IS A DEVICE THAT IS FULLY- CONTROLLABLE THYRISTOR, WHEREBY A SMALL GATE SIGNAL COULD BOTH TRIGGER THE THYRISTOR AND FORCE IT TO TURN OFF.
IT USES A PAIR OF MOSFETS
CONNECTED TO A COMMON GATE TERMINAL, ONE TO TRIGGER THE THYRISTOR AND THE OTHER TO “UNTRIGGER” IT. MOS-GATED THYRISTOR EQUIVALENT CIRCUIT MOS CONTROLLED THYRISTOR
MOS-CONTROLLED THYRISTOR (MCT) IS
ANOTHER HYBRID POWER SEMICONDUCTOR DEVICE WHICH COMBINES THE ATTRIBUTES OF THE MOSFET AND THYRISTOR. INVENTED BY V.A.K TEMPLE IN 1984, AND WAS PRINCIPALLY SIMILAR TO THE EARLIER INSULATED-GATE BIPOLAR TRANSISTOR. THIS IS THE BASIC STRUCTURE OF AN MCT. IT HAS A PUNCH-THROUGH STRUCTURE AND COMBINES THE FEATURES OF A REGENERATIVE THYRISTOR AND A MOS-GATE STRUCTURE.
THE STRUCTURE IS SUCH THAT THE
MOSFETS ARE ARRANGED ON TOP OF AN SCR. THE CIRCUIT CONSISTS OF TWO MOSFET TRANSISTORS WHICH ARE N-CHANNEL AND THE OTHER ONE IS A P-CHANNEL. THE P- CHANNEL IS USED FOR THE SWITCH ON THE ON FET AND N-CHANNEL IS USED FOR THE SWITCH OFF THE OFF FET.
THE CIRCUIT CONSISTS OF TWO
TRANSISTORS WHICH ARE N-P-N AND P-N- P TRANSISTORS. EQUIVALENT CIRCUIT DIAGRAM OF MOS CONTROLLED THYRISTOR MOS CONTROL THYRISTOR ARE USED IN THE INDUCTION HEATING. A MOS CONTROLLED THYRISTOR USES TWO IT IS ALSO USED IN THE MOSFETS TO EXERT FULL CONVERTERS LIKE DC TO DC CONTROL OVER THE CONVERTER. THYRISTOR. Positive Gate Voltage - trigger the THEY ARE ALSO USED AS device to turn on the upper MOSFET FORCED COMMITTED POWER SWITCHES. Negative Gate Voltage - forces used to turn off the device. It can be turned on or off by a negative or positive gate voltage
. It has high-speed switching capabilities
Low conduction losses.
It has a higher current
density when compared to MOSFET. 1) LOW FORWARD VOLTAGE DROP DURING CONDUCTION 2) FAST TURN-ON AND TURN-OFF TIMES 3) LOW SWITCHING LOSSES 4) LOW REVERSE VOLTAGE BLOCKING CAPABILITY 5) HIGH GATE INPUT IMPEDANCE
1) THE REVERSE BLOCKING CAPACITY OF MCT IS LOW
2. REQUIRES VERY HIGH NEGATIVE CURRENT TO TURN IT OFF