ECE 4300: Electronic Circuits I

Module 2: Diodes

Adapted from the notes of

Drs. John Quaicoe and Thumeera Wanasinghe

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 Module 2.1 Basics of
Semiconductors (Recalling
PHYS3000)

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Semiconductors
• Semiconductors are materials whose conductivity lies between
that of conductors (e.g., copper) and insulators (e.g., glass).
• There are two types of semiconductors:

• Doped semiconductors are further divided into two more

categories

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Intrinsic Semiconductors

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Intrinsic Semiconductors

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Intrinsic Semiconductors

Figure 3.1 Two-dimensional representation of the silicon Figure 3.2 At room temperature, some of the covalent bonds
crystal. The circles represent the inner core of silicon are broken by thermal generation. Each broken bond gives
atoms, with +4 indicating its positive charge of +4q, rise to a free electron and a hole, both of which become
which is neutralized by the charge of the four valence available for current conduction.
electrons. Observe how the covalent bonds are formed by
sharing of the valence electrons. At 0 K, all bonds are
intact and no free electrons are available for current
conduction.

Copyright © 2015 by Oxford University Press, Sendra/Smith, Microelectronic Circuits, Seventh Edition

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Doped Semiconductors : n‐type

Figure 3.1 Two-dimensional representation of the silicon Figure 3.3 A silicon crystal doped by a pentavalent element.
crystal. The circles represent the inner core of silicon Each dopant atom donates a free electron and is thus called
atoms, with +4 indicating its positive charge of +4q, a donor. The doped semiconductor becomes n type.
which is neutralized by the charge of the four valence
electrons. Observe how the covalent bonds are formed by
sharing of the valence electrons. At 0 K, all bonds are
intact and no free electrons are available for current
conduction.

Copyright © 2015 by Oxford University Press, Sendra/Smith, Microelectronic Circuits, Seventh Edition

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Doped Semiconductors : p‐type

Figure 3.1 Two-dimensional representation of the silicon Figure 3.4 A silicon crystal doped with boron, a trivalent
crystal. The circles represent the inner core of silicon impurity. Each dopant atom gives rise to a hole, and the
atoms, with +4 indicating its positive charge of +4q, semiconductor becomes p type.
which is neutralized by the charge of the four valence
electrons. Observe how the covalent bonds are formed by
sharing of the valence electrons. At 0 K, all bonds are
intact and no free electrons are available for current
conduction.

Copyright © 2015 by Oxford University Press, Sendra/Smith, Microelectronic Circuits, Seventh Edition

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Current Flow in Semiconductor
• There are two distinctly different mechanisms for the
movement of charge carries.
• Thus two different currents :
• Drift current: charge carrier is driven by an _______________
• Diffusion current: due to _____________________, the
diffusion of charge carriers gives rise to a net flow of charge

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pn‐Junction
• Structure of PN‐Junction

• Depletion Region (___________________________)

IS: drift current, ID: diffusion current

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pn‐Junction

Figure 3.11 The pn junction in: (a) equilibrium; (b) reverse bias; (c) forward bias.

Copyright © 2015 by Oxford University Press, Sendra/Smith, Microelectronic Circuits, Seventh Edition

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Reverse Breakdown
• The I–V characteristic of the pn‐Junction
• There are two possible mechanisms for
pn‐junction breakdown
(1) ____________________
(2) ____________________

• Zener Breakdown is not a ______________ phenomenon

‐ If a pn junction breaks down with a breakdown voltage VZ <
__V, the breakdown mechanism is usually the zener effect.
‐ Avalanche breakdown occurs when VZ is greater than
approximately __ V.
‐ For junctions that break down between __ V and __ V, the
breakdown mechanism can be either the zener or the
avalanche effect or a combination of the two.
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