CHAPTER-2 ( BIOPOLAR TRANSISTOR )

EXERCISE QUESTIONS

Q1. Show the biasing arrangement for a PNP transistor in CB

configuration so that it works in active region ?

Ans. In a PNP transistor, the common-base (CB) configuration is one of

the three basic transistor amplifier configurations. The common-base
configuration is not as common as the common-emitter or common-
collector configurations, but it is still used in certain applications.

For a PNP transistor to operate in the active region in a common-base

configuration, you need to bias the transistor properly. The biasing
arrangement typically involves applying a voltage between the base and
emitter terminals and ensuring that the collector-base junction is
reverse-biased.

Here's a simplified biasing arrangement for a PNP transistor in common-

base configuration:

1.Connect the emitter terminal to the positive supply voltage (Vcc).

2.Connect the base terminal through a resistor (Rb) to a point at a

lower potential than the emitter, typically ground (0V).

3.Connect the collector terminal through a load resistor (Rc) to the

positive supply voltage (Vcc).

This arrangement ensures that the emitter-base junction is forward-

biased, allowing a small base current (IB) to flow. The collector-base
junction is reverse-biased, allowing a larger collector current (IC) to
flow. The voltage between the collector and emitter terminals (VCE) is
typically greater than zero but less than the supply voltage (Vcc).

Q2. Explain the function of the emitter , base and collector in the
operation of a junction transistor ?

Ans. A junction transistor, whether it's a bipolar junction transistor (BJT)

like the PNP or NPN types, consists of three layers of semiconductor
material. These layers are referred to as the emitter, base, and collector.
The operation of a junction transistor is based on the interaction
between these layers, and each layer has a specific function:

Emitter (E):

The emitter is heavily doped with impurities, either P-type in a NPN

transistor or N-type in a PNP transistor.

Its primary function is to emit or inject tuition carriers (electrons in

NPN, holes in PNP) into the proximal wiring region.

The emitter is the source of the majority tuition carriers in the

transistor.

Base (B):

The wiring is lightly doped and is relatively thin compared to the emitter
and collector.

Its main function is to tenancy the spritz of tuition carriers from the
emitter to the collector.

The wiring is very important in determining the transistor's unfurling

characteristics. The base-emitter junction is typically forward-biased.

Collector (C):
The collector is moderately doped and larger in size compared to the
emitter and base.

Its primary function is to collect the tuition carriers (electrons in NPN,

holes in PNP) that have passed through the wiring region.

The collector-base junction is usually reverse-biased.

The operation of a junction transistor involves the pursuit steps:

Forward Biasing of the Emitter-Base Junction:

A small forward voltage is unromantic to the emitter-base junction. In

an NPN transistor, the emitter is increasingly positive than the base, and
in a PNP transistor, the emitter is increasingly negative than the base.

This forward biasing allows the injection of tuition carriers (electrons or

holes) from the emitter into the base.

Controlled Diffusion in the Base:

The injected tuition carriers longish through the thin wiring region.

Collector-Base Junction Reverse Biasing:

The collector-base junction is reverse-biased, creating a upper electric

field that sweeps the majority tuition carriers (electrons or holes) from
the wiring towards the collector.

Collection of Tuition Carriers in the Collector:

The majority tuition carriers reaching the collector contribute to the

collector current, which is the main output current of the transistor.

Q3. Explain why CE configuration is most popular in amplifier circuits ?

Ans. The Common Emitter (CE) configuration is the most popular and
widely used configuration in amplifier circuits for several reasons:

High Voltage Gain:

The CE configuration provides a relatively high voltage gain. The voltage

gain in this configuration is the ratio of the change in output voltage to
the change in input voltage. The CE configuration typically offers higher
voltage gain compared to the Common Base (CB) and Common
Collector (CC) configurations.

Medium Current Gain:

While the CE configuration does not provide the highest current gain
among transistor amplifier configurations (Common Collector usually
has higher current gain), it still offers a reasonable current gain. The
combination of decent voltage and current gains makes it suitable for
many practical applications.

Inverted Output:

The output voltage is inverted concerning the input voltage in the CE

configuration. This inversion is often desirable in amplifier applications,
as it allows for phase shifts that can be compensated in later stages of
the circuit.

High Input Impedance, Moderate Output Impedance:

The CE configuration typically exhibits high input impedance, making it

less sensitive to variations in the input signal source impedance. At the
same time, it offers moderate output impedance, allowing for easier
matching with the subsequent stages of the amplifier or the load.
High Power Gain:

The CE configuration provides a relatively high power gain, which is

crucial for amplifying the power of signals in applications such as audio
amplifiers.

Wider Frequency Response:

The CE configuration generally offers a wider frequency response

compared to other configurations. This makes it suitable for
applications where a broad range of frequencies needs to be amplified.

Ease of Biasing:

Biasing the CE configuration is relatively straightforward, and it is less

sensitive to variations in transistor parameters and temperature
changes. This simplifies the design and stabilization of the amplifier
circuit.

Versatility:

The CE configuration is versatile and can be used in various amplifier

applications, including voltage amplifiers, power amplifiers, and other
signal processing circuits.