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1. Use the expressions for carrier densities of electrons and holes in intrinsic semiconductors to
show that the carrier density in intrinsic semiconductors is(𝑁𝑁௩) భ మ𝑒 షಶ మ ೖ .
2. Discuss the variation of intrinsic carrier concentration with temperature
3. Describe Hall Effect. Derive the expression for Hall voltage and Hall coefficient for a
semiconductor and discuss its applications.
discuss its applications. 4. Describe the principle, construction and working of a photodiode.
Draw and explain its V-I characteristics
Discuss the Drift and Diffusion phenomenon in semiconductors. Write down the expression
for their current densities.
Show that for p type semiconductor np =√2𝑁 ( ଶగℎ ∗் ℎ మ ) య ర𝑒 ಶೡష ಶಲ మ
಼ ’
Draw and Explain the V-I characteristics of a PN junction diode under forward and reverse
bias.’=