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SEVERAL SPUTTERING PARAMETERS AFFECTING THIN FILM DEPOSITION

Article in Journal of Applied Chemical Science International · April 2022

DOI: 10.56557/jacsi/2022/v13i37590

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Journal of Applied Chemical Science International
13(3): 41-49, 2022
ISSN: 2395-3705 (P), ISSN: 2395-3713 (O)

SEVERAL SPUTTERING PARAMETERS AFFECTING THIN

FILM DEPOSITION

HAROON EJAZ a*, SHABBIR HUSSAIN a, MANZAR ZAHRA a,

QAISAR MEHMOOD SAHARAN a AND SALMAN ASHIQ a
a
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.

AUTHORS’ CONTRIBUTIONS
This work was carried out in collaboration among all authors. All authors read and approved the final
manuscript.

Received: 03 February 2022

Accepted: 08 April 2022
Published: 11 April 2022 Original Research Article
__________________________________________________________________________________

ABSTRACT

Sputtering is a technique used for thin film deposition on different substrates for centuries. In this technique, the
source atoms or electrons are bombarded on the target material that sputters target metal atoms. The emitted
target atoms are deposited on the substrate in the form of thin films. Several sputtering parameters control the
rate at which films are deposited. These sputtering parameters include voltage applied, sputter yield, type of the
gas used, type of the target material used, type of the substrate on which the thin films are to be deposited, the
working pressure of the system, power, temperature of the system and substrate, angle of incidence of
bombardment and distance between target and substrate. These parameters are essential to have thin films of
desired thickness and properties. These properties include electrical properties, thermal properties, optical
properties and chemical properties as well.

Keywords: Sputtering; deposition rate; sputter yield; sputtering power; working pressure; sputtering
temperature.
1. INTRODUCTION
'To sputter' is derived from the Latin word "sputare",
whose meaning is to secrete saliva from the nose [1,
2]. Sputtering can be defined as, "The emission of
atoms from the surface of the target material, on the
bombardment of atomic particles of suitable energy"
[1, 3, 4]. Atoms that are bombarded are ions generated
from gas at low pressure using an electrical discharge.
This technique is used to deposit thin films on a
substrate's surface [4, 5].
Thin films have a rich history from nearly 5000 BC.
Gold thin films were found in Greece and Anatolia,
which were approximately 4000-5000 years old.
Latest sputtering techniques have been adopted since
the 18th century [6]. Thin-film formations have wide
_____________________________________________________________________________________________________
applications in microelectronic component
fabrication, optical coatings, and decorative parts[4].
The applications of thin films vary with changes in
their thickness [7-9]. Different films are used in
different applications. It is vital to dictate film
deposition and film thickness to have the required
applications in the sputtering process. For this
purpose, different techniques are used to control these
parameters. [1, 8, 10-16].
This study's objective is to take account of parameters
that control thin films' deposition rate in the process
of sputtering. New horizons must be unlocked in the
synthesis of nanoparticles by monitoring these
parameters. Therefore, this study is essential and
crucial.

*Corresponding author: Email: haroonejaz4114@gmail.com;


2. FILM DEPOSITION BY SPUTTERING
Films are deposited on the substrate by the process of
Sputtering [17, 18]. Sputtering occurs at the solid
(target) surface when exposed to the ionic beam [19].
On the target's surface, target surface atomic particles
are ejected, transforming the material into the gas like
phase. [19, 20]. On the substrate's surface, a thin film
is formed after the sputtered atoms' condensation
process [21]. The characteristics of the deposited thin
film-like structure, conductivity and adhesion are
influenced by the condensation process and nucleation
and growth processes [22]. The properties like film
thickness depending upon the source used for
sputtering [23]. The process of film deposition can be
carried out in many ways, based on the source used.
Normally, there are following methods of sputtering
[24].
a) D.C. Sputtering
b) R.F. Sputtering
c) Magnetron Sputtering [25]
2.1 Process of Film Deposition
The necessary process of film deposition by
sputtering includes the following steps:
The substrate on which the film is to be deposited is
placed in a chamber with the source material, called
target [26]. The chamber is evacuated to the
programmed process pressure in the high vacuum
range [20]. An inert gas like Argon, Xenon or
Krypton is introduced [27]. A plasma is produced
using an R.F., DC or Magnetic power source. This
roots some of the gas molecules to lose electrons,
becoming positive ions [28, 29]. The ions gather
speed towards the target, which is at the ground or
Fig. 1. Film Deposition by Sputtering [31]
42
Ejaz et al.; JACSI, 13(3): 41-49, 2022
negative potential [27]. The high-energy ions
bombard the target causing target atoms to break off
as a vapour [30]. The vapour expands and condenses
on the surface of the substrate [24].
2.2 Sputtering Parameters Controlling
Deposition Rate
Several sputtering parameters control the deposition
rate and thickness of thin films in the process of
sputtering. The deposition is maintained by handling
these parameters, which further dictates the film
thickness and different properties of the thin film [1,
7-9, 12, 32]. As described earlier, film thickness
directly relates to the quality of the film produced and
the applications of the product. Following are some
parameters that control the film thickness.
2.2.1 Voltage
The thickness of film and deposition rate in the
sputtering process can be varied with varying applied
voltage [33, 34]. The maximum energy possessed by
the ejected atoms from the target is controlled by
applied voltage [35]. The applied voltage controls the
K.E. of the ions, bombarded on the target's surface
[36]. Greater the voltage of cathode, more tremendous
will be ions' energy, resulting in a more significant
number of atoms sputtered from target [12].
The deposition will be greater once the number of
sputtered atoms are increased [37]. The film thickness
will be increased in case of increasing voltage. The
sputtering requires a minimum voltage for the
sputtering process called 'Threshold Voltage' [38].
Below this voltage, ions do not have sufficient energy
to daze the target's binding energy atoms. Its value is
in between 0eV to 100eV [11].

