Answer for smktk trial exam (physics p2) 2019

SECTION B

16. (a) CR = 42 1 (b) QO = CVO 1

1200 X 10-6 X R = 42 = 1200 X 10-6 X 15
R = 35 k ꭥ 1 = 18 m C 1

(c) Q = QO(1 – e –t/CR) 1 2.00 1

17.(a) Current in wire AB, I =
(5.0+1.5)
0.25 QO = QO(1 – e –t/42)
e –t/42 = 0.75 1 2.00
t = 12.1 s E.m.f, E = VAJ =( )(0.75 𝑥 5.0) 1
6.5
1 = 1.15V 1

𝑉 64.2 𝑅
(b) = = (c) 2.00 α 100.0cm
𝐸 75.0 𝑅+𝑟
1
𝑉 64.2 64.2
8 + r = 8(
75.0
) = , V=( )(1.15) Vα I
𝐸 75.0 75.0
64.2 1 64.2 1.15 1
Balanced length, l = ( )( )(100.0 )
75.0 2.00
r = 1.35 ꭥ 1 = 49.2 cm 1

𝑅𝐴
18. (a) Resistivity, 𝜌= , R = Resistance of a 1 (b) From F = ma 1
𝑙 𝐹 𝑒𝐸
wire of that a= = 1
𝑚 𝑚
material
A = Cross-sectional 𝑒𝐸 1
And mean final velocity, v = 0 + 𝑡
𝑚
Area of the wire J = nve
l = length of the wire 1
𝑒𝐸 𝑛𝑒 2 𝑡
= n( 𝑡) 𝑒 =( )𝐸
𝑚 𝑚
1 1 J = 𝜎𝐸
Conductivity, 𝜎 =
𝜌 𝑛𝑒 2 𝑡
Hence, 𝜎 = 1
𝑚

(c) In copper wire, when temperature increases, Silicon is semiconductor.

lattice ions vibrate with bigger amplitude. - When the temperature increases,
- The mean free path of free electron and 1 more holes and free electrons are
ions decreases produced, thus the number of charge 1
- Hence the mean time interval between 1 carriers increases.
𝑛𝑒 2 𝑡 𝑛𝑒 2 𝑡 1
the collision decreases, 𝜎 = , -hence , 𝜎 = , n increases,
𝑚 1 𝑚
Conductivity decreases as t decreases. 𝜎 increases

(d) At high temp, the resistance of metal At high temperature, the resistance of
1 1
conductors increases, hence the resistivity of s/conductor, hence the resistivity of
metal conductor increas as temperature rises. semiconductor decreases

At low temperature of near- absolute

1
zero, the resistivity of certain materials
become zero. Superconductors have
zero resistivity at very low
temperature.
19. (a) (b) (i) the charge carriers in semi- 1
conductors are free electrons.
T 2A T (ii)

F 3
-FM
mg -VH
T = ke -+,-
= 50 (0.02)
= 1.0 N 1 (iii) Hall effect : Phenomenon when a
current-carrying conductor is placed in
For the wire to be in equilibrium, magnetic field, the charge carriers
2T = F + mg 1 experience a magnetic force.
= Bil + mg 1 The magnetic force will push/deflects 1
2(1) = B (2)(0.1) + (10 X 10-3) (9.81) the charge carriers to one side of the
B = 9.51 T 1 conductor and there will be a
transverse potential difference. Hall 1
voltage is produced when the electric
force and the magnetic force acting on
the charge carriers are equal.

(iv) When FE = FB , Hall voltage, VH occurs. 𝐵𝐼

(v) 𝑛 =
𝑞𝑡𝑉𝐻
e E = ev B 1
𝑉𝐻 𝐼 𝐵𝐼
= 𝐵, = 1 (0.8)(50 𝑋 10−3 )
𝑑 𝑛𝐴𝑒 𝑛𝑒𝐴 =
(1.6 𝑋 10−19 )(4 𝑋 10−3 )(25 𝑋 10−3 ) 1
𝐵𝐼𝑑 1
VH =
𝑛𝑒𝐴 =2.5 X 1021 m-3 1

