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Modular Multilevel Converter for Variable Speed Operation of


Pumped Storage Hydropower Plants
Raghbendra Tiwari, Roy Nilsen, Arne Nysveen

Norwegian University of Science and Technology (NTNU), Norway

Corresponding author: Raghbendra Tiwari, raghbendra.tiwari@ntnu.no

Abstract
This paper presents the Modular Multilevel Converter topology as a potential alternative for the full-size
converter fed synchronous machines in range of 100 MVA in a pumped storage power plants. The suitability
of the converter has been analyzed based on the torque it can provide at standstill to drive the turbine
in pump mode with water in the turbine casing. The basis of analysis is the conduction and switching
losses incurred in the semiconductor devices at standstill compared to the rated operation to determine
the possible output current from the converter, which consequently transforms to torque availability. The
analysis also takes into account the ripple in the submodule capacitor voltages occurring at low or zero
frequency operation.

1 Introduction match the stator power rating and the transformer


at both ends of the converter are installed to match
Pumped storage power plants are normally realized the machine and grid transformer voltages.
with fixed speed synchronous machine as in a
Three-level voltage source converter and Modular
conventional hydropower plant with a reversible
Multilevel Converter (MMC) topologies are
pump turbine (RPT). Such plants are only used for
suggested as possible solutions for this application
pumping with fixed power for a long term operation,
[4]. Due to the modular structure of MMC, any
e.g. weekly or seasonal in some cases. To achieve
output voltage to meet the stator voltage rating can
the dynamic regulation of power in pump mode
be realized by connecting several submodules in
and to run the RPT at optimal efficiency, variable
series. But, it is a well known problem of MMC
speed operation of pumped storage plants has
at very low and zero frequency operation that
been realized using doubly fed induction machines
the arm currents become close to dc current
(DFIM). A list of large scale plants around the world
and monotonically either charges or discharges
with DFIM technology is listed in [1]. The DFIM
the submodule capacitor. In [5] and [6], the
technology takes several minutes (5–10 minutes)
control strategy for low frequency and standstill
for start up of the system as the water inside the
operation of MMC have been proposed such that
turbine casing needs to be compressed below the
the amplitude of submodule capacitor voltage
turbine level [2]. Considering the future growth of
remains within a pre-specified limit of ±10 − 15%.
renewable energy sources, very fast start up of the
In [6], it has been shown that 40% of rated torque
plant in pump mode or a transition from generating
can be achieved from a PWM modulated MMC at
to pumping mode or vice versa is imminent. Such
standstill without exceeding the ripple in submodule
dynamic feature can only be achieved by installation
capacitor voltage more than 20%.
of a full-size converter between the stator of
the machine and the grid. Such converter fed In this paper, a full size modular multilevel converter
synchronous machine (CFSM) technology exists for a 100 MVA, 13–15 kV synchronous machine in
at Grimsel-2 plant in Switzerland where one of the a pumped storage power plant is analyzed based
100 MW units with synchronous machine has been on its starting torque requirement in pump mode
supplied with a full-size converter [3]. Two active and in case of fast transition from generating mode
neutral point clamped converter are employed to to pump mode. Analytical loss expressions have

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been used to determine the losses in the devices output current (io ) and the dc-link currrent (idc ) at
at rated speed and at standstill. The starting torque steady state operation are as:
capability has been determined based on the total
idc SM 1
loss at low frequency or standstill operation which T1
must not exceed that at rated operation. In addition, SM 2
D1
the capacitor voltage ripple must also be within a
SM N uc
limit of 20% as suggested in [5] and [6]. T2
L usm D2
iau
Udc R
2 Application requirements and ia

Converter Topology
R ial

2.1 Torque–Speed Characteristics of L


Reversible Pump Turbine SM 1

SM 2
The design of the RPTs are normally optimized for
pump operation and therefore, are more efficient SM N
in that region. From a typical torque speed
characteristics presented Fig. 1, the torque required Uan Ubn Ucn

to start the RPT in pump mode from standstill Fig. 2: Schematic diagram of a Modular Multilevel
is about 12% with minimum guide vane opening Converter with half-bridge sub-module
configuration. In this figure, ”SM” stands
(α = 1◦ ), i.e. the converter needs to supply dc
for submodule.
current around 12% of its rated current to start the
RPT in pump mode when the turbine is submerged 1
in the water. The torque required for fast transition iu = io + Iz,dc + iz,ac (1)
2
from generating to pumping mode varies from 40
– 120% depending upon the guide vanes opening. 1
il = − io + Iz,dc + iz,ac (2)
Therefore, the mode reversal from generation to 2
pump to adapt fast variation of renewable sources where,
can be demanding for many converter topologies. io = iu − il = Iˆo sin(ωt + ϕ) (3)

