DATA SHEET

www.onsemi.com

General Purpose
Transistors COLLECTOR
3

NPN Silicon 2
BASE

2N3903, 2N3904 1
EMITTER
Features
• Pb−Free Packages are Available*

TO−92
MAXIMUM RATINGS CASE 29
STYLE 1
Rating Symbol Value Unit
Collector −Emitter Voltage VCEO 40 Vdc 1
12 2
Collector −Base Voltage VCBO 60 Vdc 3 3
STRAIGHT LEAD BENT LEAD
Emitter −Base Voltage VEBO 6.0 Vdc BULK PACK TAPE & REEL
Collector Current − Continuous IC 200 mAdc AMMO PACK

Total Device Dissipation PD

@ TA = 25°C 625 mW
Derate above 25°C 5.0 mW/°C MARKING DIAGRAMS
Total Device Dissipation PD
@ TC = 25°C 1.5 W
Derate above 25°C 12 mW/°C 2N
390x
Operating and Storage Junction TJ, Tstg −55 to +150 °C YWWG
Temperature Range G

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W x = 3 or 4
Y = Year
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W WW = Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the G = Pb−Free Package
device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location)
assumed, damage may occur and reliability may be affected.
1. Indicates Data in addition to JEDEC Requirements.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

August, 2021 − Rev. 9 2N3903/D
 2N3903, 2N3904

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2) hFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 20 −
2N3904 40 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3903 35 −
2N3904 70 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3903 50 150
2N3904 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3903 30 −
2N3904 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 15 −
2N3904 30 −
Collector −Emitter Saturation Voltage (Note 2) VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc − 0.3
Base −Emitter Saturation Voltage (Note 2) VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 250 −
2N3904 300 −
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance hie kW
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 1.0 8.0
2N3904 1.0 10
Voltage Feedback Ratio hre X 10− 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
Small−Signal Current Gain hfe −
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903 50 200
2N3904 100 400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mmhos
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N3903 − 6.0
2N3904 − 5.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td − 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, 2N3903 ts − 175 ns
IB1 = IB2 = 1.0 mAdc) 2N3904 − 200

Fall Time tf − 50 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

www.onsemi.com
2
 2N3903, 2N3904

ORDERING INFORMATION
Device Package Shipping†
2N3903RLRM TO−92 2000 / Ammo Pack
2N3904 TO−92 5000 Units / Bulk
2N3904G TO−92 5000 Units / Bulk
(Pb−Free)

2N3904RLRA TO−92 2000 / Tape & Reel

2N3904RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

2N3904RLRM TO−92 2000 / Ammo Pack

2N3904RLRMG TO−92 2000 / Ammo Pack
(Pb−Free)

2N3904RLRP TO−92 2000 / Ammo Pack

2N3904RLRPG TO−92 2000 / Ammo Pack
(Pb−Free)

2N3904RL1G TO−92 2000 / Tape & Reel

(Pb−Free)

2N3904ZL1 TO−92 2000 / Ammo Pack

2N3904ZL1G TO−92 2000 / Ammo Pack
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

+3 V
DUTY CYCLE = 2%
300 ns
+10.9 V 275

10 k
-0.5 V
< 1 ns CS < 4 pF*

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

+3 V
10 < t1 < 500 ms t1
+10.9 V
DUTY CYCLE = 2%
275

10 k
0

1N916 CS < 4 pF*

-9.1 V′
< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

www.onsemi.com
3
 2N3903, 2N3904

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time

500 500
t′s = ts - 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

www.onsemi.com
4
 2N3903, 2N3904

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 14
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA IC = 50 mA
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 mA
IC = 50 mA 6
4
4

2 SOURCE RESISTANCE = 500 W 2

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

50

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

www.onsemi.com
5
 2N3903, 2N3904

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
0.5 -55°C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.2 1.0
TJ = 25°C
1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C
qVC FOR VCE(sat)
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)

0.8 0 -55°C TO +25°C

VBE @ VCE =1.0 V
0.6 -0.5
-55°C TO +25°C
0.4 -1.0
VCE(sat) @ IC/IB =10 +25°C TO +125°C
0.2 -1.5 qVB FOR VBE(sat)

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
SCALE 1:1 ISSUE AM
DATE 09 MAR 2007

12 1
2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
AMMO PACK

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D G 2.40 2.80
J 0.39 0.50
G K 12.70 ---
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

STYLES ON PAGE 2

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 1 PAGE 1 OFXXX3
 TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 2 PAGE 2 OFXXX3
 DOCUMENT NUMBER:
98ASB42022B

PAGE 3 OF 3

ISSUE REVISION DATE

AM ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. 09 MAR 2007

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

© Semiconductor Components Industries, LLC, 2007 Case Outline Number:

March, 2007 − Rev. 11AM 29
 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS: ONLINE SUPPORT: www.onsemi.com/support
Technical Library: www.onsemi.com/design/resources/technical−documentation For additional information, please contact your local Sales Representative at
onsemi Website: www.onsemi.com www.onsemi.com/support/sales