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Fm600tu 2a
Fm600tu 2a
Fm600tu 2a
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FM600TU-2A
APPLICATION
AC motor control of forklift (battery power source), UPS
110
6.5 97 ±0.25
15.2 70.9
16.5 16 32 16
36 36
10 10 35 ±1.0
30 30 26 +1.0
−0.5
7 7
6.5
(6)
(6)
P N
11.5
(14.5)
(17.5)
4
22.57
22.75
(15.8)
3 6.5
L A B E L
1 13
9.1
7
14
67 ±0.25
3.96
5-6.5
3
75
80
90
9.2
(8.7)
38
4-φ6.5
MOUNTING HOLES 12 6
(14.5)
(6)
U V W
14 14 14
7-M6NUTS 14
20 20 20
(SCREWING DEPTH)
16.5 32 32
A B
Tc measured point
25
Feb. 2009
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
2
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
PERFORMANCE CURVES
9V
300 300
200 200
100 100
Tch = 25°C
0 0
0 0.2 0.4 0.6 0.8 1.0 5 7 9 11 13 15
1.8
ON-STATE RESISTANCE rDS(ON) (mΩ)
ID = 300A
1.6
6
1.4
VGS = 12V 5 VDS = 10V
DRAIN-SOURCE
0.8 3
0.6
2
0.4
1
0.2
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
5
1.6 Ciss
3
CAPACITANCE (nF)
DRAIN-SOURCE
2
1.2
101
0.8 7
5
ID = 600A Coss
3
0.4
ID = 300A 2 Crss
VGS = 0V
ID = 150A
0 100 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Feb. 2009
3
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FREE-WHEEL DIODE
GATE CHARGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL) Chip
20 103
ID = 300A 7 VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)
3
4
2
0 101
0 500 1000 1500 2000 2500 0.5 0.6 0.7 0.8 0.9 1.0
HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
103 104
7
7 5
5
3
td(off)
SWITCHING TIME (ns)
2
3
tr
2 103 td(off)
td(on) 7
5 tf
td(on)
102 3
7 tr 2
Conditions: Conditions:
5 tf 102
VDD = 48V VDD = 48V
7
3 VGS = ±15V 5 VGS = ±15V
RG = 4.2Ω 3 ID = 300A
2
Tch = 125°C 2 Tch = 125°C
Inductive load Inductive load
101 1 101
10 2 3 5 7 102 2 3 5 7 103 0 5 10 15 20 25 30 35 40 45
HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 102
7 7
5 5
Esw(off) 3
SWITCHING LOSS (mJ/pulse)
3 2
2 Esw(on) 101 Esw(off)
7
100 5
7 3 Conditions:
5 2 VDD = 48V
3 100 Esw(on) VGS = ±15V
Err 7
2 5 ID = 300A
Conditions: 3
Err
10–1 Tch = 125°C
VDD = 48V 2
7 Inductive load
5 VGS = ±15V 10–1
7
3
RG = 4.2Ω 5
2 Tch = 125°C 3
Inductive load 2
10–2 1 10–2
10 2 3 5 7 102 2 3 5 7 103 0 5 10 15 20 25 30 35 40 45
Feb. 2009
4
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
NORMALIZED TRANSIENT
3 3
2 trr 2
7 Irr 7 7
5 5 5
3 3 3
2 2 2
Conditions:
101 VDD = 48V 10–2 10–2
7 7 7
5 VGS = ±15V 5 5
3 RG = 4.2Ω 3 Single pulse 3
2 Tch = 25°C 2 Tch = 25°C 2
Inductive load Per unit base = Rth(ch-c) = 0.13K/W
100 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3
CHIP LAYOUT
(110)
(97)
47.2
P N
29.2
49.2
51.8
7 1 13
TrUP TrVP TrWP
14
(90)
(67)
(80)
12 6 LABEL SIDE
U V W
24.8
57.8
90.8
Feb. 2009