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SEMESTER
TEST1
QUESTIONS NMC123
Presenter: SAMSON KABASA
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Contents
Contents ......................................................................................................................................... 1
1. Structure of Crystalline Solids................................................................................................. 2
2. Defects in Crystalline Materials ............................................................................................. 6
3. Diffusion in Solids ................................................................................................................... 10
4. References ............................................................................................................................ 14
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Section Question 1
The diagram below shows a unit cell for graphite. Given the atomic radius of
carbon 7.1x10-5µm and the ratio of c/a is 2.36.
Answer:
2
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Section Question 2
For the unit cell below, the atomic radius is believed to be 0.124nm.
a) Give the relationship between the atomic radius R and the lattice
parameter (a).
b) Determine the atomic packing factor(APF) of this specific unit cell.
c) Determine the planar density in atom/m2 of the closest packed plane of
the iron unit cell.
Answer:
3
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Section Question 3
The unit cell below contains ions, A, B and C. A and B are positively charge
whereas C is negatively charged.
a) Determine the chemical formula you would expect for this ionic solid in
terms of A, B and C.
b) Consider a scenario where all C ions are removed and the ionic radius of
A and B are represented by R and Z respectively. Give the value of the
lattice parameter in terms of R and Z. Show all the necessary steps.
c) Determine the coordination number of A and B ions.
d) Consider Gallium which has an orthorhombic structure with a =
0.45258nm, b =0.45186nm and c = 0.76570nm. The atomic radius is
believed to be 1.218 Angstrom. Density is 5904kg/m3 and the atomic
weight is 69.72 g/mol. Calculate the Atomic Packaging factor
e) What is the stacking sequence of the unit cell?
Answer:
4
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Section Question 1
From Lead, Iron and Nickel, which element has the highest possibility of
forming a solid solution with Copper as a parent metal.
Answer:
6
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Section Question 2
A micrograph of steel at 300X shows the ASTM grain size number to be 10.
Determine the average number of grains you can see in one centimetre square
area.
Answer:
Section Question 3
Materials with higher vacancies are most likely to form a substitutional solid
solution. Zinc at 1050˚C has 4.68x10-27 vacancies/cm2. Calculate the number
of vacancies for Ni at the same temperature with energy needed for vacancy
formation being 0.71eV. Which material will most likely form a substitutional
solid solution.
Answer:
7
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Section Question 4
Answer:
8
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Section Question 5
Calculate the ASTM grain size number of a metal where 37.5 grains are
counted using an eyepiece with diameter 27.4mm and at a magnification of
X250.
Answer
Question 6
Consider a Niobium rod whose density is 0.7% less than it’s theoretical
density. What is the rods vacancy concentration at this temperature, assuming
it has an FCC crystal structure?
Answer
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3. Diffusion in Solids
Section Question 1
Answer:
10
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Section Question 2
At 4 µm below the surface the ratio is 48:52 for a metal sheet containing
50%Ni63 and 50% non-radioactive nickel. It is assumed the gradient is linear
between the two points. Previous experiments show that self-diffusion
coefficient of nickel in nickel is 1.6x10-9 cm2/sec at 1000˚C. Nickel has a FCC
structure and a lattice parameter at 1000˚C is 3.6Angstrom. Determine the flux
of Ni63 at that temperature through the plane of 4 µm below the surface.
Answer:
11
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Section Question 3
A customer requires 2000 doped silicon boards for making their computer
processors. The specification is that there should be 0.3 wt% Ga at a depth of
3µm below the surface of the board. The producer claims they can achieve this
with their equipment, which includes an oven that can reach a maximum
temperature of 900oC. The process can maintain a Gallium surface
concentration of 1.39% for one sheet at a time. The customer requires their
product to be delivered within 6 months to meet a target for their own product
launch. The diffusion coefficient of Ga in Silicon follows the equation:
D = 0.005 e[−(2.70eV / kT)] cm2 sec−1
a) Is it a feasible idea to take up the contract and produce the boards for the
customer? Justify your answer with applicable calculations.
b) What suggestion can you make to the producers of the silicon wafers?
Answer:
12
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Question 4
Solution
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4. References
[4] V. Kurup Materials Science Past Test Papers 2012, 2013, 2014
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