NTHU PME2431 Manufacturing Processes Fall 2023 (100 points)

HW 7 IC, MEMS, and PCB Manufacturing

1. (50 Points) In a semiconductor manufacturing process, hydrogen fluoride (HF) is
used to etch a silicon dioxide layer for 2 minutes. The HF concentration used for
this process is 10 mole/L. The silicon dioxide layer has a molecular weight of 60
g/mole and a density of 2.6x10-3 g/mm3 . The diffusion layer thickness is 0.2
mm. The diffusion coefficient is 0.006 mm2 /s. Estimate the depth resulting from
the etching process, assuming there is no undercut

2.
A How is the SiC wafer sliced from the ingot using laser?
1. Material Preparation:
• The silicon carbide (SiC) ingot is prepared, and its surface may be
conditioned to enhance the efficiency of the laser cutting process.
2. Laser System Setup:
• A high-power laser system is used, often a pulsed laser, with parameters
such as wavelength and intensity optimized for efficient energy absorption
by SiC.
3. Laser Absorption and Melting:
• The laser beam is directed onto the surface of the SiC ingot. The specific
wavelength of the laser is chosen to match the absorption characteristics of
SiC, ensuring efficient energy transfer.
• As the laser energy is absorbed by the material, it induces localized heating,
leading to melting or vaporization of the SiC.
4. Material Removal:
• Once the SiC is in a molten or vaporized state, material is removed from the
ingot surface. This could be achieved through mechanisms such as
vaporization, ablation, or a combination of both.
• The removal of material creates a cut or groove in the ingot, and the process
is repeated to continue the slicing.
 5. Control and Precision:
• Precision is crucial in ingot slicing, and the laser system is controlled with
high accuracy to achieve the desired thickness of each wafer.
• The process may involve the use of advanced control systems, sensors, and
feedback mechanisms to ensure uniformity and quality.
6. Cooling and Solidification:
• After each laser pass, the sliced section of the ingot undergoes cooling and
solidification, preventing excessive heat buildup and potential damage to
the material.

b) Draw the configuration on how the SiC wafer and ingot surface grinding operations
were performed after the laser slicing of wafer? Explain why the ingot grinding is
required?
1.

SiC Wafer and Ingot Surface Grinding Operations:

1. Laser Slicing:
• After laser slicing, the SiC ingot is transformed into individual wafers.
2. Initial Surface Condition:
• The laser slicing process may leave the wafer surfaces with roughness
and irregularities.
3. SiC Wafer Surface Grinding:
• The first step involves grinding the surfaces of the individual SiC
wafers. This is done to achieve a smoother surface finish and remove
any defects or rough areas created during the laser slicing process.
• Precision grinding machines equipped with abrasive wheels are
commonly used for this purpose.
4. Quality Control:
• Throughout the grinding process, quality control measures may be
 implemented to ensure the wafers meet specified thickness
tolerances, flatness requirements, and surface finish standards.
5. Ingot Surface Grinding:
• In parallel or subsequent to wafer grinding, the remaining SiC ingot
may undergo surface grinding as well.
• This is done to prepare the ingot for subsequent slicing operations or
to meet specific dimensional and surface quality requirements.
6. Final Inspection:
• After both wafer and ingot surface grinding, a final inspection is
typically conducted to ensure that the wafers and ingot meet the
desired specifications for use in semiconductor applications.

2.
1. Uniform Thickness:
• The laser slicing process may introduce variations in the thickness of
individual wafers. Grinding the ingot surface helps achieve a uniform
thickness for subsequent slicing operations.
2. Surface Quality:
• The laser slicing process can leave the ingot surface with irregularities
and defects. Grinding the ingot surface improves the overall surface
quality, ensuring that subsequent wafers sliced from the ingot will
have a smoother surface.
3. Dimensional Control:
• Grinding the ingot allows for precise control over its dimensions. This
is critical for ensuring that the wafers meet the required thickness and
dimensional specifications for semiconductor applications.
4. Minimizing Defects:
• Grinding helps minimize defects, such as microcracks or surface
damage, that may be present in the ingot after laser slicing. This is
important for maintaining the structural integrity of the material.
5. Improved Surface Finish:
• Grinding provides a more refined and polished surface finish on both
the ingot and the wafers, contributing to the overall quality and
performance of the semiconductor devices manufactured from them.
.