Fig. 2. Relationship of cathode voltage and deposition rate
The normal range of voltage is from 100V to 1000V
to have suitable film thickness [1].
2.2.2 Sputter yield
"Sputter Yield" can be defined as, "It is the number
of target atoms which are sputtered divided by the
number of incidents ions from the source” [1].
The sputter yield is proportional to the applied
voltage, which means an increase in the applied
voltage will increase sputter yield. However, after a
limit, the sputtering yield becomes constant and
decreases with increasing voltage [32]. It also
depends on the masses of incident ions and target
elements and atoms' binding energy with target
surface [39].
Sputter yield is given by;
sputtered atoms Mm E m
Y 
 M  m UM
2
bombing ions
M : mass of target atom
m : mass of bombing ion
E m : kinetic energy of bombing ion
U M : Bonding energy of target metal
 : depends on striking /incident angle
The sputtering yield directly relates to the deposition
rate, which means an increase in sputter yield
43
Ejaz et al.; JACSI, 13(3): 41-49, 2022
increases the deposition rate. When the rate of
deposition is increased, the film thickness will also be
increased. Table 1 shows some results about film
deposition of Cu atoms studied the relationship of
sputter yield and film thickness. They showed an
increase in sputter yield, which increases the
deposition rate, which increases film thickness [32].
2.2.3 Type of gas used in process
The thickness of deposited film and deposition rate in
sputtering also depends upon the type of gas used in
the sputtering method. [40, 41] In sputtering, an inert
gas is used to avoid any interferences. Xenon and
Krypton have greater sputter yield, but they are
expensive as compared to Argon. Therefore, Argon is
majorly used in the process of sputtering [1]. In some
of the sputtering techniques, nitrogen gas can also be
used for this process [40].
2.2.4 Type of target material
The target material should be of higher atomic masses
[42]. Heavy metals are usually used for this purpose
to have greater sputter yield and greater film thickness
[43]. Periodic behaviour is observed when a graph
between sputter yield and target atomic number is
plotted [44]. There is a relation between this typical
behaviour and the binding energy of the target
material's surface [45]. The sputter yields have an
increased value between Ti and Cu and then decrease
in transition metals [46]. The Sputter yields rise
between Zr and Ag again before going down to the
minimum value of Hf. The Sputter Yields has an
increased value also to another maximum value at Au.
 Ejaz et al.; JACSI, 13(3): 41-49, 2022

Table 1. Sputter yield and thin film thickness [32]

Cu Film (Sputtering Data)

16µg/cm2 film 63 µg/cm2 film
o
Film Thickness [A ] 179 200 705 800
Cu Sputter Yield 2.6 3.2 3.1 3.5

So it is evident that Au, Cu, and Ag are those
transition metals that can sputter most willingly [44].
The alignment and crystal structure of the target
atoms is related to the incident sputter ions. It can also
change the sputter yield and the angular dispersal of
sputtered atoms [1].
2.2.5 Type of substrate
The type of substrate also has effects on the film
deposition and its thickness [47]. If the substrate has
good adhesion with the deposited film's atoms, the
suitable range thickness is obtained [12, 47]. The
adhesion property of thin films increases with an
increase in the substrate surface's roughness [48].
with the gas atom, and this average distance is called
Mean Free Path (λ) [49]. The mean free path (λ) is
inversely proportional to the working gas pressure
[50]. When the gas pressure increases, the mean free
path will be short, and sputtered atoms will have more
collision before their deposition at substrate [13, 16,
51]. More collisions will result in a low deposition
rate, and hence the thickness of the film will be
decreased [15]. Therefore, the Sputtering process is
done at low pressures ranging from 10 -5 to 10 torr [12,
8].
Table 2 shows that decreasing gas pressure from 13
torrs to 3 torr increases film thickness to 900 nm from
100 nm [12].