20. (a)(i) Reactance is the opposition to the flow 1 (b)(i) V = VO sin wt 1

of alternating current by capacitance or 𝑉 𝑉 sin 𝑤𝑡 1
I= = 𝑜
𝑅 𝑅
inductance
(ii) Impedance is the opposition to the flow 𝑉𝑜 sin 𝑤𝑡
of alternating current by reactance and 1 (ii) p = VI = (VO sin wt)( ) 1
𝑅
𝑉𝑜2
resistance = 2
sin wt
𝑅
𝑉𝑜2 <𝑠𝑖𝑛2 𝑤𝑡>
<𝑃> =
𝑅
𝑉2 1
= 𝑜
2𝑅

(c)(i) VR
(ii) Z = √𝑋𝐶2 + 𝑅 2 1
2
1
1 2
= √( ) + 𝑅2
𝑤𝐶
 (ii)
𝑉𝑜 240
(d) (i) XL = = 1
𝐼𝑜 0.48
1
= 500 ꭥ
1

(iii) Since the voltage phasor leads the 1

current phasor by π/2 rad, the
component is an inductor
Question Answer Mark Total
SECTION A
1 A 1
2 A 1
𝑞1 −2.1 × 10−6
𝑉1 = =
4𝜋𝜀0 𝑟1 4𝜋(8.85 × 10−12 )(0.5)
= −3.777 × 104 𝑉

𝑞2 1.5 × 10−6
𝑉2 = =
4𝜋𝜀0 𝑟2 4𝜋(8.85 × 10−12 )(0.3)
= 4.496 × 104 𝑉

Electric potential at X,
𝑉𝑥 = 𝑉1 + 𝑉2
= (−3.777 + 4.496) × 104 = 7.19 × 103 𝑉
3 A 1
1
𝑈 = 𝐶𝑉 2
2
𝜀0 𝐴 (8.85 × 10−12 )(0.5)
𝐶= = = 4.917 × 10−10 𝐹
𝑑 9 × 10−3
𝑉 = 𝐸𝑑 = (3 × 106 )(9 × 10−3 ) = 2.70 × 104 𝑉

1
∴ 𝑈 = (4.917 × 10−10 )(2.7 × 104 )2 = 0.179𝐽
2
4 C 1
𝑡
𝑄= 𝑄0 𝑒 −𝐶𝑅
76
(5 × 10−4 )𝑄0 = 𝑄0 𝑒 −𝐶𝑅
1 76
= 𝑒 𝐶𝑅
5 × 10−4
76 1
= ln( )
𝐶𝑅 5 × 10−4
𝐶𝑅 = 10 𝑠
5 A 1
𝐼 = 𝑛𝐴𝑣𝑒
𝐼
𝑛=
𝑣𝐴𝑒

=2.5 x 1023

6 C 1
Using Kirchoff’s second law,
Σ𝐸 = Σ𝐼𝑅
6 − 1.5 = 9𝐼 + 3𝐼 + 3𝐼
𝐼 = 0.3𝐴
𝑉𝑃 − 3(0.3) − 1.5 − 3(0.3) = 𝑉𝑄
𝑉𝑃 − 𝑉𝑄 = 3.3𝑉
7 A 1
𝐸 = 𝐼(𝑅 + 𝑟)
12 = 𝐼(2 + 0.05)
𝐼 = 5.8537 𝐴
 𝑉 = 𝐼𝑅 = (5.8537)(2) = 11.7𝑉
𝑃 = 𝐼 2 𝑅 = (5.8537)2 (0.05) = 1.71 𝑊
8 B 1
The potential difference across the resistor = the
potential difference across the milliammeter
(𝐼 − 0.002) × 100 = 0.002 × 55
𝐼 = 3.1 𝑚𝐴
9 D 1
𝜇0 𝑁𝐼 (4𝜋 × 10−7 )(250)(20 × 10−3 )
𝐵= =
2𝑟 2(40 × 10−3 )
= 7.85 × 10−5 𝑇
10 C 1
𝐹𝑞 = 𝐹𝑚
𝑞𝐸 = 𝐵𝑞𝑣
𝐸 4.15 × 106
𝑣= = = 5.32 × 107 𝑚𝑠 −1
𝐵 0.078
11 C 1
𝜀 = (2.43 × 10−3 )(14) = 3.402 × 10−2 𝑉
12 A 1
𝑑Φ 𝑑
𝜀=− = − (𝐵𝐴)
𝑑𝑡 𝑑𝑡
𝑑𝐵
=𝐴 = 0.16𝑉
𝑑𝑡
𝐼(4) = 0.16
𝐼 = 40 𝑚𝐴
13 B 1
14 C 1
15 A 1 15