1
icirc = (iu + il ) = Iz,dc + iz,ac (4)
2
M Iˆo (5)
Iz,dc =
cos ϕ
4
Here, Iˆo is the peak of output current, M is
the peak of modulation index and cos ϕ is the
power factor. The circulating current (icirc )
consists of dc component (Iz,dc ) and ac harmonics
component (iz,ac ) which predominantly consists of
Fig. 1: Torque speed characteristics of a reversible 2nd harmonics of the output current in an open
pump turbine at different guide vane openings
loop phase shifted PWM modulated MMC. There
(α). The speed is positive in generating
mode and negative in pumping mode. The
exists several control methods to eliminate these
shaded region shows the rated operating region. current harmonics, known as circulating current
Courtesy: Water Power Laboratory, NTNU, suppression (CCS) control [8]–[12] such that only
Trondheim. the dc-component of the circulating current flows
through the arms. Then the equations (1) and (2)
2.2 Modular Multilevel Converter becomes:
The schematic of the MMC is presented in Fig. 2
[7]. The relation between the arm currents (iu,l ), the Iˆo (6)
iu,l = ± sin(ωt + ϕ) + Iz,dc
2

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The CCS control remains active in normal operation capacitor via D1 and charges it or it bypasses the
to eliminate the higher harmonics current through capacitor when the switch T2 conducts. Thus, the
the arm which causes additional losses in the capacitor in the upper arm is either only charged
semiconductor devices and passive elements in or stays at same value. A longer duration (at low
the arms. frequency or zero frequency operation) can charge
Unlike in the voltage source converters (VSCs), the capacitor to an unacceptably high value above
the load current itself flows through the submodule its rated value and the opposite will happen in the
capacitors in an MMC. Hence, the amplitude and lower arm. To avoid this continuous charging and
frequency of the output current have direct impact discharging of the capacitors, the arm current needs
on the voltage ripple in these capacitors. The an ac component superimposed with the dc current
expression for ripple in submodule capacitor voltage such that the resultant current both charges and
(ũc,u ) has been approximated in [13] as: discharges the capacitor and keeps the ripple within
the permissible limit.
Iˆo  M 2 cos ϕ Assuming the ac component as sinusoidal current
ũc,u = cos ωt − cos (ωt − ϕ)
8πfo C 2 (7) of angular frequency ωcom , and constants k1 and k2
M 
+ sin (2ωt − ϕ) as the factor by which the dc and ac components
4 should be scaled, the arm currents for phase “a”
From (7), it is quite obvious that the capacitor
can be formulated as:
voltage ripple increases as the output current (Iˆo )
increases or output frequency (fo ) decreases which Iˆo
iu,a = k1 + k2 Io sin(ωcom t)
is the case in drives application. 2 (10)
Iˆo
2.3 Low Speed Operation il,a = − k1 + k2 Io sin(ωcom t)
2
All semiconductor devices have either maximum The simple way to solve this problem could be to
conduction loss or maximum switching loss or both induce common mode sine wave current in the arms
at zero speed. The total loss in the devices decide in such a way that the arm currents in (10) become
the current limit the converter can yield. equal to (6). Assuming the induced common
Considering V /f control of the machine where the mode current has the same frequency as the rated
amplitude of the applied voltage to the motor is nominal frequency, the ac current will now circulate
decreased as the speed decreases to maintain within the arms whereas the dc current will flow out
constant (1 pu) flux in the stator of the motor, at very of the bridge legs into the windings of the motor.
low frequency or zero frequency, M is very small By flipping the position of the ac and dc part of the
(0.03 – 0.05 pu) to compensate only the drop in the currents in (6), it can be observed that the maximum
resistance (converter components, stator winding DC output current can be half of the nominal output
of the motors and others). According to (5), the dc current to keep the peak of the arm current same
component of the arm current (Iz,dc ) approaches as in the case of rated frequency operation. For
zero for very low value of M. In this case, example, with Iˆo = 100A, M = 1 and cos ϕ = 1,
the instantaneous upper arm current using (6) is
M · vdc iu = 50 sin ωt + 25 A. Now, at zero speed, when the
V̂ph,peak = (8) output current is only dc current, a similar waveform
2
to match the peak of the upper arm current at rated
Iˆo Iˆo frequency operation could be achieved by common
iu,a = and il,a = − (9) mode sinusoidal current injection as in (10) and can
2 2
be made as: iu = 25 + 50 sin ωcom t A. In the latter
The output current in all phases and all arms will be equation, 25 A is the maximum dc current from
dc current but the instantaneous sum of the three each arm and hence a total of 50 A from a bridge
phase output currents will still be zero. As shown leg that can be delivered from the converter without
in Fig. 2, if the output current is positive dc as in exceeding the current rating of the devices. Hence,
case of bridge leg “A”, the current flows through the the theoretical limit of the output torque from a half