2.2.6 Working pressure The tungsten films prepared at higher pressure show
low crystallinity and thinner films. At low pressures,
The working pressure of gas dictated the average tungsten films have the best electrical and elastic
distance between atoms sputtered before interacting characteristics [8].

Table 2. Pressure and thickness of thin film[12]

Sample Layer of Mo Pressure in mTorr Thickness in nm

First Layer No. 1 (13) (100)
Layer No. 2 (3) (900)

Fig. 3. Relationship of working pressure and deposition rate

44

2.2.7 Sputtering power
Deposition of thin films and film thickness in the
deposition process also depends upon the D.C. or R.F.
power [14, 16, 34]. An increase in D.C. or R.F. Power
results in the Ar ions to bombard the target with high
energy, increasing the sputtering of atoms [52]. The
deposition rate also increases with increased power,
which then raised the thickness of the film. It is
evident from research published by Chinese
researchers, who studied the film deposition of Mo
atoms, that increasing power in the range of 200-400
W increases the film thickness [12].
2.2.8 Temperature
The temperature of the system affects the film
thickness as well [34, 53]. Increasing temperature will
give higher mobility to the atoms on the surface [54].
This higher mobility will lead to larger grain size and
smoother film. The greater the grain size, the greater
will be the thickness of the film [34].
Due to this reason, the substrate is typically placed on
a heating stage to have greater temperature [11].
However, sputtering itself produces heating due to
collisions of atoms with the surface [37]. Excessive
heating can damage the deposited film.[55] Therefore,
cooling has to be done in case of extreme heat [1, 55].
Fig. 4. Relationship of sputtering power and deposition rate
Table 3. Sputtering parameters & deposition level [12]
Substrate Soda-lime glass
Target Molybdenum
Gas Argon
Level of deposition Parameters of sputtering
State A Working Pressure in m Torr
State B Dc Power in Watt
State C Temperature of Substrate in oC)
45
Ejaz et al.; JACSI, 13(3): 41-49, 2022
Level A has more excellent deposition rates and
thickness of the film than Level B and Level C. Level
A> Level B >Level C [8, 10, 13, 15, 16, 51,
56].
2.2.9 Angle of incidence
The sputter yield also depends on Ar atoms' angle to
the target metal's surface [57]. Sputter yield increases
with an increase in the incidence angle [58]. The
sputter yield reaches a maximum between 60o to 80o
[1]. The sputter yield is maximum at these angles, so
the deposition rate will also be maximum, and a
thicker film will be obtained [59]. Further increase in
the angle will rapidly decrease the film's sputter yield
and thickness [1].
Some crystals show anisotropic behaviour. Therefore,
their anisotropy must be considered before setting the
incidence angle [60].
2.2.10 Distance between substrate and target
The distance between the target and substrate has a
significant influence on the film thickness [56]. The
distance between target and substrate is decreased,
which results in the increased grain size of the
nanoparticles [61]. This change will increase the
thickness of the film [62]. P. Asanithi et al., have
Sample 1 Sample 2 Sample 3
3 8 13
200 300 400
25 100 200
 Ejaz et al.; JACSI, 13(3): 41-49, 2022

Fig. 5. Nanoparticles deposited on Si at various target substrate distances: a) 10 cm, b) 15 cm and c) 20

cm AFM images of Ag, deposited with the substandard at various target substrate distances. (d) the bare
Si substrate AFM height photo (250 nm × 250 nm)[63]

demonstrated a greater thickness of Ag nanoparticles
when the target and substrate's distance is reduced.
With high uniformity at 20 cm between the target and
the substrate, silver particles' smallest grain size, i.e.
3.8 ± 0.7 nm, was observed [63].
3. CONCLUSION
Sputtering is an efficient technique for the synthesis
and deposition of various thin films on different
substrates. During the process of different sputtering
parameters are controlled to have an optimum rate of
deposition and thin films of required thickness. The
optimum thickness will lead to the required specific
properties. After a long chain of experimentation and
research, scientists are now fully aware of the
optimum conditions of sputtering parameters. These
parameters' control helps industries and labs have thin
films' required properties like electrical properties and
optical properties. Sputtering can be modified to
increase its applications in fabrics, bacterial
resistance, hydrophobic and hydrophilic properties in
the coming years.
COMPETING INTERESTS
Authors have declared that no competing interests
exist.
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