MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PM450CLA060

FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.8V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
• 3φ 450A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (Fo available from
all arm devices)
• Acoustic noise-less 37kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

172
11 2 (24)
162
6 50±0.5 50±0.5 50±0.5
17 +1.0
–0.5

12-M6 NUTS 14 22 28 22 28 22 6
6.5

20
13.5
5.5

12 11 10 9 8 7
7.75

9.08 50 50
55

31.84 31.84 31.84

L A B E L

3.22 3-2.54 3.22 3-2.54 3.22 3-2.54

110±0.5
94.5

150
123

137
99

13 16 17 20 21 24 25 28 29 3233 36
14 15 18 19 22 23 26 27 30 31 34 35
21 3-2.54 21 3-2.54 21 3-2.54
53.75 50 53.75
3.75

8-φ5.5
8-φ3.5

1 2 3 4 5 6
MOUNTING HOLES
(15.5)

12 12 12 12 12 12 12
17 17 17 17 17 17 (SCREWING DEPTH)

Terminal code
6-φ2.5 24- 0.64 1. N 7. W 13. VUPC 19. UN 25. VVNC 31. WP
2. P 8. W 14. UPFO 20. VUN1 26. VNFO 32. VWP1
3. N 9. V 15. UP 21. VVPC 27. VN 33. VWNC
36.6
35.5

4. P 10. V 16. VUP1 22. VPFO 28. VVN1 34. WNFO

5. N 11. U 17. VUNC 23. VP 29. VWPC 35. WN
6. P 12. U 18. UNFO 24. VVP1 30. WPFO 36. VWN1

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

WN VWN1 WP VWP1 VN VVN1 VP VVP1 UN VUN1 UP VUP1

VWNC WNFO VWPC WPFO VVNC VNFO VVPC VPFO VUNC UNFO VUPC UPFO

1.5k 1.5k 1.5k 1.5k 1.5k 1.5k

Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc

Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT

N W P N V P N U P

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
±IC Collector Current TC = 25°C 450 A
±ICP Collector Current (Peak) TC = 25°C 900 A
PC Collector Dissipation TC = 25°C (Note-1) 1041 W
Tj Junction Temperature –20 ~ +150 °C

CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC
VD Supply Voltage 20 V
VUN1-VUNC, VVN1-VVNC, VWN1-VWNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
VCIN Input Voltage 20 V
UN-VUNC, VN-VVNC, WN-VWNC
Applied between : UPFO-VUPC, VPFO-VVPC, WPFO-VWPC
VFO Fault Output Supply Voltage 20 V
UNFO-VUNC, VNFO-VVNC, WNFO-VWNC
Sink current at UPFO, VPFO, WPFO, UNFO, VNFO, WNFO
IFO Fault Output Current 20 mA
terminals

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V, Inverter Part,
VCC(PROT) Tj = +125°C Start 400 V
SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms

THERMAL RESISTANCES
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Junction to case Thermal Inverter IGBT (per 1 element) (Note-1) — — 0.12
Rth(j-c)F Resistances Inverter FWDi (per 1 element) (Note-1) — — 0.19
°C/W
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance — — 0.014
Thermal grease applied (Note-1)
(Note-1) Tc measurement point is just under the chip.
If you use this value, Rth(f-a) should be measured just under the chips.

Table 1: Tc (under the chip) measurement point is below. (Unit : mm)

arm UP VP WP UN VN WN
axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X 26.5 23.9 76.5 73.9 126.5 123.9 23.4 26.0 73.4 76.0 123.4 126.0
Y 85.5 70.5 85.5 70.5 85.5 70.5 24.5 39.5 24.5 39.5 24.5 39.5

7 13

Name
plate
Bottom
side view
Y

6 1

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter VD = 15V, IC = 450A Tj = 25°C — 1.7 2.2
VCE(sat) V
Saturation Voltage VCIN = 0V (Fig. 1) Tj = 125°C — 1.8 2.3
VEC FWDi Forward Voltage –IC = 450A, VD = 15V, VCIN = 15V (Fig. 2) — 2.6 3.7 V
ton 0.5 1.0 2.4
VD = 15V, VCIN = 0V↔15V
trr — 0.2 0.4
VCC = 300V, IC = 450A µs
tc(on) Switching Time — 0.4 1.0
Tj = 125°C
toff — 2.2 3.5
Inductive Load (Fig. 3, 4)
tc(off) — 0.6 1.1
Collector-Emitter Tj = 25°C — — 1
ICES VCE = VCES, VCIN = 15V (Fig. 5) mA
Cutoff Current Tj = 125°C — — 10

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
V*N1-V*NC — 11 18
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 11 18
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN-VUNC, VN-VVNC, WN-VWNC 1.7 2.0 2.3
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) 900 — — A
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 0.2 — µs
Time
OT VD = 15V Trip level 135 145 —
Over Temperature Protection °C
OTr Detect Tj of IGBT chip Reset level — 125 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VFO = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
— Mounting torque Main terminal screw : M6 3.5 4.0 4.5 N•m
— Mounting torque Mounting part screw : M5 2.5 3.0 3.5 N•m
— Weight — — 1250 — g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Condition Recommended value Unit
VCC Supply Voltage Applied across P-N terminals ≤ 400 V
Applied between : VUP1-VUPC, VVP1-VVPC, VWP1-VWPC
VD Control Supply Voltage VUN1-VUNC, VVN1-VVNC, VWN1-VWNC 15 ± 1.5 V
(Note-3)
VCIN(ON) Input ON Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC ≤ 0.8
V
VCIN(OFF) Input OFF Voltage UN-VUNC, VN-VVNC, WN-VWNC ≥ 9.0
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
Arm Shoot-through
tdead For IPM’s each input signals (Fig. 7) ≥ 3.0 µs
Blocking Time