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bridge MMC at zero frequency can be maximum 3.1.1 Conduction Loss


of 50% if the devices are designed for rated speed
The conduction loss in a semiconductor device is
operation.
calculated using (18):
A high frequency sinusoidal current injection in
2
the arm currents was first proposed in [5] and Pcon,loss = UCE0 · Iavg + RCE,on · Irms (18)
later a square wave harmonic injection method has
followed in [6]. The amplitude of the common mode From (18), the conduction loss can be calculated
current through each arm as presented in [6] is as with the knowledge of the average and rms current
follows. through a device. The derived expression for the
average and rms current through each device of a
  submodule are as follows:
∗2
1 vo,ref vdc
iz,ac,ref = − io sin ωcom t
Vcom vdc /2 2
(11) Iˆo

vo,ref io IT 1,avg = 4 − 2M 2 cos2 ϕ cos θz − M cos ϕ sin 2θz
+ − Iz,dc 16π
vdc (19)
The equation can be simplified to The average current through the switch T1 and diode
  D1 over a cycle are equal which results in keeping the
m2n −1 mn
iz,ac,ref = sin ωcom t + io − Iz,dc (12) average value of submodule capacitor voltage constant.
Mcom 2

where,
Iˆo 
Vcom IT 2,avg = 2 + M 2 cos2 ϕ cos θz
mn = M sin ωt and Mcom = (13) 8π
vdc /2 M  (20)
+ cos ϕ sin 2θz + M (π − 2θz ) cos ϕ
2
From (1) and (12):

(1 + m) m2 − 1 Iˆo 
ia,u = io + sin ωcom t (14) ID2,avg = 2 + M 2 cos2 ϕ cos θz
2 Mcom 8π
M  (21)
+ cos ϕ sin 2θz − M (π + 2θz ) cos ϕ
And, the total modulation signal excluding the 2
contribution from the CCS control becomes:
2 Io2  3 4M
m = M sin ωt + Mcom sin ωcom t (15) ID1,rms =− M cos 3ϕ cos θz − cos ϕ cos 3θz
128π 3
+ M 3M 2 − 4 cos ϕ cos θz
At low speed, as ω → 0 and M → 0, upper arm + 4 M 2 cos2 ϕ − 1 sin 2θz
current can be rewritten as: 
  + 2 (π − 2θz ) M 2 cos2 ϕ − 2
Iˆo 2
ia,u ≈ 1− sin ωcom t (16) (22)
2 Mcom
Io2  3 4M
and, IT2 2,rms = M cos 3ϕ cos θz − cos ϕ cos 3θz
128π 3
m ≈ Mcom sin ωcom t (17)
+ M 3M 2 + 28 cos ϕ cos θz
+ 4 M 2 cos2 ϕ + 1 sin 2θz
3 Analytical Loss Equations 
+ 2 (π − 2θz ) 3M 2 cos2 ϕ + 2
3.1 Rated Speed Operation (23)
3.1.2 Switching Loss
The authors have derived the expressions for
The switching loss characteristics as function of current,
calculating conduction and switching losses in each esw (i), from an experimental result can be approximated
device of a submodule. The loss expressions are as in (24).
based on the assumption that the CCS control is
enabled. esw (i) = k1T · i + k2T · i2 (24)

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where, k1T and k2T are the curve fitting coefficients


determined using the experimental results or  
manufacturer’s datasheet. The same coefficients Iˆo2 2
IT2 1,rms,dc
= 2
− 1 (π − 2θx )
for diodes are k1D and k2D . 16π Mcom
 
