EE 236: Experiment 9

Lab 9: Mobility of Charge Carriers in N-channel

MOSFET and Temperature Dependence

Vikas Kumar, 210070093

20th October 2023

Contents
1 Overview of the experiment 1
1.1 Aim of the experiment . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Basics for the experiment . . . . . . . . . . . . . . . . . . . . . . 1
1.3.1 COULOMB SCATTERING . . . . . . . . . . . . . . . . . 1
1.3.2 PHONON SCATTERING . . . . . . . . . . . . . . . . . . 1
1.3.3 IMP POINTS . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Lab Exercises 2
2.1 Part 2: Temperature Dependence . . . . . . . . . . . . . . . . . . 4
2.1.1 Trends observed and reasons . . . . . . . . . . . . . . . . 5

3 Experiment completion status 5

1 Overview of the experiment
1.1 Aim of the experiment

• To study the effect on carrier mobility with change in temperature

and voltage and understand how it can affect possible practical
applications.

1.2 Methods

• We built circuits for all the parts on breadboard,appropriately con-

necting the LM35 sensor and oven as per experiment requirements
and noting down all the required readings.
• We plotted the required graphs and did appropriate calculations to
obtain β and see it’s variation with voltage at different tempera-
tures.

1.3 Basics for the experiment

1.3.1 COULOMB SCATTERING

• This type of scattering is associated with the presence of electro-

static centers affecting the motion of channel carriers. The scatter-
ers are mainly impurity ions, interface states, charges in the oxide
and the gate material.
• The mobility due to Coulomb scattering varies with temperature
as T 3/2 .

1.3.2 PHONON SCATTERING

• The atoms in a semiconductor crystal have a certain amount of

thermal energy at temperatures above absolute zero that causes
the atoms to randomly vibrate about their lattice position within
the crystal.

1
 • The lattice vibrations cause a disruption in the perfect periodic
potential function. A perfect periodic potential in a solid allows
electrons to move unimpeded, or with no scattering, through the
crystal.
• But the thermal vibrations cause a disruption of the potential func-
tion, resulting in an interaction between the electrons or holes and
the vibrating lattice atoms. This lattice scattering is also referred
to as phonon scattering.
• The mobility due to Phonon scattering varies with temperature as
T 3/2 .

1.3.3 IMP POINTS

• At lower electric fields, the dominating scattering mechanism is

Coulomb scattering. Here, the mobility increases with increase in
electric field.
• At higher electric fields, the dominating scattering mechanism is
Phonon scattering (and eventually surface roughness). Here, the
mobility decreases gradually with increase in electric field.

2 Lab Exercises
Part 1:Characterizing the NMOS

• Circuit for both parts is the same just the bias is different so we
attach the circuit and the readings(including β) for this part below.

2
 Figure 1: Circuit for both parts

sqrt(Id )V sVGS

All readings for part-1

Value of VT obtained is about =1.21 Volts
Value of β obtained is about =0.56 (both values obtained by np.polyfit()
using experimental values)

3
2.1 Part 2: Temperature Dependence

• Below are the readings for this part.

Readings at 50C

Readings at 30C

4
 Plot of β vs Vgs

Readings at 70C

2.1.1 Trends observed and reasons

• As the temperature increase, the tends to increase at low VGS .Conversely,

at high VGS , increasing the temperature can lead to a decrease in .
• This can be explained as Coulomb scattering dominant at low VGS
and phonon scattering dominant at high VGS and their temperature
dependence.

3 Experiment completion status

I completed the lab work including all plots and assigned analysis suc-
cessfully