MOS Capacitor

ELECTRONIC DEVICES

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MOS Capacitor
 Metal oxide semiconductor capacitor.

MOS-Capacitor with N-type substrate:

1. Accumulation mode:

→ VGS = +ve [gate is +ve biased w.r.t. subtract]

→ Accumulation of –ve charges at the interface of SiO2 and silicon

→Electrons accumulate below SiO2 forming a thin accumulation layer.

→ MOS capacitor behaves similar to parallel place capacitor.

→ Capacitance of this action is called oxide capacitance.

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A=W×L

ϵox = 3.9 ϵo

2. Depletion mode:

→ VGS = -ve (Gate –ve bias w.r.t. substrate)

→ If |VG|↑Wd↑ ⇒ immobile change ↑ (depletion charge)

→ -ve charge of SiO2 will repel electrons of substrate.

Hence electrons move down and a depletion layer appears below SiO2.

⇒ Depletion layer has immobile charge in forms of +ve donor impurity ions and we call it depletion layer.

⇒ This change in immobile charge with gate voltage results in depletion capacitance.

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→ Net MOS Capacitance is

ϕs

ϕs → surface potential

⇒ At one value of VG depletion width becames maximum.

⇒ Thus Cd and MOS capacitance became minimum

3. Inversion Mode:

→ Gate is –vely bias with respect to substance by large voltage.

⇒ Hole density in inversion layer is less than electron density of substrate then it is weak inversion.

i.e. → p(hole)(channel)< h(substrate)

→ p(hole) = h(substrate) on set of strong inversion.

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→ p(hole) > h(substrate) strong inversion

⇒ Inversion charge α VGS - VT

VT → threshold voltage of MOS FET

⇒ Depletion width remain constant at Wd max and immobile charge also remains constant hence depletion
capacitance disappear.

⇒ MOS Capacitance ⇒ CMOS = Cox

Flat Band Voltage: (VFB)

→ It is voltage developed at the oxide semi conductor.

→ VFB is given as

Qox = Interface charge in c/m2

Φms = Metal semiconductor work function difference in w/t.

Φms = ϕm - ϕs

Φm = Work function of metal (V)

Φs = Work function of semiconductor (V)

Qox = qQss’

q = 1.6 × 10-13 columb

Qss’ = trapped charger located at oxide semiconductor interface/unit cross sectional area.

Equation of threshold voltage in terms of flat band voltage:

For MOS Capacitor

VT = VFS + 2ϕF….(1)

……(2)

…..(3)

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General equation of MOS capacitor:

1. Surface potential ( s, ϕs )

ϕs = 2ΦF; ΦF = Fermi potential

→ (unit ‘volt’)

2. Maximum charge density in space/d (charge pen unit area)

|Qsd’(max)| = qNA Wd c/m2

For p type substrate

For n type substrate

3. Peak/maximum electric field in semiconductor:

4. Electric field in oxides:

5. Potential across SiO2 (Vox)

→ space charge density or depletion charge density.

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