Post Lab Report: Mobility of Charge Carriers in

N-Channel MOSFET and Temperature

Dependence
Mokashi Harish Mahesh
210070053
November 5, 2023

1 Experimental Data and Results

1.1 Part 1: Characterizing the NMOS
The following table shows the experimental data for ID vs. VGS in the satu-
rated region at room temperature (25°C). The average slope of the curve was
calculated as 16.63, and the value of β was determined to be 553.1138 mA/V2 .
The observed threshold voltage was 1.02V.
√
VGS (V) ID (mA) ID
0.00 0.00 0.00
0.27 0.00 0.00
0.40 0.00 0.00
0.68 0.00 0.00
0.95 0.00 0.00
1.02 0.01 0.10
1.20 0.26 0.51
1.35 3.08 1.75
1.47 10.30 3.21
1.61 29.30 5.41
1.81 88.40 9.40
1.98 184.30 13.57

1
 Figure 1: Id vs Vgs saturation region

1.2 Part 2: Mobility Extraction and Temperature Depen-

dence
The next set of tables presents the experimental data for ID vs. VGS at different
temperatures: 30°C, 50°C, and 70°C. The tables include data for both VGS =
1.8V and VGS = 8V. The values of β for each data point are also included.

1.2.1 VGS = 1.8V

VGS (V) ID (mA) β (mA/V2 )

1.64 0.02 0.10
1.80 0.06 0.21
2.02 0.15 0.36
2.25 0.20 0.36
2.42 0.30 0.45
2.66 0.34 0.42
2.85 0.37 0.40
3.07 0.39 0.37
3.25 0.40 0.35
3.40 0.41 0.33
3.61 0.42 0.31
3.84 0.43 0.28
4.04 0.44 0.27
5.07 0.47 0.21
6.13 0.49 0.17
7.09 0.50 0.14
8.00 0.51 0.13
9.30 0.52 0.11
10.04 0.53 0.10

2
1.2.2 VGS = 8V

VGS (V) ID (mA) β (mA/V2 )

1.62 0.02 0.11
1.80 0.07 0.24
2.02 0.16 0.38
2.25 0.26 0.47
2.42 0.30 0.45
2.66 0.34 0.42
2.85 0.36 0.39
3.07 0.37 0.35
3.25 0.38 0.33
3.40 0.39 0.31
3.61 0.40 0.29
3.84 0.41 0.27
4.04 0.42 0.26
5.07 0.44 0.20
6.13 0.47 0.16
7.09 0.48 0.14
8.00 0.49 0.12
9.30 0.50 0.10
10.04 0.50 0.10

(a) beta vs T at high Vgs (b) beta vs T at low Vgs

1.3 Summary of β for Different Temperatures

The following tables summarize the values of β for VGS = 1.8V and VGS = 8V
at different temperatures.

3
1.3.1 VGS = 1.8V

T (°C) β (mA/V2 )
30 0.21
50 0.24
70 0.28

1.3.2 VGS = 8V

T (°C) β (mA/V2 )
30 0.13
50 0.12
70 0.11

Figure 3: beta vs Vgs linear at 3 temps

2 Conclusion
The experimental data and results presented in this report provide valuable
insights into the mobility of charge carriers in an N-channel MOSFET and its
temperature dependence. The experiment confirmed the theoretical expecta-
tions and the data analysis demonstrated how temperature affects the mobility
of charge carriers in the device.