MITSUBISHI Nch POWER MOSFET

FK30SM-6
HIGH-SPEED SWITCHING USE

FK30SM-6 OUTLINE DRAWING Dimensions in mm

15.9MAX. 4.5

1.5
r

5.0
φ 3.2

20.0
2
4
2 4.4

19.5MIN.
1.0
q w e
5.45 5.45 0.6 2.8

wr

q GATE
¡VDSS ................................................................................ 300V q
w DRAIN
e SOURCE
¡rDS (ON) (MAX) ........................................................... 0.143Ω r DRAIN

¡ID ......................................................................................... 30A

e
¡Integrated Fast Recovery Diode (MAX.) ........150ns TO-3P

APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VDSS Drain-source voltage VGS = 0V 300 V
VGSS Gate-source voltage VDS = 0V ±30 V
ID Drain current 30 A
IDM Drain current (Pulsed) 90 A
IS Source current 30 A
ISM Source current (Pulsed) 90 A
PD Maximum power dissipation 275 W
Tch Channel temperature –55 ~ +150 °C
Tstg Storage temperature –55 ~ +150 °C
— Weight Typical value 4.8 g

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FK30SM-6
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 300 — — V
V (BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 300V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 15A, VGS = 10V — 0.110 0.143 Ω
VDS (ON) Drain-source on-state voltage ID = 15A, VGS = 10V — 1.65 2.15 V
yfs Forward transfer admittance ID = 15A, VDS = 10V 10 15 — S
Ciss Input capacitance — 2850 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 580 — pF
Crss Reverse transfer capacitance — 110 — pF
td (on) Turn-on delay time — 45 — ns
tr Rise time — 120 — ns
VDD = 150V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 330 — ns
tf Fall time — 120 — ns
VSD Source-drain voltage IS = 15A, VGS = 0V — 1.5 2.0 V
Rth (ch-c) Thermal resistance Channel to case — — 0.45 °C/W
trr Reverse recovery time IS = 30A, dis/dt = –100A/µs — — 150 ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA

300 3
2
POWER DISSIPATION PD (W)

250 102
DRAIN CURRENT ID (A)

7
5
200 3 tw=100µs
2

150 101 1ms

7
5
100 3 10ms
2
100ms
100 TC = 25°C
50 Single Pulse DC
7
5
0 3
0 50 100 150 200 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FK30SM-6
HIGH-SPEED SWITCHING USE

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS = 20V VGS=20V
50 10V 20 10V
TC = 25°C TC = 25°C
Pulse Test Pulse Test 5V
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

40 16
6V
PD =
30 12 275W

20 8
5V 4.5V
PD =
10 275W 4

4V 4V
0 0
0 10 20 30 40 50 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
10 0.20
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)

8 0.16 VGS = 10V

VOLTAGE VDS (ON) (V)

ID = 50A

6 0.12 20V

30A
4 0.08

2 15A 0.04
TC = 25°C
Pulse Test
0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
40 102
TC = 25°C 7 VDS = 10V
VDS = 50V Pulse Test
Pulse Test 5
DRAIN CURRENT ID (A)

32
FORWARD TRANSFER
ADMITTANCE yfs (S)

3
2 TC = 25°C
24
75°C
101 125°C
16 7
5

3
8
2

0 100 0
0 4 8 12 16 20 10 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FK30SM-6
HIGH-SPEED SWITCHING USE

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
104 103
7 7
5
Ciss 5 td(off)
3

SWITCHING TIME (ns)

2
Ciss, Coss, Crss (pF)

3
CAPACITANCE

103 2
7
5 Coss tf
3 102
2 tr
7
102 Crss 5 td(on)
7
5 3 Tch = 25°C
3 Tch = 25°C 2 VDD = 150V
2 f = 1MHz VGS = 10V
VGS = 0V RGEN = RGS = 25Ω
101 101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 100 2 3 5 7 101 2 3 5 7 102

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 50
GATE-SOURCE VOLTAGE VGS (V)

Tch = 25°C VGS = 0V

ID = 30A TC=125°C Pulse Test
SOURCE CURRENT IS (A)

16 40
VGS = 50V 75°C

12 30
100V 25°C
200V
8 20

4 10

0 0
0 40 80 120 160 200 0 0.8 1.6 2.4 3.2 4.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 5.0
7 VGS = 10V VDS = 10V
ID = 1mA
GATE-SOURCE THRESHOLD

5 ID = 1/2ID
Pulse Test 4.0
VOLTAGE VGS (th) (V)

3
2
3.0
100
7 2.0
5

3
1.0
2

10–1 0
0 50 100 150 200 250 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FK30SM-6
HIGH-SPEED SWITCHING USE

BREAKDOWN VOLTAGE VS. DIODE REVERSE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

CHANNEL TEMPERATURE SOURCE CURRENT CHARACTERISTIC

(TYPICAL) (TYPICAL)

REVERSE RECOVERY CURRENT Irr (A)

1.4 103 102
dis/dt = –100A/µs

REVERSE RECOVERY TIME trr (ns)

VGS = 0V 7 VGS = 0V 7
ID = 1mA 5 5
VDD = 150V
1.2
3 3
2 2
1.0
102 trr 101
0.8 7 7
5 5
Irr
3 3
0.6
2 2
Tch = 25°C
Tch = 150°C
0.4 101 100
–50 0 50 100 150 100 2 3 5 7 101 2 3 5 7 102

CHANNEL TEMPERATURE Tch (°C) SOURCE CURRENT IS (A)

DIODE REVERSE VS.

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

SOURCE CURRENT dis/dt CHARACTERISTIC TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
REVERSE RECOVERY CURRENT Irr (A)

5 5 101
REVERSE RECOVERY TIME trr (ns)

7
3 3 5
2 2 3
2
trr
102 101 100
7 D=1
7 7 5
5 5 3 0.5
2 PDM
3 3 0.2
Irr IS = 30A 10–1
tw
2 2 7 0.1
VGS = 0V T
5 0.05
VDD = 150V D= tw
101 100 3 0.02 T
Tch = 25°C 2 0.01
7 7 Single Pulse
Tch = 150°C
5 5 10–2
101 2 3 5 7 102 2 3 5 7 103 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

SOURCE CURRENT dis/dt (–A/µs) PULSE WIDTH tw (s)

Feb.1999