1
−2 − Mcom cos θx (31)
Mcom
Uc Io fsw   
PT 1sw = 4k1T (M (π + 2θz ) cos ϕ − 4 cos θz ) 1 2
32π  +2 2
− 1 sin 2θx − cos 3θx
Mcom 3Mcom
+ k2T Io (π + 2θz ) M 2 cos2 ϕ + 2

− 4 cos θz (sin θz + 2M cos ϕ)  
(25) 2 Iˆo2 2
ID1,rms,dc = 2
− 1 (π + 2θx )
16π Mcom
 
1
+2 − Mcom cos θx
Uc Io fsw 
(32)
Mcom
PT 2,sw = 4k1T (M (π − 2θz ) cos ϕ + 4 cos θz )  
32π  1 2
+ k2T Io (π − 2θz ) M 2 cos2 ϕ + 2 −2 2
− 1 sin 2θx + cos 3θx
 Mcom 3Mcom
+ 4 cos θz (sin θz + 2M cos ϕ)
(26)  
Iˆo2 2
where, IT2 2,rms,dc
= 2
+ 3 (π + 2θx )
16π Mcom
θz = sin−1 (−M cos ϕ/2) (27)  
7
+2 + Mcom cos θx (33)
Mcom
 
The diodes D1 and D2 follow the same expressions 1 2
−2 + 1 sin 2θx − cos 3θx
as that for switches T2 and T1 respectively but 2
Mcom 3Mcom
with loss coefficients k1D and k2D . These
expressions are used in later sections to calculate
the conduction and switching loss in a MMC at rated  
2 Iˆo2 2
speed operation. ID2,rms,dc = + 3 (π − 2θx )
16π 2
Mcom
 
7
3.2 Zero Speed Operation −2 + Mcom cos θx (34)
Mcom
 
In this section, the equations for average and rms 1 2
+2 2
+ 1 sin 2θx + cos 3θx
currents to calculate the conduction loss at standstill Mcom 3Mcom
condition are derived.
where,
  
Iˆo 2  
IT 1,avg,dc = − Mcom + sin θx cos θx Mcom
4π Mcom θx = sin−1 (35)
2
(28)

Iˆo  1   
IT 2,avg,dc = π + 2θx − sin 2θx Uc fsw Iˆo 8
4π  2  PT 1sw,dc = k1T (π − 2θx ) − cos θx
 (29) 8π Mcom
2 
+ + Mcom cos θx  
Mcom 2
+ k2T Io (π − 2θx ) 2
+1
Mcom
Iˆo  1 
ID2,avg,dc = π − 2θx + sin 2θx 8 2
4π  2  (30) − cos θx + 2 sin 2θx
2  Mcom Mcom
− + Mcom cos θx (36)
Mcom

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Tab. 1: Key Electrical Parameters of IGCT 5SHY


65L4521 and Diode FRD 5SDF 28L4520 at
   140◦ C [14].
Uc fsw Iˆo 8
PT 2sw,dc = k1T (π + 2θx ) + cos θx
8π Mcom
   Parameters Values
2
+ k2T Io (π + 2θx ) 2
+1 On-state Knee Voltage of IGCT (UCE0 ) 1.11 V
Mcom
 On-state Resistance of IGCT (RCE,on ) 0.297 mΩ
8 2 On-state Knee Voltage of Diode (UF 0 ) 1.10 V
+ cos θx − 2 sin 2θx
Mcom Mcom On-state Resistance of Diode (Rd ) 0.47 mΩ
(37)
Similar to the case at rated speed operation, the Tab. 2: Switching loss curve fitting coefficients of the
selected IGCT and Diode at 140◦ C.
expressions for switching loss in diodes D1 and
D2 are be same as that for switch T2 and T1
respectively. Parameters Values
k1T 4.7 × 10−3 J/A
4 Results k2T 3.17 × 10−3 J/A2
k1D 1.303 × 10−2 J/A
The loss analysis has been carried out using k2D −1.33 × 10−6 J/A2
phase shifted modulation technique such that no
additional capacitor balancing algorithm is required. fitting technique as expressed in (24) and presented
The converter discussed here is for a pumped in the Table 2.
storage power plant application where synchronous
machine is employed. The machine side converter The stack of the semiconductor devices are
in a back-to-back converter system will always be assumed to have double side cooled with 5 l/min
operated at unity power factor (cos ϕ = 1) in order to water (with 50 % Glycol) which gives parameters in
achieve the smallest possible size of the converter . the thermal circuit as shown in Table 3 [15].
Tab. 3: Thermal resistance of different section of the
The total loss in each device in a converter is
cooling circuit with double side cold plates [15].
the sum of average conduction loss and average
switching loss in that device over one fundamental
cycle as in (38). Parameters Values
Tambient 40 ◦ C
Ptot = Pcon + Psw (38) Rth,j−c 6.8 ◦ K/kW
For the analysis of the losses in the semiconductor Rth,c−h 2.2 ◦ K/kW
devices of the MMC, the IGCT 5SHY 65L4521, Rth,h−w 5.5 ◦ K/kW
2800 V, 6500 A from Hitachi ABB and the matching
diode diode FRD 5SDF 28L4520 are selected. 4.1 Rated Speed Operation
The IGBTs have higher switching loss compared
The total loss at rated frequency and unity power
to IGCTs at the same switching frequency, and
factor has been calculated for each device in a
therefore, are not favoured for this analysis. The
submodule using the expressions (19)–(27) and
key electrical parameters of the selected switch and
is presented in Fig. 3. A peak output current
diode for loss analysis are presented in Table 1.
of Iˆo = 5.5 kA leads to the total loss in each
The switching frequency (fsw ) is chosen as 250 Hz
device which leads to an steady state temperature
to have good control of the arm current and to incur
below the maximum operating temperature of the
less switching loss. The analysis is done assuming
device. The IGCT 5SHY 65L4521 positioned as
same type of switches and diodes at each position
T2 incurs the maximum loss and the switching
in the converters.
devices must be rated as per the rating of this
The switching loss coefficients of the selected IGCT device. The conduction and switching losses in the
and Diode have been calculated using the curve device T2 are 2.944 kW and 2.392 kW respectively.

