardaravičius, O. Kiprijanovič, J. Liberis, A. Matulionis, X. Li, F. Zhang, M.

Wu, V. Avrutin, Ü. Özgür, H. Morkoç, Hot-electron drift velocity in AlGaN/Al-
N/AlGaN/GaN camelback channel. Semicond. Sci. Technol. 27, 122001 (2012)

[29] J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K.

Wang, H. Xing, D. Jena, Hot phonons in Si-doped GaN. Appl. Phys. Lett. 89,
202117 (2006)

[30] J. M. Barker, D. K. Ferry, D. D. Koleske, R. J. Shul, Bulk GaN and AlGaN/-

GaN heterostructure drift velocity measurements and comparison to theoretical
models. J. Appl. Phys. 97, 063705 (2005).

[31] B. A. Danilchenko, S. E. Zelensky, E. Drok, S. A. Vitusevich, S. V. Danylyuk,

N. Klein, H. Lüth, A. E. Belyaev, V. A. Kochelap, Hot-electron transport in
AlGaN/GaN two-dimensional conducting channels. Appl. Phys. Lett. 85, 5421-
5423 (2004)

[32] L. Ardaravičius, O. Kiprijanovič, H. Alsalman, J. Y. Kwak, Self-heating controlled

current–voltage and noise characteristics in graphene. J. Phys. D: Appl. Phys.
54, 185101 (2021)

[33] B. A. Danilchenko, N. A. Tripachko, A. E. Belyaev, S. A. Vitusevich, H. Hardtde-

gen, H. Luth, High-field quasi-ballistic transport in AlGaN/GaN heterostructures.
Appl. Phys. Lett. 104, 072105 (2014)

[34] L. Guo, X. Yang, A. Hu, Z. Feng, Y. Lv, J. Zhang, J. Cheng, N. Tang, X. Wang,
W. Ge, B. Shen, Hot electron induced nonsaturation current behavior at high
electric field in InAlN/GaN heterostructures with ultrathin barrier. Sci. Rep. 6,
37415 (2016)

[35] L. Ardaravičius, O. Kiprijanovič, E. Šermukšnis, V. Avrutin, Ü. Özgür, H.

Morkoç, Determination of hot-electron drift velocity in (Be)ZnMgO/ZnO 2DEG
channels. Phys. Scr. 98, 015808 (2023)

[36] A. Matulionis, J. Liberis, I. Matulionienė, M., Ramonas, L. F. Eastman, J. R.

Shealy, V. Tilak, A. Vertiatchikh, Hot-phonon temperature and lifetime in a
biased Alx Ga1−x N/GaN channel estimated from noise analysis. Phys. Rev. B 68,
035338 (2003)

10