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)

IN IN

VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)

VD (all) VD (all)
Fig. 1 VCE(sat) Test Fig. 2 VEC Test

a) Lower Arm Switching

Fo trr
VCIN Signal input VCE
Irr Ic
(15V) (Upper Arm)
CS Vcc
90%
Signal input Fo 90%
VCIN (Lower Arm)

VD (all) Ic 10% 10%

b) Upper Arm Switching 10% 10%

Fo tc(on) tc(off)
VCIN Signal input
(Upper Arm) VCIN
CS Vcc td(on) tr td(off) tf
VCIN Fo
Signal input
(15V) (Lower Arm) (ton= td(on) + tr) (toff= td(off) + tf)

VD (all) Ic

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

VCIN
Short Circuit Current

P, (U,V,W)
A Constant Current

IN SC
Fo Pulse VCE
VCIN
(15V) Ic

U,V,W, (N) Fo
VD (all)

toff(SC)
Fig. 5 ICES Test

Fig. 6 SC test waveform

IPM’ input signal VCIN

(Upper Arm)
1.5V 2V 1.5V t
0V
IPM’ input signal VCIN
(Lower Arm)
2V 1.5V 2V t
0V
tdead tdead tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

20k ≥10µ VUP1

Vcc OT P
→ UPFO 1.5k OUT
Fo +
VD IF
UP Si
In
–
VUPC
GND GND
≥0.1µ U
VUN1 OT
Vcc
UNFO 1.5k OUT
Fo
VD UN
Si
In
VUNC N
GND GND

VVP1 OT
Vcc P
VPFO 1.5k OUT
Fo
VD VP Si
In
VVPC
GND GND
V
M
VVN1 OT
Vcc
VNFO 1.5k OUT
Fo
VD VN Si
In
VVNC N
GND GND

VWP1 OT P
Vcc
WPFO 1.5k OUT
Fo
VD WP Si
In
VWPC
GND GND
W
VWN1 OT
Vcc
WNFO 1.5k OUT
Fo
VD WN Si
In
VWNC N
GND GND

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.

Jul. 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
500 2.5

SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 15V VD = 15V
COLLECTOR CURRENT IC (A)

400 2

COLLECTOR-EMITTER
13V
VD = 17V

300 1.5

200 1

100 0.5
Tj = 25°C
Tj = 125°C
0 0
0 0.5 1 1.5 2 2.5 0 100 200 300 400 500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS SWITCHING TIME CHARACTERISTICS
(TYPICAL) (TYPICAL)
2.5 101
SATURATION VOLTAGE VCE (sat) (V)

VCC = 300V
SWITCHING TIME tc(on), tc(off) (µs)

7
5 VD = 15V
2 4 Tj = 25°C
COLLECTOR-EMITTER

3 Tj = 125°C
2 Inductive load
1.5
100
1 7
5 tc(off)
4
3
0.5 IC = 450A tc(on)
Tj = 25°C 2
Tj = 125°C
0 10–1 1
12 13 14 15 16 17 18 10 2 3 4 5 7 102 2 3 4 5 7 103

CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A)

SWITCHING TIME CHARACTERISTICS SWITCHING LOSS CHARACTERISTICS

SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

(TYPICAL) (TYPICAL)
101 102
7
7 5
ESW(off)
SWITCHING TIME ton, toff (µs)

5 4
3
4
2
3
2 toff 101 ESW(on)
7
5
4
100 ton 3 ESW(on)
7 2
5 100 VCC = 300V
4 VCC = 300V
7 VD = 15V
3 VD = 15V 5
4 ESW(off) Tj = 25°C
Tj = 25°C 3
2 Tj = 125°C
Tj = 125°C 2 ESW(off)
Inductive load ESW(on) Inductive load
10–1 1 10–1
10 2 3 4 5 7 102 2 3 4 5 7 103 101 2 3 4 5 7 102 2 3 4 5 7 103

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

Jul. 2005
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PM450CLA060
FLAT-BASE TYPE
INSULATED PACKAGE

DIODE FORWARD CHARACTERISTICS DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

101 103

REVERSE RECOVERY CURRENT lrr (A)

103
VD = 15V 7 VCC = 300V

REVERSE RECOVERY TIME trr (µs)

7
7 5 VD = 15V 5
5 4 4
3 Tj = 25°C 3
4
3
2 Tj = 125°C 2
I rr
2 100 Inductive load 102
7 7
5 5
4 4
102 3 3
7 2 2
5 10–1 trr 101
4 7 7
3 5 5
4 4
2 3 3
Tj = 25°C
2 2
Tj = 125°C
101 10–2 100
0 0.5 1 1.5 2 2.5 3 101 2 3 4 5 7 102 2 3 4 5 7 103

EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR RECOVERY CURRENT –IC (A)

TRANSIENT THERMAL
ID VS. fc CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT PART)
60 100
P-side or N-side 7
THERMAL IMPEDANCE Zth (j – c)

5
VD = 15V
NORMALIZED TRANSIENT
CIRCUIT CURRENT ID (mA)

50 3
Tj = 25°C
2
40 10–1
7
5
30 3
2
20 10–2
7
5
10 3
2
Single Pulse
Per unit base = Rth(j – c)Q = 0.12°C/W
0 10–3 –5
0 5 10 15 20 25 10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101

CARRIER FREQUENCY fc (kHz) TIME (s)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
100
7
THERMAL IMPEDANCE Zth (j – c)

5
NORMALIZED TRANSIENT

3
2

10–1
7
5
3
2

10–2
7
5
3
2
Single Pulse
Per unit base = Rth(j – c)F = 0.19°C/W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101

TIME (s)

Jul. 2005