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The total loss of 5.336 kW in the device with the


double side cooling arrangement as in Table 3 can
raise the junction temperature of the device up to
117◦ C which is well within the maximum operating
temperature of the device (140◦ C).

Fig. 4: Loss at zero frequency output and Iˆo =


0.35Io,ratedSpeed = 1925 A.

hence to meet the DC link voltage of 25 kV, 10


submodules are required. The total number of
submodules will be 60 in the machine side converter
Fig. 3: Loss at rated frequency output and Iˆo = 5500 A. alone.

4.2 Zero Speed Operation The total loss in one submodule at rated speed
operation is 11.5 kW (using Fig.3). The loss
Similar loss analysis as in case of rated speed in the semiconductor devices of the converter
operation has been carried out for zero speed would then be 690 kW which gives an efficiency
operation. As discussed earlier, the modulation higher than 99% excluding the losses in the
index of the sinusoidal common mode injection passive components (submodule capacitors and
signal has been chosen as Mcom = 0.5 because arm inductors), gate driver circuits and cooling
the study in [6] shows that similar value gives a system.
submodule voltage ripple of less than 20% in the
low and zero speed region. The total loss in each 5 Conclusion
device in a submodule has been calculated using The loss analysis based on analytical loss
(28) –(37). The iterative loss calculation with various equations presented in this paper shows that
dc output current from the bridge leg shows that the modular multilevel converters of 100 MVA, 13–15
loss with 35% of peak current at rated operation (Iˆo ) kV range can be achieved with the submodules
yields the same loss as in case of rated speed of available IGCTs and diodes with single devices
operation. The loss at Iˆo = 0.35Io,ratedSpeed = at each position. The start up torque of 12%
0.35 · 5500A = 1925 A is presented in Fig. 4. with submerged turbine is also achievable without
overheating the devices as the MMC can yield up
4.3 Proposed Converter Configuration to 35% of full load current at zero speed. The study
also shows that the transition with full flow requires
The application requirement of 100 M V A at 13 −
around 120% of rated torque at reduced speed
15 kV leads to a need of 4.44 − 3.85 kA of rms
and therefore, the fast transition from generating
current output, i.e. Iˆo = 6.28 − 5.44 kA. As the
to pumping mode can be realized only at partial
analysis at rated speed operation shows, a peak
opening of the guide vanes.
current of Iˆo = 5.5kA i.e. Irms = 3.89kA can be
achieved using the selected IGCTs. Hence, a power
rating of 87 – 100 MVA can be managed depending Acknowledgment
upon the stator voltage rating of the synchronous The authors would like to thank HydroCen
machine in a pumped storage plant. The voltage (https://www.ntnu.edu/hydrocen) for supporting this
rating of the selected IGCT device is 2.8 kV and work.

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